Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]
Micromachines (Basel)Lee CT, Lee HY.
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Self-Calibrating TSEP for Junction Temperature and RUL Prediction in GaN HEMTs. [PDF]
Nanomaterials (Basel)Cui Y +6 more
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Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion. [PDF]
Micromachines (Basel)Zhai L +13 more
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Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications. [PDF]
Micromachines (Basel)Liu W, Wang K.
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Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]
Sensors (Basel)Górecki K, Posobkiewicz K.
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On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs. [PDF]
Micromachines (Basel)Giorgino G +13 more
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Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Materials (Basel)Weis M.
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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the core Ecole Polytechnique Federale de Lausanne (EPFL) HEMT model, the temperature dependence of ...
Nika Sahebghalam +3 more
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