Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications. [PDF]
Alim MA, Gaquiere C.
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Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Pu T, Li X, Li L, Ao JP.
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Structure-Dependent Parameter Trade-Off Optimization on <i>R</i><sub>on</sub><i>C</i><sub>off</sub> and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. [PDF]
Zou X +11 more
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Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]
Shi Y +13 more
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Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]
Wu TL +5 more
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4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]
Chen C +7 more
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Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Kim DW +10 more
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Machine learning- assisted remaining useful lifetime prediction of power electronic converters. [PDF]
Sayed H, Krishnamoorthy HS.
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Dietary recommendations for people with cystic fibrosis, a relevantly changing field. [PDF]
Mainz JG, Zagoya C.
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Decoupled Multiplicative Physics-Guided Neural Network for Extrapolative Modeling of GaN HEMT. [PDF]
Tang Y +5 more
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