Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
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Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]
Sensors (Basel)Górecki K, Posobkiewicz K.
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Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications. [PDF]
Micromachines (Basel)Liu W, Wang K.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Materials (Basel)Weis M.
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On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs. [PDF]
Micromachines (Basel)Giorgino G +13 more
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Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]
Micromachines (Basel)Lu H +8 more
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Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers. [PDF]
Nanomaterials (Basel)Wang P +9 more
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Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer. [PDF]
Micromachines (Basel)Sun S, Liu L, Qu G, Xie X, Ajayan J.
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Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Micromachines (Basel)Li Y, Huang Y, Li J, Sun H, Guo Z.
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