Results 131 to 140 of about 15,181 (229)

Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]

open access: yesNat Commun
Shi Y   +13 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

open access: yesACS Appl Electron Mater
Kim DW   +10 more
europepmc   +1 more source

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