Results 91 to 100 of about 15,181 (229)

Glucagon‐Like Peptide‐1 Receptor Agonist Use Is Associated With Improved Lung Function in Cystic Fibrosis‐Related Diabetes

Diabetes, Obesity and Metabolism, Volume 28, Issue 12, Page 11986-11989, December 2026.
Luke A. Ephraums, Edward R. Mignone, Kylie Lange, Ashlee Routley, Judith Morton, Emily Hopkins, Sally Chapman, Lucia Gagliardi, Michael Horowitz, Mahesh M. Umapathysivam   +9 more
wiley   +1 more source

ScAlN-based HEMTs: Challenges and opportunities [PDF]

APL Electronic Devices
The rapid advancement of wireless communication, radar technology, automotive electronics, and renewable energy systems necessitates semiconductor devices capable of operating at increasingly higher frequencies and power densities while maintaining ...
Zetian Mi, Md Tanvir Hasan
doaj   +1 more source

Über nichtlinearen Elektronentransport und Leistungsvermögen von HEMTs

, 2022
S.210-217We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT.
Hess, K., Quay, Rüdiger, Reuter, R., Schlechtweg, M., Palankovski, V., Grave, T., Selberherr, S.   +6 more
core   +1 more source

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

, 2001
The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the ...
Cao X, Zeng YP, Kong MY, Pan LA, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Zhu ZP, Wang BQ, Wang XG, Chang Y, Chu JH   +9 more
core  

High-speed and low-noise AlInN/GaN HEMTs on SiC

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate ...
Benedickter, Hansruedi, Grandjean, Nicolas, Feltin, Eric, Bolognesi, C. R., Sun, Haifeng, Gonschorek, Marcus, Alt, Andreas R., Carlin, Jean-Francois   +7 more
core   +1 more source

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions [PDF]

, 2019
This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs).
Uemura, Keisuke, Komatsu, Yuto, Toguchi, Masachika, Sato, Taketomo, Keisuke Uemura, Yuto Komatsu, Taketomo Sato, Masachika Toguchi   +7 more
core   +1 more source

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

, 2023
GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance.
Chuang-Ju Lin, Hsuan-Cheng Pai, Guo-Wei Huang, Kun-Ming Chen, Edward-Yi Chang, Chia-Wei Chuang   +5 more
core   +1 more source

High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

, 2013
In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology.
Zhou, Qi, Chen, Wanjun, Liu, Shenghou, Zhang, Bo, Chen, Kevin J., Feng, Zhihong, Cai, Shujun   +6 more
core   +1 more source

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs [PDF]

, 2011
The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier
Di Forte Poisson, M-A., Morvan, E., Tadjer, Marko Jak, Dua, C., Martin Horcajo, Sara, Sarazin, N., Cuerdo Bragado, Roberto, Calle Gómez, Fernando   +7 more
core  

Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress [PDF]

The GaN-based high-electron mobility transistors (HEMTs) can operate efficiently in reverse conduction mode without requiring an intrinsic antiparallel diode, reducing power losses and enabling higher switching frequencies.
Tallarico A. N., Smerzi S. A., Iucolano F., Bevilacqua S., Fiegna C., Cioni M., Millesimo M., Russo A.   +7 more
core   +1 more source