Results 91 to 100 of about 9,883 (230)

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

, 2001
The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the ...
Cao X, Zeng YP, Kong MY, Pan LA, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Zhu ZP, Wang BQ, Wang XG, Chang Y, Chu JH   +9 more
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Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm

APL Materials
This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth.
Kohei Ueno, Ryota Maeda, Takao Kozaka, Hiroshi Fujioka   +3 more
doaj   +1 more source

An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs

IEEE Journal of the Electron Devices Society
High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of
Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja   +5 more
doaj   +1 more source

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

IEEE Journal of the Electron Devices Society, 2019
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation.
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton   +9 more
doaj   +1 more source

Research progress on irradiation effect of InP-based high electron mobility transistors

He jishu
Indium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng, ZHOU Shuxing, CAO Wenyu, WEI Yanfeng, WANG Jingyang, LI Shusen, YAN Jiasheng, LIANG Guijie   +7 more
doaj   +1 more source

Low density drain HEMTs

, 2011
Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field ...
Lau, Kei May, Chen, Kevin J.
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An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

, 2009
Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in.
Zhang ML, Hou QF, Chen TS, Jiang LJ, Wang ZG, Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn, Feng C, Wang XL, Tang J, Wei M, Ran JX, Li JM, Xiao HL   +12 more
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High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P, Zhang, T, Wang, L, Han, J, Chen, S, Luo, X, Dai, J, Qi, K, Xu, X, Linewih, H, Lin, Z   +10 more
core   +1 more source

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs [PDF]

, 2011
The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier
Di Forte Poisson, M-A., Morvan, E., Tadjer, Marko Jak, Dua, C., Martin Horcajo, Sara, Sarazin, N., Cuerdo Bragado, Roberto, Calle Gómez, Fernando   +7 more
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III-V CMOS: What have we learned from HEMTs? [PDF]

, 2011
The ability of Si CMOS to continue to scale down transistor size while delivering enhanced logic performance has recently come into question. An end to Moore's Law threatens to bring to a halt the microelectronics revolution: a historical 50 year run of ...
Antoniadis, Dimitri A., Kim, Tae-Woo, Jin, Donghyun, del Alamo, Jesus A., Kim, Dae-Hyun   +4 more
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