Results 71 to 80 of about 9,883 (230)

Impact of COVID‐19 and CFTR Modulators on Cystic Fibrosis: A Real‐World Analysis of Care Patterns

Pediatric Pulmonology, Volume 61, Issue 4, April 2026.
ABSTRACT Introduction Novel therapeutics and rapid expansion of telehealth have reshaped cystic fibrosis (CF) care; however, the impact on visit patterns and equitable access across the CF population remains unclear. We characterized changes in visit patterns from 2017 to 2022 and the association of sociodemographic and clinical factors with visit ...
Alexandra C. Hinton, Edmund H. Sears Jr., Sara Lopez‐Pintado, Jonathan B. Zuckerman   +3 more
wiley   +1 more source

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process [PDF]

, 2011
International audienceA study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper.
Guillaume Callet, Di Forte Poisson, M.A., Delage, S.L., Raphaël Aubry, Chartier, E., Stéphane Piotrowicz, Mourad Oualli, Jérémy Dufraisse, Jacquet, J.C., Aubry, R., Sylvain L. Delage, Piotrowicz, S., Eric Chartier, Olivier Jardel, Jardel, Olivier, Callet, Guillaume, Morvan, E., Jean-Claude Jacquet, Michele Piazza, Oualli, M., Reveyrand, Tibault, Nicolas Sarazin, Tibault Reveyrand, Piazza, Michele, Marie-Antoinette Di Forte Poisson, Dufraisse, Jérémy, Erwan Morvan, Sarazin, N.   +27 more
core   +1 more source

Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers

CES Transactions on Electrical Machines and Systems, 2017
Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian, Xi Zhang, Yongsheng Fu, Juncheng Lu, Hua Bai   +4 more
doaj   +1 more source

Severe Hypoxia Reduces Adenylyl Cyclase 6 Expression and Function in Bronchial Epithelial Cells

FASEB BioAdvances, Volume 8, Issue 4, April 2026.
Adenylyl cyclase 6 (AC6) plays an important role in the generation of cyclic adenosine monophosphate (cAMP) in the lungs. In cystic fibrosis, excessive mucus production and reduced mucociliary clearance create regions of severe hypoxia that can affect cell functions.
Ryan H. Cunnington, Nisha Singh, Marziyeh Shafizadeh, John W. Hanrahan, Shyamala Dakshinamurti, Prashen Chelikani   +5 more
wiley   +1 more source

Pulsed operation and performance of commercial GaN HEMTs

, 2009
The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100–400 kHz are presented.
Morris, KA, Beach, MA, Fornetti, F
core  

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

IEEE Journal of the Electron Devices Society, 2017
An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under ...
Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang   +8 more
doaj   +1 more source

Influence of Displacement Damage Effect on AlGaN/GaN HEMT Devices

Yuanzineng kexue jishu, 2023
AlGaN/GaN high electron mobility transistors (HEMTs) have excellent physical and chemical stability, which gives it great potential for use in consumer, industrial and space applications.
CHEN Baiwei1,2;SUN Changhao1,2;MA Teng2;SONG Hongjia1;WANG Jinbin1;PENG Chao2;ZHANG Zhangang2;LEI Zhifeng2;LIANG Chaohui2,*;ZHONG Xiangli1,*
doaj   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs

, 2022
S.150-153The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated and compared. A small signal model for InGaAs- metamorphic HEMTs and InGaAs MOSFETs, including an accurate description of the RF-noise, is ...
Leuther, Arnulf, Schwantuschke, Dirk, Ohlrogge, Matthias, Quay, Rüdiger, Ambacher, Oliver, Tessmann, Axel, Heinz, Felix   +6 more
core   +1 more source