Results 71 to 80 of about 17,841 (221)
Environmental DNA, Volume 8, Issue 2, March/April 2026.Goldfish eDNA samples were collected from urban stormwater ponds spanning a wide abundance gradient and paired with conventional sampling and whole‐pond draining to estimate population size. eDNA concentration estimates were highly replicable between independent laboratories (mean pond eDNA concentration R2 = 0.99), and both detection probability and ...
Ian S. Smith +11 more
wiley +1 more source
Pediatric Pulmonology, Volume 61, Issue 3, March 2026.ABSTRACT Background The metabolic impact of poor diet quality in cystic fibrosis (CF), coupled with a rise in obesity and modulator‐induced weight gain, is a growing concern. Our study aimed to understand knowledge and perspectives regarding dietary changes on modulators, and how measured nutrient intake changes with different dietary patterns in ...
Julianna Bailey +5 more
wiley +1 more source
AIP Advances, 2022 We report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 µm) GaN buffer on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high performance for both radio-frequency (RF) amplification and power conversion.
Wenjie Song +6 more
doaj +1 more source
Tunable Josephson Generator for Qubit Excitation and Two‐Tone Spectroscopy
Advanced Quantum Technologies, Volume 9, Issue 3, March 2026.A tunable on‐chip Josephson generator that enables direct qubit excitation has been presented. The device consists of a current‐biased Josephson junction and a superconducting resonator, forming a microwave source that operates at 4 K. Excitation of the qubit at 20 mK was done via a short coaxial line between the 4 K and 20 mK stages.
M. M. Khrenov +17 more
wiley +1 more source
Estimation of background carrier concentration in fully depleted GaN films
, 2015 Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers.
Bhat, Navakanta +3 more
core +1 more source
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications [PDF]
, 2005 The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
Elgaid, K. +4 more
core +1 more source
Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu +10 more
wiley +1 more source
Dipole scattering in polarization induced two-dimensional electron gases
, 2000 Unusually large spontaneous and piezoelectric fields in the III-V nitrides have led to the making of an entirely new class of two-dimensional electron gas.
Gossard, Arthur. C. +2 more
core +1 more source
Advanced Science, Volume 13, Issue 7, 3 February 2026.This work presents highly consistent GaN‐based thin‐film gas sensors prepared by MOCVD for non‐invasive breath analysis. The sensors exhibit tunable selectivity from oxidizing to reducing gases by incorporating In composition, ultra‐low detection limits and humidity resistance.
Yuxuan Wang +9 more
wiley +1 more source
Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers
CES Transactions on Electrical Machines and Systems, 2017 Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than ...
Wei Qian +4 more
doaj +1 more source