Results 71 to 80 of about 1,513 (185)

Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor

Applied Physics Express
We investigated the impact of In within barriers on the gate leakage current in InAlGaN/GaN high-electron-mobility transistors (HEMTs). The results revealed that the gate leakage current in the (In)AlGaN barriers depends solely on the two-dimensional ...
Atsushi Yamada, Toshihiro Ohki
doaj   +1 more source

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

IET Power Electronics
The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration.
Peng Xue, Eckart Hoene, Pooya Davari
doaj   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source

Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs. [PDF]

Micromachines (Basel)
Mosbahi H, Ali MKM, Gassoumi M.
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Structure-Dependent Parameter Trade-Off Optimization on <i>R</i>_on<i>C</i>_off and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. [PDF]

Micromachines (Basel)
Zou X, Zhang M, Yang L, Hou B, Wu M, Yi C, Lu H, Jia M, Yu Q, Jiang Y, Ma X, Hao Y.   +11 more
europepmc   +1 more source

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source