Results 71 to 80 of about 15,181 (229)

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, Volume 38, Issue 62, 6 November 2026.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation

, 2011
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and characterized. A variety of techniques were used to improve device performance, such as AlN interlayer, silicon nitride passivation, high aspect ratio T-shaped ...
Renping Zhang, Zhang, Renping, Yang, Fuhua, Yan, Wei, Zhang, R.(zhangrenping@semi.ac.cn), Xiaoliang Wang, Fuhua Yang, Wei Yan, Wang, Xiaoliang   +8 more
core   +1 more source

Vacancy‐Type Defects in N‐Implanted GaN and Their Impact on Mg Diffusion Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 11, November 2026.
Vertical GaN devices have been extensively studied, and Mg implantation with sequential N implantation has been reported as an ideal technique for fabricating p‐type regions in these devices. We used positron annihilation to study vacancy behavior during ultrahigh‐pressure annealing. It was found that the imbalanced formation of Ga‐ and N‐vacancies and
Akira Uedono, Moriyuki Kanno, Shigefusa F. Chichibu, Shoji Ishibashi, Tetsu Kachi, Jun Suda   +5 more
wiley   +1 more source

RF performance of trigate GaN HEMTs

, 2022
S.4255-4261The impact of the trigate GaN high electron mobility transistor (HEMT) body geometry on the device RF performance is investigated by 3-D numerical simulations.
Granzner, R., Alsharef, M., Quay, Rüdiger, Ambacher, Oliver, Schwierz, F., Ture, Erdin, Christiansen, M.   +6 more
core   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, Volume 38, Issue 60, 27 October 2026.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Stabilization network optimization of internally matched GaN HEMTs

, 2011
PurposeThe purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs).Design/methodology/approachThe effects of the two stabilization networks on the characteristics ...
W.J. Luo, Y.K. Zheng, C.Y. Yang, K. Wei, X.Y. Liu, X.J. Chen   +5 more
core   +1 more source

Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

, 2022
International audienceThe microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C.
Rezazadeh, Ali A, Gaquière, Christophe, Alim, Mohammad Abdul   +2 more
core   +1 more source

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

IEEE Journal of the Electron Devices Society, 2017
An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under ...
Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang   +8 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, Volume 13, Issue 20, 21 October 2026.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

FABRICATION AND CHARACTERIZATION OF SUBMICRON FABRICATION AND CHARACTERIZATION OF SUBMICRON AlGaN/GaN HEMTS

, 2020
Using our in-house 0.3 µm mushroom gate process, AlGaN/GaN high electron mobility transistors (HEMTs) with total gate periphery up to 0.6 mm were fabricated and characterized. The transistors were processed on an AlGaN/GaN heterostructure grown by MBE on
Joakim Eriksson, Hemts V Desmaris, J Eriksson, Niklas Rorsman, Vincent Desmaris, Herbert Zirath, H Zirath, Algan / Gan, N Rorsman   +8 more
core