Results 41 to 50 of about 1,513 (185)

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Polymicrobial Extracellular Vesicles Reduce the Innate Immune Response of Human Cystic Fibrosis Bronchial Epithelial Cells

Journal of Extracellular Biology, Volume 5, Issue 8, August 2026.
ABSTRACT Chronic antibiotic‐resistant cystic fibrosis (CF) lung infections are the leading cause of death in adults with CF. Despite advances in highly effective modulator therapies, microbial communities persist in the CF lung. The pathogenesis of CF airway infections can be exacerbated by pathogens such as Pseudomonas aeruginosa, which communicates ...
Lily A. Charpentier, Roxanna L. Barnaby, Carolyn T. Roche, Byoung‐Kyu Cho, Prashant Kaushal, Young Ah Goo, Brad Vietje, Douglas J. Taatjes, Alix Ashare, Fabrice Jean‐Pierre, Bruce A. Stanton   +10 more
wiley   +1 more source

Experimental, Genomic, and Structural Evidence Supporting Putative PET‐Hydrolases in Thermophilic Bacteria Isolated From Hot Springs in Cajamarca, Peru

MicrobiologyOpen, Volume 15, Issue 4, August 2026.
Integrated microbiological, genomic, and structural analyses of bacteria isolated from a Peruvian geothermal system reveal enzymatic potential for the transformation of polyesters such as PET. This study links experimental evidence with genomic determinants and in silico analyses that support the thermophilic bacteria biodegradation capacity.
Marco A. Rivera‐Jacinto, Claudia Rodríguez‐Ulloa, Sara R. Briones‐Ramírez, Betsy Quispe‐Cruz, Sandra Carrasco‐Tarrillo, Diego A. Leonardo, Juan P. Cardenas   +6 more
wiley   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

Meaningful Criteria to Persons Living With Cystic Fibrosis and Their Healthcare Providers in Helping Determine Adjustments to Routine Clinical Follow‐Up

Pediatric Pulmonology, Volume 61, Issue 7, July 2026.
ABSTRACT Introduction Persons living with cystic fibrosis (PwCF) have experienced fewer exacerbations and symptom burden over the last decade, largely thanks to widespread uptake of highly effective modulator therapy (HEMT). With these advancements, there have been interest in the community regarding adjustments to the care model.
William R. Hunt, Christian Merlo, Ashley Keller, Karen Lowe, Kristin Riekert, James D. Finklea   +5 more
wiley   +1 more source

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

AIP Advances, 2022
We report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 µm) GaN buffer on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high performance for both radio-frequency (RF) amplification and power conversion.
Wenjie Song, Jie Zhang, Zheyang Zheng, Sirui Feng, Xuelin Yang, Bo Shen, Kevin J. Chen   +6 more
doaj   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

IEEE Access, 2019
Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
doaj   +1 more source