Results 41 to 50 of about 15,181 (229)

Pulsed operation and performance of commercial GaN HEMTs [PDF]

, 2009
The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100–400 kHz are presented.
Morris, KA, Beach, MA, Fornetti, F
core  

Enhancement‐mode AlGaN/GaN HEMTs on silicon substrate

, 2006
High performance enhancement-mode AlGaN/GaN HEMTs (E-HEMTs) were demonstrated with samples grown on low-cost silicon substrate for the first time. The fabrication process is based on fluoride-based plasma treatment of the gate region and post-gate ...
Wang, Deliang, Deliang Wang, Lau, Kei May, Kevin J. Chen, Cai, Yong, Yong Cai, Chen, Kevin J., Baoshun Zhang, Jia, Shuo, Kei May Lau, Shuo Jia, Zhang, Baoshun   +11 more
core   +1 more source

Customized Itinerant Frequency Combs by Cascaded Nonlinear Effects

Advanced Science, EarlyView.
A cascaded third‐order nonlinear system generates an itinerant frequency comb with the comb center frequency decoupled from the cavity resonance. This enables arbitrary spectral scaling, flexible spacing adjustments, and real‐time central‐frequency engineering, allowing comb splicing and subdivision. The resulting versatility and reconfigurability open
Yi Wang, Yulong Liu, Zeji Li, Wenyan Wang, Sihan Wang, Cheng Wang, Jingwei Zhou, Jie‐Qiao Liao, Tiefu Li   +8 more
wiley   +1 more source

State of the art on gate insulation and surface passivation for GaN-based power HEMTs [PDF]

, 2018
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics.
Nishiguchi, Kenya, Zenji Yatabe, Hashizume, Tamotsu, Kuzmik, Jan, Yatabe, Zenji, Tamotsu Hashizume, Kenya Nishiguchi, Kaneki, Shota, Shota Kaneki, Jan Kuzmik   +9 more
core   +1 more source

Aussagkräftige Simulationen von AlGaN/GaN HEMTS

, 2022
S.131-134For the development of next-generation AlgaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required.
Vitanov, S., Quay, Rüdiger, Palankovski, V., Murad, S., Rödle, T., Selberherr, S.   +5 more
core   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Zuverlässigkeit und Degradationsmechanismen von AlGaAs/InGaAs und InAlAs/InGaAs HEMTs

, 2022
S.81-86The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported.
Feltgen, T., Leuther, Arnulf, Benkhelifa, Fouad, Dammann, Michael, Jantz, W.   +4 more
core   +1 more source

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source