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Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Shiyin Zhang +3 more
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Study of TaN-Gated p-GaN E-Mode HEMT
IEEE Transactions on Electron Devices, 2023Rijo Baby +5 more
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Simulation model for a GaN-HEMT with Schottky p-GaN-Gate
2021Neuartige Leistungstransistoren mit weitem Bandabstand aus den Materialien Siliziumkarbid (SiC) und Galliumnitrid (GaN) bieten im Vergleich zu Silizium-Schaltern die Möglichkeit, Systeme mit gesteigerten Schaltfrequenzen zu realisieren. Aufgrund der auftretenden schnellen Schalt- und Stromanstiegsgeschwindigkeiten steigt der Einfluss der parasitären ...
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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-Gate and 156 GHz f_(T)
IEEE Electron Device Letters, 2021Joel Wong, Patrick Fay, Jeong-Sun Moon
exaly
Gate Reliability of enhanced-mode p-GaN HEMTs
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.openaire +1 more source
Unidirectional p-GaN gate HEMT with composite source-drain field plates
Science China Information Sciences, 2022Haiyong Wang +10 more
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Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications
2023 IEEE 15th International Conference on ASIC (ASICON), 2023Junting Chen +3 more
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Doping Engineering of p-GaN Gate HEMTs on Si
2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)Jun-Zhe Wang +5 more
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Gate Circuit improves p-GaN HEMT VTH reliability
2023Liu, Xinke, Chen, Zengfa, Zhong, Ze
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Heteroepitaxy of Hf0.5Zr0.5O2 Ferroelectric Gate Layer on AlGaN/GaN Towards Normally-Off HEMTs
Applied Surface Science, 2022Xinke Liu, Xiaomin Li, Anran Gao
exaly