Results 171 to 180 of about 4,002 (212)

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua, Chengcai Wang, Junting Chen, Li Zhang, Zheyang Zheng, Kevin J. Chen   +5 more
openaire   +1 more source

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

IEEE Transactions on Device and Materials Reliability, 2021
We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The threshold voltage is monitored from $10~\mathrm {\mu }\text{s}$ up to 100 s under positive gate bias stress and during recovery.
Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens, Benoit Bakeroot   +5 more
openaire   +2 more sources

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

IEEE Electron Device Letters, 2013
A pathway to increase the threshold voltage $(V_{\rm TH})$ of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of $V_{\rm TH}$ in p-GaN gate HEMTs.
Injun Hwang, Jaejoon Oh, Hyuk Soon Choi, Jongseob Kim, Hyoji Choi, Joonyong Kim, Soogine Chong, Jaikwang Shin, U-In Chung   +8 more
openaire   +1 more source

A Novel Digital Etch Technique for p-GaN Gate HEMT

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018
We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm.
Yuan Lin, Yueh Chin Lin, Franky Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, Edward Yi Chang   +5 more
openaire   +1 more source

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

IEEE Electron Device Letters, 2018
The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
openaire   +2 more sources

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesus A. del Alamo   +3 more
openaire   +1 more source

Study of TaN-Gated p-GaN E-Mode HEMT

IEEE Transactions on Electron Devices, 2023
Rijo Baby, K. Reshma, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath   +5 more
openaire   +1 more source

Gate Circuit improves p-GaN HEMT VTH reliability

2023
Liu, Xinke, Chen, Zengfa, Zhong, Ze
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang   +5 more
openaire   +1 more source