Results 151 to 160 of about 29,855,390 (205)

Self-Calibrating TSEP for Junction Temperature and RUL Prediction in GaN HEMTs. [PDF]

Nanomaterials (Basel)
Cui Y, Gan Y, Wen K, Jiang Y, Chen C, Wang Q, Yu H.   +6 more
europepmc   +1 more source

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

Micromachines (Basel)
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, Chang Q, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs

Microelectronic Engineering
S. Milazzo, G. Greco, G. Giorgino, C. Miccoli, S. Mirabella, F. Iucolano, F. Roccaforte   +6 more
openaire   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry. [PDF]

Sci Adv
Yu J, Li T, Lao Y, Yang J, Cui J, Liu S, Yang H, Yin Y, Wang M, Yang X, Chen KJ, Shen B, Wei J.   +12 more
europepmc   +1 more source

A robust GaN p-FET with unconventional electron conduction. [PDF]

Commun Eng
Kumar M, Xu L, Labau T, Biscarrat J, Torrengo S, Lecouvey C, Charles M, Elias C, Olivier A, Petitjean EC, Saghi Z, Zgheib J, Escoffier R, Buckley J.   +13 more
europepmc   +1 more source

Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]

Micromachines (Basel)
Lu H, Hao X, Zhang Y, Yang L, Hou B, Zhang M, Wu M, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]

Micromachines (Basel)
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc   +1 more source

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs [PDF]

IEEE Electron Device Letters, 2022
In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate.
Stefaan Decoutere, Enrico Sangiorgi, Maurizio Millesimo   +2 more
exaly   +5 more sources

High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

IEEE Electron Device Letters
In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Zhaojun Lin, Peng Cui, Siheng Chen
exaly   +2 more sources