Results 151 to 160 of about 4,002 (212)

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]

Front Optoelectron
Xing R, Guo H, Guo B, Yu G, Zhang P, Zhou J, Yang A, Li Y, Hao C, Yue H, Zeng Z, Zhang X, Zhang B.   +12 more
europepmc   +1 more source

Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication. [PDF]

Micromachines (Basel)
Yin Y, Fan Q, Ni X, Guo C, Gu X.
europepmc   +1 more source

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]

Nanomaterials (Basel)
Wang H, Liu Y, Dong X, Ullah A, Sun J, Zhang C, Xiong Y, Gu P, Chen G, Liu X.   +9 more
europepmc   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source

Dipolar modulation of surface states in GaN via molecular ionization energy. [PDF]

Sci Rep
Chaulker OH, Turkulets Y, Shapira Y, Goldman RS, Shalish I.   +4 more
europepmc   +1 more source

Design and Application of p-AlGaN Short Period Superlattice. [PDF]

Micromachines (Basel)
Liu Y, Chen C, Zhou X, Li P, Yang B, Zhang Y, Bai J.   +6 more
europepmc   +1 more source

Impact of Channel Effects on Radiation-Hardened InAlGaN HEMTs for Low-Earth-Orbit Applications. [PDF]

ACS Omega
Lee SK, Weng YC, Huang CY, Chang EY, Tseng YC.   +4 more
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit. [PDF]

Sci Rep
Faizan M, Qian Z, Zhu H, Fan S, Yousaf MZ, Bajaj M, Zhichu C, Aziz A.   +7 more
europepmc   +1 more source