Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Materials (Basel)Pu T, Li X, Li L, Ao JP.
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Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]
Discov NanoZhao H +6 more
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High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN<sub>x</sub> Layer Etching Technique. [PDF]
Micromachines (Basel)Cao X +13 more
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Device engineering for stable and reliable gate operation in Schottky-type p-GaN gate HEMTs
Schottky-type p-GaN gate high electron mobility transistors (HEMTs) are commercially promising power devices due to their balance of performance and fabrication cost.
Chen, Junting
core
Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]
Nat CommunShi Y +13 more
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Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications. [PDF]
Micromachines (Basel)Belguith M +4 more
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Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]
Materials (Basel)Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
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Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
ACS OmegaQureshi B, Alharbi AG, Ayub R, Loan SA.
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The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]
Micromachines (Basel)Shi Y +5 more
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Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Micromachines (Basel)Won YH +6 more
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