Results 131 to 140 of about 4,002 (212)

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]

Micromachines (Basel)
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc   +1 more source

Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]

Micromachines (Basel)
Wang Y, Wang J, Dong Z, Tian P, Liu Y, Zhai J, Hu W.   +6 more
europepmc   +1 more source

Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]

Micromachines (Basel)
Lee CT, Lee HY.
europepmc   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

Micromachines (Basel)
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, Chang Q, Ma X, Hao Y.   +12 more
europepmc   +1 more source