Results 1 to 10 of about 3,980 (157)

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate. [PDF]

Micromachines (Basel), 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Han Z, Li X, Wang H, Yuan J, Wang J, Wang M, Yang W, You S, Chang J, Zhang J, Hao Y.   +10 more
europepmc   +2 more sources

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN gate
Chae M, Kim H.
europepmc   +2 more sources

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, Hao Y.   +10 more
europepmc   +2 more sources

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2021
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Wang J, Chen Z, You S, Bakeroot B, Liu J, Decoutere S.   +5 more
europepmc   +6 more sources

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]

IEEE Transactions on Electron Devices, 2021
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Guangrui Xia, Qing Wang, Hongyu Yu
exaly   +3 more sources

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. [PDF]

Nanomaterials (Basel), 2023
A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication.
Wang L, Zhang P, Zhu K, Wang Q, Pan M, Sun X, Huang Z, Chen K, Yang Y, Xie X, Huang H, Hu X, Xu S, Wu C, Wang C, Xu M, Zhang DW.   +16 more
europepmc   +2 more sources

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study Between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Michele Riccio, Alessandro Borghese, Giovanni Breglio   +2 more
exaly   +3 more sources

<i>V</i>_TH-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. [PDF]

Micromachines (Basel)
In this work, a novel Schottky-gated p-channel GaN field-effect transistor (PFET) with a tunable n-GaN sub-gate layer is investigated. Terminal-current analysis under the actual drain-bias condition shows that the gate-current contribution remains ...
Liu Y, Zhang T, Su H, Chen J, Li X, Xu S, Ren Z, Zhu W, Du Y, Hao Y, Zhang J.   +10 more
europepmc   +2 more sources

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
A comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +2 more sources

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion. [PDF]

Micromachines (Basel)
The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Zhai L, Li X, Ji J, Yu L, Chen L, Chen Y, Xia H, Han Z, Wang J, Jiang X, Yuan S, Zhang T, Hao Y, Zhang J.   +13 more
europepmc   +2 more sources