Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication. [PDF]
Micromachines (Basel)Yin Y, Fan Q, Ni X, Guo C, Gu X.
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Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure. [PDF]
Micromachines (Basel)Liu AC, Huang YW, Chen HC, Kuo HC.
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Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Materials (Basel)Pu T, Li X, Li L, Ao JP.
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Design and validation of a deep learning GAN for predicting <sup>1</sup> <sup>7</sup> <sup>7</sup>Lu dose voxel kernels using GATE/GEANT4 Monte Carlo and IDAC-Dose 2.1 in phantom dosimetry. [PDF]
J Appl Clin Med PhysKapis OE +3 more
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Growth of p-GaN layers over tri-gate
Report on development of growth techniques of pGaN over trigate structures for normally off behaviour ...
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Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]
ACS OmegaTan WH +7 more
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Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]
Discov NanoZhao H +6 more
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Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]
ACS OmegaChen HC +6 more
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Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]
Sensors (Basel)Moscotin M +5 more
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Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]
Materials (Basel)Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
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