Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate [PDF]
Micromachines, 2023 The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han +10 more
doaj +2 more sources
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]
Micromachines (Basel), 2021 We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Wang J +5 more
europepmc +6 more sources
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors [PDF]
Micromachines, 2023 In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN gate
Myeongsu Chae, Hyungtak Kim
doaj +2 more sources
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization [PDF]
Micromachines, 2023 The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li +10 more
doaj +2 more sources
A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication [PDF]
Nanomaterials, 2023 A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication.
Luyu Wang +16 more
doaj +2 more sources
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]
IEEE Transactions on Electron Devices, 2021 In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Guangnan Zhou, Fanming Zeng, Qing Wang
exaly +3 more sources
Energies, 2021 In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese +2 more
exaly +3 more sources
Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion [PDF]
MicromachinesThe explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Lili Zhai +13 more
doaj +2 more sources
Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique
Applied Physics ExpressImproved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching.
Chengcai Wang +3 more
doaj +2 more sources
Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation [PDF]
MicromachinesThis work presents a comprehensive study of GaN-on-Si pseudo-vertical MOSFETs focusing on single-trench and multi-trench designs. Thanks to a gate-first process flow based on an Al2O3/TiN MOS stack, both fabricated devices exhibit promising transistor ...
Valentin Ackermann +8 more
doaj +2 more sources