Results 41 to 50 of about 43,262 (231)
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
core +1 more source
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Energies, 2017 GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini +3 more
doaj +1 more source
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
Micromachines, 2023 As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang +5 more
doaj +1 more source
Crystals, 2023 The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino +8 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
doaj +1 more source
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
IEEE Electron Device Letters, 2022 In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate.
M. Millesimo +7 more
openaire +2 more sources
Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT
, 2023 The conventional p -GaN in Schottky-type p -GaN gate HEMTs is converted into an insulator-like p -GaN, i.e., fully depleted p -GaN in the reverse-biased Schottky junction under forward gate bias ( VGS ), by inadequate activation of Mg.
Zheng, Zheyang +7 more
core +1 more source
Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
doaj +1 more source
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
IEEE Transactions on Electron Devices, 2021 In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests ...
M. Millesimo +6 more
openaire +2 more sources
GAN‐LSTM‐3D: An efficient method for lung tumour 3D reconstruction enhanced by attention‐based LSTM
CAAI Transactions on Intelligence Technology, EarlyView., 2023 Abstract Three‐dimensional (3D) image reconstruction of tumours can visualise their structures with precision and high resolution. In this article, GAN‐LSTM‐3D method is proposed for 3D reconstruction of lung cancer tumours from 2D CT images. Our method consists of three phases: lung segmentation, tumour segmentation, and tumour 3D reconstruction. Lung
Lu Hong +12 more
wiley +1 more source