Results 41 to 50 of about 29,909,859 (245)

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors [PDF]

, 2021
In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON).
Matioli, Elison, Erine, Catherine, Zhu, Minghua, Sohi, Pirouz, Ma, Jun, Nikoo, Mohammad Samizadeh, Nela, Luca, Catherine Erine, Pirouz Sohi, Mohammad Samizadeh Nikoo, Luca Nela, Elison Matioli, Jun Ma, Minghua Zhu   +13 more
core   +1 more source

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in Physics, 2023
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu   +4 more
doaj   +1 more source

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

IEEE Electron Device Letters, 2022
In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate.
M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna, A. N. Tallarico   +7 more
openaire   +2 more sources

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

IEEE Transactions on Electron Devices, 2021
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests ...
M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, B. Bakeroot, S. Decoutere, A. N. Tallarico   +6 more
openaire   +2 more sources

Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT

, 2023
The conventional p -GaN in Schottky-type p -GaN gate HEMTs is converted into an insulator-like p -GaN, i.e., fully depleted p -GaN in the reverse-biased Schottky junction under forward gate bias ( VGS ), by inadequate activation of Mg.
Zheng, Zheyang, Ng, Yat Hon, Shu, Ji, Curatola, Gilberto, Chen, Kevin J., Mouhoubi, Samir, Sun, Jiahui, Silvestri, Marco   +7 more
core   +1 more source

T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range

Results in Physics
In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed
Min-Gi Jeong, Gökhan Atmaca, Ho-Young Cha   +2 more
doaj   +1 more source

-GaN Gate Double-Channel GaN HEMT

, 2023
Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen, Zheng, Zheyang, Junting Chen, Mengyuan Hua, Chen, Tao, Hua, Mengyuan, Liao, Hang, Chen, Junting, Hang Liao, Cheng, Yan, Kevin J. Chen, Zheyang Zheng, Feng, Sirui, Chen, Kevin J., Sirui Feng, Yan Cheng   +15 more
core   +1 more source

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs

IEEE Electron Device Letters, 2023
In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro, Zagni, Nicolo', Verzellesi, Giovanni, Cioni, Marcello, Giorgino, Giovanni, Nicotra, Maria Concetta, Castagna, Maria Eloisa, Iucolano, Ferdinando   +7 more
openaire   +2 more sources