Results 41 to 50 of about 104,754 (247)

GAN‐LSTM‐3D: An efficient method for lung tumour 3D reconstruction enhanced by attention‐based LSTM

CAAI Transactions on Intelligence Technology, EarlyView., 2023
Abstract Three‐dimensional (3D) image reconstruction of tumours can visualise their structures with precision and high resolution. In this article, GAN‐LSTM‐3D method is proposed for 3D reconstruction of lung cancer tumours from 2D CT images. Our method consists of three phases: lung segmentation, tumour segmentation, and tumour 3D reconstruction. Lung
Lu Hong, Mohammad Hossein Modirrousta, Mohammad Hossein Nasirpour, Mohammadreza Mirshekari Chargari, Fardin Mohammadi, Seyed Vahid Moravvej, Leila Rezvanishad, Mohammadreza Rezvanishad, Ivan Bakhshayeshi, Roohallah Alizadehsani, Imran Razzak, Hamid Alinejad‐Rokny, Saeid Nahavandi   +12 more
wiley   +1 more source

T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range

Results in Physics
In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed
Min-Gi Jeong, Gökhan Atmaca, Ho-Young Cha   +2 more
doaj   +1 more source

A review on the GaN-on-Si power electronic devices

Fundamental Research, 2022
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The
Yaozong Zhong, Jinwei Zhang, Shan Wu, Lifang Jia, Xuelin Yang, Yang Liu, Yun Zhang, Qian Sun   +7 more
doaj   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs [PDF]

, 2017
A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations.
Abbate, Alberto Castellazzi, Chonan, Gang, Huang, Jones, Khandelwal, Landel, Martin Pfost, Mocanu, Oeder, Su, Thorsten Oeder, Uemoto, Unger   +14 more
core   +2 more sources

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]

, 2014
The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H, Montes Bajo, Miguel, Sun, Huarui, Uren, Michael J   +3 more
core   +2 more sources

Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch

IEEE Transactions on Electron Devices
This article is about the study and characterization of a monolithically integrated dual-gate bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line. The switch is based on a p-GaN gate enhancement-mode (E-mode) high-electron-mobility transistor (HEMT) rated for 650 V and provides a symmetrical electrical operation in
G. Baratella, U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, B. Bakeroot, S. Decoutere   +7 more
openaire   +2 more sources

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates [PDF]

IEEE Transactions on Electron Devices, 2020
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides.
Zhou, Guangnan, Wan, Zeyu, Yang, Gaiying, Jiang, Yang, Sokolovskij, Robert, Yu, Hongyu, Guangrui, Xia   +7 more
openaire   +2 more sources

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source