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Study on eye movement characteristics and intervention of basketball shooting skill [PDF]
PeerJ, 2022 Background The shooting aiming point is very important in basketball because it may affect the field goal percentage (FG%). The purpose of this study was to explore the influence of shooting aiming point practice on FG% and to search for new training ...
Qifeng Gou, Sunnan Li, Runping Wang
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Frontiers in Materials, 2023 Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. However,
Kwang Jae Lee +7 more
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Biological diversity and conservation of forest ecosystems in Kyrgyzstan [PDF]
Сибирский лесной журнал, 2016 Kyrgyzstan is a natural repository of genetic resources and the diversity of species and natural laboratory, where at the small area are represented almost all altitudinal belts, ranging from semi-desert, ending with glacial-nival belt.
Sh. B. Bikirov +5 more
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Crystals, 2023 A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K.
An Yang +13 more
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The results of introduction of Scots pine Pinus sylvestris L. in Northen Kyrgyzstan [PDF]
Сибирский лесной журнал, 2017 The forests of Northern Kyrgyzstan are distinguished by poor species composition. Severe forest growing conditions, dry climate, vertical zoning, exposition of forests to the northern slopes, while the opposite slopes are treeless created a more or less ...
A. V. Ivanov
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NIIN As an Ohmic Contact to P-GAN [PDF]
MRS Proceedings, 1998 AbstractBased on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound Niln as a possible ohmic contact. The contacts were fabricated by depositing Niln on p-GaN films (p ∼ 2 × 1017 cm-3) using RF sputtering from a compound target.
D. B. Ingerly, Y. A. Chang, Y. Chen
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Advanced Materials Interfaces, 2023 The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology.
Bhishma Pandit +10 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
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IEEE Journal of the Electron Devices Society, 2022 A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
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