Results 1 to 10 of about 18,647,368 (293)
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Crystals, 2023 A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K.
An Yang +13 more
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The results of introduction of Scots pine Pinus sylvestris L. in Northen Kyrgyzstan [PDF]
Сибирский лесной журнал, 2017 The forests of Northern Kyrgyzstan are distinguished by poor species composition. Severe forest growing conditions, dry climate, vertical zoning, exposition of forests to the northern slopes, while the opposite slopes are treeless created a more or less ...
A. V. Ivanov
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NIIN As an Ohmic Contact to P-GAN [PDF]
MRS Proceedings, 1998 AbstractBased on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound Niln as a possible ohmic contact. The contacts were fabricated by depositing Niln on p-GaN films (p ∼ 2 × 1017 cm-3) using RF sputtering from a compound target.
D. B. Ingerly, Y. A. Chang, Y. Chen
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Advanced Materials Interfaces, 2023 The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology.
Bhishma Pandit +10 more
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IEEE Journal of the Electron Devices Society, 2022 A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
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Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
AIP Advances, 2021 We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min).
Guangnan Zhou +7 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021 In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland +11 more
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The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD [PDF]
Engineering and Technology Journal, 2023 The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser ...
Haneen Jabar +3 more
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Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
IEEE Journal of the Electron Devices Society, 2020 Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu +8 more
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