Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs [PDF]
Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
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High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization [PDF]
Fundamental ResearchImproving the hole concentration in p-GaN specimens has posed a major challenge due to the high activation energy of Mg doping in GaN. Recently, a delta doping technique for modulating the valence band and increasing the Mg ionization efficiency in GaN ...
Tao Zhang +8 more
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Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]
Micromachines (Basel), 2021 We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Wang J +5 more
europepmc +6 more sources
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode [PDF]
Micromachines, 2021 In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or
Tae-Hyeon Kim +3 more
doaj +2 more sources
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate [PDF]
MicromachinesThis work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han +9 more
doaj +2 more sources
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications [PDF]
Scientific ReportsThe continuous evolution of high-power and high-frequency electronic devices demands advanced semiconductor technologies. The proposed GaN p-FET device architecture incorporates a p-GaN source region that enables the simultaneous formation of two ...
Mohit Kumar +5 more
doaj +2 more sources
Study on eye movement characteristics and intervention of basketball shooting skill [PDF]
PeerJ, 2022 Background The shooting aiming point is very important in basketball because it may affect the field goal percentage (FG%). The purpose of this study was to explore the influence of shooting aiming point practice on FG% and to search for new training ...
Qifeng Gou, Sunnan Li, Runping Wang
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Frontiers in Materials, 2023 Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. However,
Kwang Jae Lee +7 more
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Biological diversity and conservation of forest ecosystems in Kyrgyzstan [PDF]
Сибирский лесной журнал, 2016 Kyrgyzstan is a natural repository of genetic resources and the diversity of species and natural laboratory, where at the small area are represented almost all altitudinal belts, ranging from semi-desert, ending with glacial-nival belt.
Sh. B. Bikirov +5 more
doaj +1 more source
Crystals, 2023 A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K.
An Yang +13 more
doaj +1 more source