Results 41 to 50 of about 80,998 (291)

AlGaN Heterostructure Optimization for Photodetectors [PDF]

, 2016
GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-i-n structures for ...
Didenko, S.I., Fedorchenko, I.V., Krasnov, А.А., Legotin, S.A., Melnik, M.S., Osipov, Yu.V., Rabinovich, О.I., Sergeev, K.A.   +7 more
core   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT

Micromachines
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei   +7 more
doaj   +1 more source

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
Edge termination has emerged as an important area in the design and realization of vertical GaN power electronic devices. While the material properties of GaN are promising for high-performance devices, in practice the breakdown voltage can be ...
Yu Duan, Jingshan Wang, Andy Xie, Zhongtao Zhu, Patrick Fay   +4 more
doaj   +1 more source

InGaN/GaN light-emitting diode with a polarization tunnel junction [PDF]

, 2013
Cataloged from PDF version of article.We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions.
Demir, H. V., Hasanov, N., Ji, Y., Ju, Z., Kyaw, Z., Liu, W., Sun, X. W., Tan, S. T., Zhang, Z. H.   +8 more
core   +1 more source

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Micromachines, 2020
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout).
Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung Hee Lee, Dong Seok Kim   +4 more
doaj   +1 more source

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]

, 2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro, Martínez, Pedro J., Maset, Enrique, Morilla García, Yolanda   +3 more
core   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]

APL Electronic Devices
In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler, W. Y. Ho, E. Farzana, S. Krishnamoorthy, J. S. Speck   +4 more
doaj   +1 more source

Impact of various cleaning procedures on p‐GaN surfaces

Surface and Interface Analysis, 2023
This work discusses the influence of different cleaning procedures on p‐gallium nitride (GaN) grown on sapphire by metal–organic chemical vapor deposition. The cleaned p‐GaN surface was transferred into an ultrahigh vacuum chamber and studied by an X‐ray photoelectron spectrometer, revealing that a cleaning with a so‐called “piranha” procedure results ...
Schaber, J., Xiang, R., Arnold, A., Ryzhov, A., Teichert, J., Murcek, P., Zwartek, P., Ma, S., Michel, P.   +8 more
openaire   +1 more source