Results 41 to 50 of about 18,647,368 (293)

Alterations in lipid metabolism gene expression and abnormal lipid accumulation in fibroblast explants from giant axonal neuropathy patients

BMC Genetics, 2007
Background Giant axonal neuropathy (GAN) is a hereditary neurological disorder that affects both central and peripheral nerves. The main pathological hallmark of the disease is abnormal accumulations of intermediate filaments (IFs) in giant axons and ...
Goryunov Dmitry, Shu Chang, Pang Yinghua, Leung Conrad L, Liem Ronald KH   +4 more
doaj   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT

Micromachines
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei   +7 more
doaj   +1 more source

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
Edge termination has emerged as an important area in the design and realization of vertical GaN power electronic devices. While the material properties of GaN are promising for high-performance devices, in practice the breakdown voltage can be ...
Yu Duan, Jingshan Wang, Andy Xie, Zhongtao Zhu, Patrick Fay   +4 more
doaj   +1 more source

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Micromachines, 2020
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout).
Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung Hee Lee, Dong Seok Kim   +4 more
doaj   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]

APL Electronic Devices
In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler, W. Y. Ho, E. Farzana, S. Krishnamoorthy, J. S. Speck   +4 more
doaj   +1 more source

Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN

, 2014
We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors.
Edwards, P. R., Bruckbauer, J., Oliver, R. A., Kraeusel, S., Moram, M. A., Lovelock, S., Trager-Cowan, C., Naresh-Kumar, G., Martin, R. W., Humphreys, C. J., Hourahine, B., Kappers, M. J.   +11 more
core   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals, 2020
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun   +6 more
doaj   +1 more source

Transparent ZnO-Based Ohmic Contact to p-GaN [PDF]

MRS Proceedings, 2001
AbstractHighly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10-
Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., Ochalski, T., Barcz, A., Dietl, T., Matsukura, F., Sawicki, M., Wawro, A., Zielinski, M., Jasinski, J., Liliental-Weber, Z.   +14 more
openaire   +2 more sources