Results 41 to 50 of about 73,947 (261)

Re‐Purposing Sapropterin (Kuvan) for ACTA2‐Related Multisystemic Smooth Muscle Dysfunction Syndrome: A Translational Mechanistic and First‐In‐Human Therapeutic Report

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Multisystemic smooth muscle dysfunction syndrome (MSMDS) is an ultra‐rare, ACTA2‐related disorder characterized by severe cerebrovascular disease, aortic aneurysms, and smooth muscle dysfunction. Using molecular dynamics simulations and in silico drug screening, we identified that sapropterin dihydrochloride (Kuvan) is a candidate capable of ...
Moran Hausman‐Kedem, Noa Bielopolski, Vijai Krishnan, Shane Wald‐Altman, Shelly I Shrian, Omer Bar‐Yosef, Livia Kapusta, Claire Shamber, Patricia L. Musolino, Miguel Weil   +9 more
wiley   +1 more source

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals, 2020
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun   +6 more
doaj   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

IEEE Journal of the Electron Devices Society
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer.
Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang   +11 more
doaj   +1 more source

Transparent ZnO-Based Ohmic Contact to p-GaN [PDF]

MRS Proceedings, 2001
AbstractHighly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10-
Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., Ochalski, T., Barcz, A., Dietl, T., Matsukura, F., Sawicki, M., Wawro, A., Zielinski, M., Jasinski, J., Liliental-Weber, Z.   +14 more
openaire   +2 more sources

Ontology‐Aligned Structuring and Reuse of Multimodal Materials Data and Workflows Toward Automatic Reproduction

Advanced Engineering Materials, EarlyView.
Reproduction of stacking fault energy calculations from literature with a semi‐automated large language model‐assisted extraction procedure: extraction of simulation protocol, atomistic structures, computational parameters, and reported results, ontology alignment, knowledge graph construction and, finally, recomputation forvalidation.
Sepideh Baghaee Ravari, Abril Azocar Guzman, Sarath Menon, Stefan Sandfeld, Tilmann Hickel, Markus Stricker   +5 more
wiley   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

Mechanistic Control of C─H Bond Activation and C─C Coupling in Light‐Driven Methane Conversion to C2+ Products over Multifunctional Photocatalysts

Advanced Functional Materials, EarlyView.
Methane photocatalytic activation under mild conditions remains a formidable challenge in the synthesis of solar fuels. In this review, we emphasize the growing importance of multifunctional materials and hybrid systems within a unified mechanistic framework that integrates selective C─H bond activation, formation and control of intermediates, C─C ...
Di Hu, Yuheng Jiang, Vitaly V. Ordomsky, Bastian Mei, Zhiyong Tang, Andrei Y. Khodakov   +5 more
wiley   +1 more source

kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]

APL Electronic Devices
This study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck, Sriram Krishnamoorthy   +4 more
doaj   +1 more source