Results 41 to 50 of about 29,698,260 (294)

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [PDF]

, 2014
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs)
Hasanov, N., Zhu, Binbin, Demir, Hilmi Volkan, Ji, Yun, Zhang, Y., Sun, X. W., Tan, S. T., Zhang, Z. H., Tan, Swee Tiam, Zhang, Xue Liang, Sun, Xiao Wei, Zhang, X. L., Kyaw, Zabu, Liu, Wei, Liu, W., Zhu, B., Ji, Y., Lu, S., Hasanov, Namig, Zhang, Yiping, Zhang, Zi-Hui, Ju, Zhen Gang, Lu, Shunpeng, Ju, Z. G., Kyaw, Z.   +24 more
core   +1 more source

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

Advanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma, Paolo De Vincenzi, Nadine Denis, Francesca Santangeli, Riccardo Pallucchi, Harikrishnan Gopalakrishnan, Elena Blundo, Antonio Polimeni, Marco Felici, Fumitaro Ishikawa, Marta De Luca   +10 more
wiley   +1 more source

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Micromachines, 2020
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout).
Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung Hee Lee, Dong Seok Kim   +4 more
doaj   +1 more source

APTES‐Mediated Ti‐Squarate MOF/n‐GaN Nanowire Photoanodes for Efficient Photoelectrochemical Water Splitting

Advanced Functional Materials, EarlyView.
The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh, Sergio Carrasco, Sooyeon Ra, Seok‐Ho Seo, Chandran Bagavath, Sung‐Un Kim, Min‐Seok Lee, Jong‐Su Kim, Miriam Vos‐Gracia, Dan Na, Kyung‐Hwan Jin, Sangmin An, Dong Ick Son, Cheul‐Ro Lee, Patricia Horcajada, Yong‐Ho Ra   +15 more
wiley   +1 more source

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

, 2010
A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector.
Yang H, Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn, Zhao DG, H, Zhu JJ, Wang, Zhang SM, Jiang DS, Liu ZS, D.G. Zhao, Hui Yang, Z.S. Liu, D.S. Jiang, H. Wang, J.J. Zhu, S.M. Zhang   +15 more
core   +1 more source

Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

IEEE Journal of the Electron Devices Society
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer.
Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang   +11 more
doaj   +1 more source