Results 61 to 70 of about 80,998 (291)

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging [PDF]

, 2012
A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging
Chen, Y. J., Chen, Z. Z., Dawson, M. D., Edwards, P. R., Gong, Z., Gu, E., Liu, N. Y., Martin, R. W., Tao, Y. B., Watson, I. M., Xie, E. Y., Zhang, G. Y., Zhang, Y. F.   +12 more
core   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]

APL Electronic Devices
This study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck, Sriram Krishnamoorthy   +4 more
doaj   +1 more source

ZnO Nanorods Grown on p-GaN Using Hydrothermal Synthesis and Its Optoelectronic Devices Application [PDF]

, 2007
The ZnO nanorods with the length of 1-1.5 μm were deposited on p-GaN by hydrothermal synthesis at low temperature 100°C. The structural and optical properties of the as-grown ZnO rods were investigated by X-Ray diffraction (XRD) and photoluminescence ...
Chua, Soo-Jin, Fitzgerald, Eugene A., Le, Hong Quang, Loh, Kian Ping   +3 more
core  

Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading [PDF]

, 2011
We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect.
Kudryk, Y. Y., Zinovchuk, A. V.
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

AIP Advances, 2022
The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles.
Yuhao Zhou, Qianshu Wu, Qi Zhang, Chengzhang Li, Jinwei Zhang, Zhenxing Liu, Ke Zhang, Yang Liu   +7 more
doaj   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes [PDF]

, 2013
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material.
Aimez, Vincent, Andre, Nicolas, Bay, Annick, Belarouci, Ali, Francis, Laurent A., Sarrazin, Michael, Vigneron, Jean Pol   +6 more
core   +2 more sources