Results 61 to 70 of about 29,698,260 (294)

Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications

Advanced Materials Technologies, EarlyView.
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo, Sina Jamali, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

Moisture‐Adaptive Triboelectric Materials and Platforms: Design Strategies, Performance Enhancement, and Applications in Energy Harvesting and Wearable Electronics

Advanced Materials Technologies, EarlyView.
This review summarizes moisture‐adaptive strategies that enable triboelectric nanogenerators (TENGs) to operate across diverse moisture conditions. It examines moisture‐management methods, including exclusion, directional transport, removal, and utilization, with charge‐regulation approaches based on interfacial, dielectric, and structural engineering.
Junzhe Gan, Zhao Sha, Xuehua Zhang, Hoang‐Phuong Phan, Jin Zhang   +4 more
wiley   +1 more source

Radiation Effects in p-GaN/AlGaN/GaN HEMTs: A Cross-Source Investigation

IEEE Access
This work presents a comprehensive experimental investigation of radiation effects on p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) under 14 MeV neutrons, 10 keV X-rays, and 1.25 MeV $\gamma $ -rays.
Alexis C. Vilas-Boas, Saulo G. Alberton, Thalia A. Silva, Paulo R. Garcia, Nilberto H. Medina, Vitor A. P. Aguiar, Roberto B. B. Santos, Renato C. Giacomini, Tassio C. Cavalcante, Luis E. Seixas, Saulo Finco, Francisco R. Palomo, Marcilei A. Guazzelli   +12 more
doaj   +1 more source

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

Micromachines, 2023
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang, Wenchao Tian, Xiaohua Ma   +11 more
doaj   +1 more source

Information Transmission Strategies for Self‐Organized Robotic Aggregation

Advanced Robotics Research, EarlyView.
In this review, we discuss how information transmission influences the neighbor‐based self‐organized aggregation of swarm robots. We focus specifically on local interactions regarding information transfer and categorize previous studies based on the functions of the information exchanged.
Shu Leng, Zihan Li, Yifeng Shao, Jinhao Liu, Li Yu, Shuguang Li   +5 more
wiley   +1 more source

kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]

APL Electronic Devices
This study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck, Sriram Krishnamoorthy   +4 more
doaj   +1 more source

Nonlocomotory Robotic Strategies for Dynamic Rotation Control in Terrestrial Robots: A Review

Advanced Robotics Research, EarlyView.
Terrestrial robots increasingly require rapid body rotation to maintain stability and agility in complex environments. This review shows nonlocomotory rotational control strategies that operate without ground contact, including reaction wheels, tails, bars, limbs, and thrusters.
Y. Liang, J. An, X. Zheng, D. Wang, S. Wang, X. Wang, P. Zhu, J. Pei, S. Li, J. Paripurana, Y. Han, Z. Tang, X. Gan, Q. He, X. Ma   +14 more
wiley   +1 more source

Fabrication of p-type porous GaN on silicon and epitaxial GaN [PDF]

, 2013
Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN.
D. Drouin, M. Aguiló, Diaz, Francesc, Carvajal, Joan J., F. Díaz, Parbrook, Peter J., Giguere, A., O. V. Bilousov, O\u27Dwyer, Colm, Zubialevich, Vitaly Z., V. Z. Zubialevich, J. J. Carvajal, Drouin, Dominique, H. Geaney, Aguilo, Magdalena, Bilousov, Oleksandr V., A. Giguère, P. J. Parbrook, Geaney, Hugh, C. O'Dwyer, O'Dwyer, Colm   +20 more
core   +1 more source

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Nanoscale Research Letters, 2011
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching.
Wang Yongjin, Hu Fangren, Hane Kazuhiro
doaj  

Robotics in Ionizing Radiation Environments: Vulnerabilities, Hardening, and Future Directions

Advanced Robotics Research, EarlyView.
Radiation exposure causes cumulative degradation in robotic sensors, actuators, and electronic logic, often leading to undetected failures. This study maps component vulnerabilities, evaluates hardening and shielding strategies, and identifies testing gaps that must be addressed to enable next‐generation radiation‐tolerant robotic systems.
Francis A. K. Djirackor, Josephine T. Djirackor, Amanuel Abrdo Tereda, Sun Yi, Younho Seong   +4 more
wiley   +1 more source