Results 61 to 70 of about 73,947 (261)

A New Vertical p-GaN Island Double-Trench MOSFET with High Voltage Resistance and Low Leakage

Medžiagotyra
Due to the higher breakdown voltage (VDSmax) and anticipated improved reliability, vertical gallium nitride (GaN) metal-oxide-semiconductor field-effect transistors (MOSFETs) are a focal point in next-generation power device research.
Ming DU, Haiqing ZHANG, Shiqi JIN, Bo ZHANG, Wei MAO, Xuefeng ZHENG, Yue HAO   +6 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

Advanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena, J. Terence Blaskovits, Kun‐Han Lin, Denis Andrienko   +3 more
wiley   +1 more source

Surface Properties of p‐GaN and Formation of Nickel Metal Contacts

Advanced Materials Interfaces
Nickel (Ni) is the key component in ohmic contacts for Mg‐doped p‐GaN, but the detailed formation mechanisms of the ohmic contact have not yet been understood.
Mikko Miettinen, Vesa Nuutila, Zahra Jahanshah Rad, Masoud Ebrahimzadeh, Anni Ruokonen, Risto Punkkinen, Juha‐Pekka Lehtiö, Marko Punkkinen, Pekka Laukkanen, Kalevi Kokko, Sami Suihkonen, Hele Savin, Weimin Wang   +12 more
doaj   +1 more source

Electrically Coded Retinomorphic Spectrophotodetector

Advanced Materials, EarlyView.
Self‐powered retinomorphic pyro‐photodetector is demonstrated that avoids machine‐learning post‐processing and covers 365–940 nm. Electrostatic balancing of built‐in potential produces an electrical wavelength code, delivering <3 nm wavelength decoding accuracy with ∼46 µs response.
Mohit Kumar, Hyunmin Dang, Hyungtak Seo
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

International Journal of Photoenergy, 2014
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized ...
Aniruddha Singh Kushwaha, Pramila Mahala, Chenna Dhanavantri   +2 more
doaj   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Performance analysis of serial and shunt microwave switches designed with p-i-n diodes of different semiconductor materials

Revista Facultad de Ingeniería Universidad de Antioquia, 2013
A performance analysis of serial and shunt microwave switches based on p-i-n diodes of different semiconductor materials is presented. The materials analyzed are Si, GaAs, SiC, GaN, InP and GaSb. The serial type microwave switch designed with GaSb, GaAs,
Gabriela Leija Hernández, José Luis López Bonilla, Luis Alejandro Iturri Hinojosa   +2 more
doaj   +1 more source