Results 71 to 80 of about 80,998 (291)

Polymer Interface Enables Reversible Quasi‐Solid Sulfur Conversion in Sodium‐Sulfur Batteries

Advanced Functional Materials, EarlyView.
The polymer interface enables a stable quasi‐solid sulfur conversion pathway in room‐temperature Na─S batteries. The coating regulates Na+ transport, stabilizes the cathode–electrolyte interphase, and accommodates mechanical stress, suppressing electrolyte decomposition and sulfur migration, thereby improving reaction uniformity, reducing polarization,
Reza Andaveh, Ying Zhao, Enzhong Jin, Zixin Zhang, Vinicius Martins, Parham Pirayesh, Yi Gan, Yi Yuan, Yijia Wang, Frederick Benjamin Holness, Changhong Cao, Jun Song, Yang Zhao   +12 more
wiley   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Micromachines, 2021
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR)
Yang Dai, Qingsong Ye, Jiangtao Dang, Zhaoyang Lu, Weiwei Zhang, Xiaoyi Lei, Yunyao Zhang, Han Zhang, Chenguang Liao, Yang Li, Wu Zhao   +10 more
doaj   +1 more source

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

, 2011
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in ...
Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth   +2 more
core   +1 more source

2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems

Advanced Materials, EarlyView.
A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley   +1 more source

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Nanoscale Research Letters, 2011
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching.
Wang Yongjin, Hu Fangren, Hane Kazuhiro
doaj  

Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy

Crystals, 2023
Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the N/Ga flux ratio ...
Ying-Chieh Wang, Ikai Lo, Yu-Chung Lin, Cheng-Da Tsai, Ting-Chang Chang   +4 more
doaj   +1 more source

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT

Electronics, 2023
A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT).
Xiaoyu Ding, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang, Xinping Zhang   +8 more
openaire   +1 more source

AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment

, 2019
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable.
Hatui, Nirupam, Jang, Raina, Keller, Stacia, Koksaldi, Onur, Krishna, Athith, Mishra, Umesh, Raj, Aditya   +6 more
core   +1 more source

Freeform Fabrication of Layered Halide Perovskite Nanowire Heterojunctions

Advanced Materials, EarlyView.
‘All‐at‐once’ freeform fabrication of layered perovskite nanowire heterojunctions is realized by 3D printing employing meniscus‐guided crystallization. The integration of nanoscale additive manufacturing with layered halide perovskites will provide a versatile platform to freely design and realize highly stable perovskite‐based optoelectronic ...
Sixi Cao, Yu Liu, Zhuofei Gan, Shiqi Hu, Jihyuk Yang, Zhuoran Wang, Mingjian Yuan, Wen‐Di Li, Ji Tae Kim   +8 more
wiley   +1 more source