Results 71 to 80 of about 18,647,368 (293)
Advanced Materials Technologies, EarlyView.The article overviews past and current efforts on caloric materials and systems, highlighting the contributions of Ames National Laboratory to the field. Solid‐state caloric heat pumping is an innovative method that can be implemented in a wide range of cooling and heating applications.
Agata Czernuszewicz +5 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts [PDF]
, 2009 The electrical properties of rare-earth-metal Schottky contacts to p-GaN were characterized with current-voltage (I-V) and capacitance- voltage (C-V) measurements for the first time. Three kinds of rare-earth-metal films of Dy, Er, and Gd, which have low-
OGISU, Keita +3 more
core
, 2016 Two InGaN/GaN multiple quantum well solar cells with different p-GaN layers are grown, and the effect of p-type GaN resistivity on the spectral response of the solar cells is investigated.
Jian-Jun Zhu +23 more
core +1 more source
Advanced Materials Technologies, EarlyView.Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee +2 more
wiley +1 more source
Exciton Radiative Lifetimes in Hexagonal Diamond Ge and SixGe1–x Alloys
Advanced Optical Materials, EarlyView.Strong room‐temperature photoluminescence reported in hexagonal Ge conflicts with theory predicting a nearly dark band edge. First‐principles calculations of excitonic radiative lifetimes fill a key gap in this debate, showing that pristine hexagonal Ge remains intrinsically weakly emissive, while Si alloying only modestly shortens the lifetime and ...
Michele Re Fiorentin +2 more
wiley +1 more source
, 2007 C. crescentus CenK sacculus .<strong>Tilt Series Date:</strong> 2007-05-05</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> <strong> ...
Gan, Lu
core +3 more sources
A New Vertical p-GaN Island Double-Trench MOSFET with High Voltage Resistance and Low Leakage
MedžiagotyraDue to the higher breakdown voltage (VDSmax) and anticipated improved reliability, vertical gallium nitride (GaN) metal-oxide-semiconductor field-effect transistors (MOSFETs) are a focal point in next-generation power device research.
Ming DU +6 more
doaj +1 more source
International Journal of Photoenergy, 2014 We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized ...
Aniruddha Singh Kushwaha +2 more
doaj +1 more source
Revista Facultad de Ingeniería Universidad de Antioquia, 2013 A performance analysis of serial and shunt microwave switches based on p-i-n diodes of different semiconductor materials is presented. The materials analyzed are Si, GaAs, SiC, GaN, InP and GaSb. The serial type microwave switch designed with GaSb, GaAs,
Gabriela Leija Hernández +2 more
doaj +1 more source