Results 81 to 90 of about 29,698,260 (294)
Surface Properties of p‐GaN and Formation of Nickel Metal Contacts
Advanced Materials InterfacesNickel (Ni) is the key component in ohmic contacts for Mg‐doped p‐GaN, but the detailed formation mechanisms of the ohmic contact have not yet been understood.
Mikko Miettinen +12 more
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Advanced Science, EarlyView.Conjugated poly(imide dioxime)‐based microspheres establish a radiometal coordination‐driven conformational interlocked network with ultra‐high radiostability. This platform enables low‐temperature, multi‐radionuclide labeling for SPECT/PET/MRI imaging and radionuclide therapy. Mechanistic insights from EXAFS and DFT reveal enhanced stability, while in
Xiao Xu +10 more
wiley +1 more source
, 2007 C. crescentus CenR sacculus .<strong>Tilt Series Date:</strong> 2007-05-18</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> <strong> ...
Gan, Lu
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Advanced Science, EarlyView.This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung +12 more
wiley +1 more source
p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响
, 2008 研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明:较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中 ...
赵德刚, 周梅
core
Advanced Science, EarlyView.Ultraviolet (UV) imagers are important for a variety of applications but often require dedicated semiconductor process flows. Here, a versatile capacitive CMOS platform is transformed into a visible‐blind, multispectral UV imager through post‐CMOS functionalization with solution‐processed metal‐oxide nanoparticles. The UV‐induced photodielectric effect
Suman Kundu +5 more
wiley +1 more source
Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors
, 2008 We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when ...
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn +2 more
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Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT
MicromachinesIn this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice.
Roberto Baca-Arroyo
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Advanced Science, EarlyView.An NbS3/WSe2 van der Waals heterostructure realizes a continuously gate‐tunable self‐powered photovoltaic response through interfacial band‐alignment modulation and reversible built‐in electric‐field switching. The short‐circuit photocurrent scales linearly with incident power density, while short‐circuit photoresponsivity varies linearly with gate ...
Jidong Liu +9 more
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This paper introduces Factor-GAN, an innovative framework that utilizes Generative Adversarial Networks (GAN) technology for factor investing. Leveraging a comprehensive factor database comprising 70 firm characteristics, Factor-GAN integrates deep ...
Jiawei Wang (18450225)
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