Results 101 to 110 of about 18,647,368 (293)

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Reinforcing Oxygen Activation of Spinel Oxide via Mn─O Covalency Engineering for VOCs Oxidation

Advanced Science, EarlyView.
A MnCo spinel catalyst with weakened Mn─O covalency was synthesized via a hard‐template method. The reduced Mn─O covalency facilitates localized electron redistribution, promoting the activation of both molecular oxygen and lattice oxygen, and thereby enabling the efficient and complete oxidation of VOCs (ethyl acetate, toluene, and propane).
Gan Li, Ruochen Zhou, Qianqian Chen, Guobo Li, Xiang Tu, Fengbo Yu, Wenming Liu, Jian Ji, Honggen Peng   +8 more
wiley   +1 more source

Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites

Advanced Science, EarlyView.
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren, Xi Zhang, Yicheng Wang, Shuai Wang, Zhi Wang, Yumeng Li, Jikai Yang, Xin Wang, Weijun Chen, Yining Mu   +9 more
wiley   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

, 2010
A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector.
Yang H, Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn, Zhao DG, H, Zhu JJ, Wang, Zhang SM, Jiang DS, Liu ZS   +8 more
core  

Factor-GAN

This paper introduces Factor-GAN, an innovative framework that utilizes Generative Adversarial Networks (GAN) technology for factor investing. Leveraging a comprehensive factor database comprising 70 firm characteristics, Factor-GAN integrates deep ...
Jiawei Wang (18450225)
core   +1 more source

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

Advanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun, Mohammad Rezaei, Yuheng Hu, Guan‐Jun Zhang, Elison Matioli   +4 more
wiley   +1 more source

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
openaire   +1 more source

Electrolytic Etching of n -Type GaN Films Using Sodium Hydroxide [PDF]

, 1997
Electrolytic etching. of high quality GaN films grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire substrate using a sodium hydroxide (NaOH) electrolyte is reported on.
OHKUBO, Mitsugu
core