Results 121 to 130 of about 80,998 (291)

Leveraging Artificial Intelligence and Large Language Models for Cancer Immunotherapy

open access: yesAdvanced Science, EarlyView.
Cancer immunotherapy faces challenges in predicting treatment responses and understanding resistance mechanisms. Artificial intelligence (AI) and machine learning (ML) offer powerful solutions for cancer immunotherapy in patient stratification, biomarker discovery, treatment strategy optimization, and foundation model development.
Xinchao Wu   +4 more
wiley   +1 more source

Sertoli Cell‐Derived Extracellular Vesicles Orchestrate Cadmium‐Induced Testicular Inflammation and Fibrosis

open access: yesAdvanced Science, EarlyView.
Environmental cadmium exposure disrupts testicular homeostasis through a novel intercellular communication axis. Stressed Sertoli cells release extracellular vesicles carrying damage‐associated molecular patterns and mitochondrial fragments, which activate macrophages via TLR4/NF‐κB signaling.
Jianfeng Ma   +17 more
wiley   +1 more source

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes. [PDF]

open access: yesMaterials (Basel), 2023
Levchenko I   +6 more
europepmc   +1 more source

Multimodal Wearable Biosensing Meets Multidomain AI: A Pathway to Decentralized Healthcare

open access: yesAdvanced Science, EarlyView.
Multimodal biosensing meets multidomain AI. Wearable biosensors capture complementary biochemical and physiological signals, while cross‐device, population‐aware learning aligns noisy, heterogeneous streams. This Review distills key sensing modalities, fusion and calibration strategies, and privacy‐preserving deployment pathways that transform ...
Chenshu Liu   +10 more
wiley   +1 more source

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

open access: yes
Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq   +3 more
openaire   +1 more source

18β‐Glycyrrhetinic Acid and a Nano‐Liposomal Formulation Alleviate Depression‐Like Behaviors via the Microglial mTOR‐Autophagy‐NLRP3 Axis

open access: yesAdvanced Science, EarlyView.
Using a novel zebrafish‐based inflammatory screening strategy, we screened and identified 18β‐glycyrrhetinic acid (18β‐GA) as a promising anti‐inflammatory candidate. We uncover a microglial mTOR–autophagy–NLRP3 axis that constitutes the mechanistic core of 18β‐GA–mediated neuroprotection.
Hua Gan   +11 more
wiley   +1 more source

Bioinspired Adaptive Leg‐Claw Enables Robust Perching and Grasping for UAVs

open access: yesAdvanced Science, EarlyView.
Inspired by owl limb morphology and bat roosting behavior, this study presents a bioinspired adaptive leg‐claw mechanism that enables UAVs to perform robust and versatile perching and grasping. The design integrates a four‐link tibial structure, tension‐driven deformable feet, and active control, enabling stable perching on various branches and ...
Tianyu Cheng   +6 more
wiley   +1 more source

Energy‐Resolved Femtosecond Dynamics of Plasmon‐Induced Hole Injection at Au/GaN Heterointerfaces

open access: yesAdvanced Science, EarlyView.
We reveal the spectral signature of ultrafast nonthermal hot‐hole transfer at plasmonic heterointerfaces, which reshapes hot‐carrier relaxation dynamics and significantly enhances hydrogen evolution, providing a mechanistic basis for optimizing hot‐carrier utilization in photocatalysis.
Yuying Gao   +8 more
wiley   +1 more source

T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range

open access: yesResults in Physics
In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed
Min-Gi Jeong   +2 more
doaj   +1 more source

Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch

open access: yesIEEE Transactions on Electron Devices
This article is about the study and characterization of a monolithically integrated dual-gate bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line. The switch is based on a p-GaN gate enhancement-mode (E-mode) high-electron-mobility transistor (HEMT) rated for 650 V and provides a symmetrical electrical operation in
G. Baratella   +7 more
openaire   +2 more sources

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