Results 121 to 130 of about 73,947 (261)

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

Advanced Science, EarlyView.
A macroscale tip‐induced strain gradient generates bulk piezo‐charges in GaN, enabling bias‐controlled shielding and selective Schottky barrier modulation. This strain‐gradient piezotronic transistor exhibits electrically switchable high‐ and low‐sensitivity states, providing ultrahigh strain sensitivity and wide tunability for adaptive mechanical ...
Gongwei Hu, Xiaoming Dong, Yihan Zhang, Yong Chao, Menglu Li, Min Liu, Liqing Pan, Lijie Li, Wei Huang, Fobao Huang   +9 more
wiley   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2023
Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, Hao Y.   +10 more
europepmc   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]

Micromachines (Basel), 2022
Wang H, Yuan C, Xin Y, Shi Y, Zhong Y, Huang Y, Lu G.   +6 more
europepmc   +1 more source

Introducing Borsantrazole: A Trifunctional Boron‐Based Pyrazole That Extends the Lifespan of Amyotrophic Lateral Sclerosis Mice

Advanced Science, EarlyView.
Herein we report a boron‐based pyrazole, (Borsantrazole ‐ a small molecule that selectively targets oxidative stress) that significantly increases survival, reduces weight loss, delays disease onset, and affects global protein changes in the SOD1‐G37R mouse model of ALS.
Nitesh Sanghai, Rhonda Kelley, Ying Lao, M. Immanuel Reyes Madlangsakay, Prasanta Paul, M. Alejandra Llanes‐Cuesta, Jun‐Feng Wang, René P. Zahedi, Jiming Kong, Geoffrey K. Tranmer   +9 more
wiley   +1 more source

Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors. [PDF]

Nanoscale Adv, 2023
Zulkifli N'A, Zahir NH, Abdullah Ripain AH, Said SM, Zakaria R.   +4 more
europepmc   +1 more source

Efficient Adsorption‐Based Direct Air Capture Via Triply Periodic Minimal Surface Architectures

Advanced Science, EarlyView.
Architected triply periodic minimal surface (TPMS) contactors reshape direct air capture by replacing straight‐channel diffusion limits with convection‐enhanced CO2 transport. Chaotic advection thins boundary layers and exposes fast adsorption sites, enabling 70%–75% more fast sites, 114% higher productivity, and 51.8% lower energy consumption than ...
Qingyang Shao, Zhuozhen Gan, Chengcheng Long, Man Zhang, Yihe Miao, Yuehui Li, Xuancan Zhu   +6 more
wiley   +1 more source

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2021
Wang J, Chen Z, You S, Bakeroot B, Liu J, Decoutere S.   +5 more
europepmc   +1 more source

Wafer‐Scale Atomically‐Thin Gold: Transferable Platform for Flexible Optoelectronics, Thermal Management and Bio‐Interfaces

Advanced Science, EarlyView.
Combining template stripping with a graphene‐inspired transfer yields continuous, transferable gold films at 6‐inch wafer scale with thicknesses approaching the atomic limit. The atomically smooth, near‐bulk‐quality films offer above 86% transmittance and sub‐20 Ω/square sheet resistance, serving as a universal platform for flexible optoelectronics ...
Dmitry Yakubovsky, Mikhail Mironov, Georgy Ermolaev, Aleksandr Khrebtov, Aleksandr Slavich, Prashant Narute, Pritom Chowdhury, Roman Kirtaev, Igor Khramtsov, Anton Minnekhanov, Gleb Tselikov, Dmitriy Grudinin, Maria Sidorova, Nikolay Pak, Pavel Maslov, Andrey Vyshnevyy, Hongkai Zhou, Vasyl G. Kravets, Alexander N. Grigorenko, Ivan Kruglov, Nikita Orekhov, Dmitry Kireev, Aleksey Arsenin, Kostya S. Novoselov, Valentyn Volkov   +24 more
wiley   +1 more source

Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2022
Wang R, Guo H, Hou Q, Lei J, Wang J, Xue J, Liu B, Chen D, Lu H, Zhang R, Zheng Y.   +10 more
europepmc   +1 more source