Results 111 to 120 of about 80,998 (291)

Learnable Diffusion Framework for Mouse V1 Neural Decoding

Advanced Science, EarlyView.
We introduce Sensorium‐Viz, a diffusion‐based framework for reconstructing high‐fidelity visual stimuli from mouse primary visual cortex activity. By integrating a novel spatial embedding module with a Diffusion Transformer (DiT) and a synthetic‐response augmentation strategy, our model outperforms state‐of‐the‐art fMRI‐based baselines, enabling robust
Kaiwen Deng, Peter S. Schwendeman, Yuanfang Guan   +2 more
wiley   +1 more source

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Genetic Control of Tissue Remodeling by a Non‐Coding SNP in ITGA8 Explains Carotenoid‐Based Color Polymorphism in Marine Mollusks

Advanced Science, EarlyView.
In this study, the orange‐muscle giant abalone (Haliotis gigantea) is used as a model to identify a non‐coding SNP that disrupts the interaction between ITGA8 pre‐mRNA and the splicing factor ILF2, leading to altered ITGA8 splicing. These splicing changes promote carotenoid accumulation in abalone muscle through the regulation of tissue remodeling ...
Xiaohui Wei, Wenzhu Peng, Zekun Huang, Bingye Yang, Yiyu Wu, Minzhen Han, Yi Wang, Bingling Peng, Guosheng Hu, Jiawei Hong, Guijia Liu, Linwei Nie, Yang Gan, Miaoqin Huang, Xuan Luo, Weiwei You, Wen Liu, Caihuan Ke   +17 more
wiley   +1 more source

Study of ICP-induced In doping and the properties of GaN-based LED wafers and devices [PDF]

, 2015
GaN材料属于第三代半导体材料，具有宽的直接带隙以及优异的物理和化学性质，是制作发光器件和光伏器件的理想材料。在信息显示领域，GaN基高亮度蓝、绿发光二极管可以用于户外大屏幕全色显示以及交通信号灯等方面；在照明领域，GaN基白光LED可以用于背光源、路灯和景观照明以及通用照明等。GaN基器件的研究已经取得巨大进展，但是在器件的制备过程中仍存在一些问题，如GaN材料的p型欧姆接触问题则是限制GaN器件发展的主要因素之一。有两方面的原因阻碍低阻p-GaN欧姆接触的实现：一方面是难以生长高空穴浓度的p ...
曾勇平
core  

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs [PDF]

, 2005
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure.
Malyutenko, O. Y., Malyutenko, V. K., Zakheіm, А. L., Zinovchuk, A. V.   +3 more
core  

The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes

Advanced Science, EarlyView.
The images show panchromatic cathodoluminescence of III‐V materials, which reveal that AlGaInP red wafers, having fewer defects, support longer carrier diffusion lengths. Meanwhile, the density of defects increases with longer emission wavelengths in the InGaN system, illustrating how generated carriers pass through the material and how defects limit ...
Jeong‐Hwan Park, Markus Pristovsek, Dong‐Pyo Han, Jiwon Kim, Jong‐In Shim, Bumjoon Kim, Soo Min Lee, Drew Hanser, Dong‐Seon Lee, Yoshio Honda, Tae‐Yeon Seong, Hiroshi Amano   +11 more
wiley   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Leveraging Macrophage Metabolic Reprogramming for Enhanced Anti‐Tumor Immunity

Advanced Science, EarlyView.
Tumor‐associated macrophages (TAMs) are key regulators of the tumor microenvironment (TME), with their metabolic states playing a critical role in tumor progression or regression. This review summarizes current understanding of TAM metabolic plasticity alongside cutting‐edge bioengineering innovations, outlining a roadmap for transforming the ...
Zhiyun Liu, Lingyao Zeng, Xulin Gan, Yilin Zhou, Han Shen, Dan Wu, Xin Shou, Minmin Jiang, Liyun Shi   +8 more
wiley   +1 more source

Beyond the Edge: Basal‐Plane Defects as the Dominant Catalytic Sites in Sulfur‐Doped Graphene

Advanced Science, EarlyView.
Identification of basal‐plane sites in sulfur‐doped graphene challenges the conventional edge‐focused catalytic picture. Sulfur dopants together with inevitable oxygen‐containing groups modulate local charge and spin distributions, enhancing lithium binding and activating ORR/NRR intermediates.
Xuanhao Yuan, Chenhui Wang, Hui Hu, Hao Cui, Yan Li, Chengxin Wang   +5 more
wiley   +1 more source