Results 111 to 120 of about 29,698,260 (294)
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
In this study, we propose a technique to evaluate the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs).
Stockman, Arno +17 more
core +1 more source
Q‐LEAP: Millisecond Hyperdimensional Optimization for Full‐Spectrum Optical Metamaterials
Q‐LEAP integrates physics‐informed residual machine learning with factorization‐machine‐encoded quantum annealing to design full‐spectrum optical metamaterials. It explores a 2108 design space and, in a single 2.56 ms annealing step, reaches 85.83% of the theoretical FoM limit, enabling selective 5‐8 µm emission with 3–5 and 8–14 µm suppression and ∼40×
Zikang Guo +3 more
wiley +1 more source
提出了以弱p型(p~--GaN)为有源区的p-n结构GaN紫外探测器.由于弱p型层的载流子浓度较低,很容易增加耗尽区的宽度,从而可以增加器件的量子效率.通过模拟计算,研究了金属与p~--GaN层的肖特基接触势垒高度、p~--GaN层厚度等参数对器件性能的影响.研究结果表明,降低金属与p~--GaN层的接触势垒高度、适当减小p~--GaN层厚度能够实现有源层方向单一的内建电场,从而提高器件的量子效率.要制备出具有良好性能的p-n结构紫外探测器,必须减小p~--GaN层厚度,降低金属与p ...
赵德刚, 周梅
core
A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang +6 more
wiley +1 more source
提出了一种测量p-GaN载流子浓度的方法,其主要思想是利用p-n+结构GaN探测器长波和短波量子效率的差值随反向偏压的变化关系,找到p-GaN层刚好完全耗尽时的偏压,从而求出p-GaN层载流子浓度.模拟计算表明,该方法能够准确测量出p-GaN层的载流子浓度,而且受表面复合,欧姆接触影响很小.进一步研究了实际测量中如何选择p-GaN层厚度,计算结果表明,p-GaN层的优化厚度值随着p ...
赵德刚, 周梅
core
The findings establish a critical role for WFS1 in human male fertility. Mechanistically, WFS1 interacts with PIAS4 to promote the SUMOylation of key spermatogenesis‐associated proteins, which in turn competitively inhibits their K48‐linked ubiquitin‐mediated degradation during spermatogenesis.
Yunchuan Tian +14 more
wiley +1 more source
一种具有p-GaN层表面粗化的GaN基LED芯片的制作方法,包括:采用金属有机化学气相沉积的方法,在半导体衬底上依次生长低温GaN缓冲层、不掺杂GaN层、N-GaN层、多量子阱层和P-GaN层,形成GaN外延片;将GaN外延片放入蒸发台,在P-GaN层的表面蒸镀CsCl或氯化物;蒸镀结束后,向蒸发台腔室中充入水汽,控制相对湿度使P-GaN层表面的CsCl或氯化物吸收水分逐渐长大形成CsCl或氯化物的纳米岛;将CsCl或氯化物纳米岛作为刻蚀掩膜,对GaN外延片进行刻蚀 ...
王国宏 +4 more
core
An Integrated Artificial Intelligence Framework for Nanomedicine Engineering
This review outlines a closed‐loop AI ecosystem for nanomedicine engineering. By synergizing multimodal data harmonization, objective‐driven AI architectures, and automated high‐throughput validation, this “Design‐Make‐Test‐Analyze” (DMTA) workflow transforms traditional heuristic formulation into a predictive, self‐optimizing paradigm, accelerating ...
Meichen Dong +10 more
wiley +1 more source
A partial‐inner‐cladding optical fiber (PICOF) is developed to suppress photothermal artifacts in fluorescent fiber‐optic thermometry by isolating the sensing layer from regions prone to photothermal effects. This structural design strategy enables high‐fidelity operation at elevated excitation power, achieving high accuracy (maximum absolute error ...
Sijie Su +7 more
wiley +1 more source
A Biomimetic Solvatochromic Chip With Optimized Chemical Diversity for On‐Site Liquid Identification
A compact biomimetic photonic‐gustatory chip uses Hansen‐solubility‐parameter‐guided solvatochromic disks to create distinct color patterns in organic liquids. An optimized four‐disk array distinguishes solvent types, ratios, homologues, isomers, and alcoholic beverages. Coupled with smartphone imaging and deep learning, it identifies 80 liquid classes
Jintao Zhang +9 more
wiley +1 more source

