Results 111 to 120 of about 73,947 (261)

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate. [PDF]

Micromachines (Basel), 2023
Han Z, Li X, Wang H, Yuan J, Wang J, Wang M, Yang W, You S, Chang J, Zhang J, Hao Y.   +10 more
europepmc   +1 more source

Optical Windows for Transcranial Brain Imaging in Living Mice: Skull Thinning, Clearing, and Beyond

Advanced Science, EarlyView.
Longitudinal, noninvasive in vivo imaging is crucial for studying brain physiology. Advances in transcranial optical windows and multiphoton microscopy have improved imaging depth, but their performance often deteriorates over time. This work investigated various transcranial window approaches and found that skull regrowth limits image quality.
Yiming Fu, Gewei Yan, Zhentao She, Yingzhu He, Kangqi Liu, Jianan Qu   +5 more
wiley   +1 more source

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors. [PDF]

Micromachines (Basel), 2022
Wang H, You H, Yang J, Yang M, Wang L, Zhao H, Xie Z, Chen D.   +7 more
europepmc   +1 more source

Ultra‐Radiostable Covalent Conformationally Interlocked Networks Enabling a Universal Radiometal‐Labeling Platform for Cancer Radioembolization

Advanced Science, EarlyView.
Conjugated poly(imide dioxime)‐based microspheres establish a radiometal coordination‐driven conformational interlocked network with ultra‐high radiostability. This platform enables low‐temperature, multi‐radionuclide labeling for SPECT/PET/MRI imaging and radionuclide therapy. Mechanistic insights from EXAFS and DFT reveal enhanced stability, while in
Xiao Xu, Zhenwen Zhao, Yangjie Wang, Zhigang Liu, Zhijie Liu, Xiaoling Li, Zhichen Mao, Lu Xu, Gan Lin, Gang Liu, Hongjuan Ma   +10 more
wiley   +1 more source

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Applied Physics Express
Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes ...
Md Azizul Hasan, Matthew Alessi, Dolar Khachariya, Will Mecouch, Seiji Mita, Pramod Reddy, Kacper Sierakowski, Tomasz Sochacki, Michal Bockowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis   +12 more
doaj   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

Hardware‐Attentive Programmable Fourier Ptychography Enables Task‐Adaptive Label‐Free Virtual Staining

Advanced Science, EarlyView.
Task‐adaptive programmable optics enables label‐free virtual staining through optical‐attention‐guided acquisition and reconstruction. By optimizing wavelength, illumination angle, exposure time, and imaging depth, the framework learns task‐relevant optical measurements, generating clinically interpretable virtual stains with improved fidelity, non ...
Tianyue He, Wenyi Jing, Le Zhang, Qican Zhang, Tingdong Kou, Xin He, Yan Qiu, Yang Lu, Jian Cui, Yongfu Wen, Zhenrong Zheng, Hongying Zhang, Dayong Jin, Junfei Shen   +13 more
wiley   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source