Results 91 to 100 of about 29,698,260 (294)
Insights Into the Nature of Quantum Emitters in Electron‐Irradiated Hexagonal Boron Nitride
Advanced Science, EarlyView.Hyperspectral imaging is used to identify quantum emitters hosted by the 2D material hexagonal boron nitride. By selecting specific emission wavelengths, one can distinguish individual emitters from ensembles and gain important insights into the atomic structure of these emitters.
Mouli Hazra +12 more
wiley +1 more source
Graphene in ohmic contact for both n-GaN and p-GaN
, 2014 The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy.
Liu ZH(刘争晖) +8 more
core
Advanced Science, EarlyView.Non‐canonical amino acids (ncAAs) enhance peptide therapeutics but remain difficult to model computationally. SinCAA, a similarity‐enhanced pretraining framework, jointly optimizes contrastive learning guided by a novel conformational similarity metric with masked node reconstruction, capturing both functional relationships and chemical identity of ...
Chencheng Xu +8 more
wiley +1 more source
含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作
, 2011 提出了一种提高p-GaN/i-InGaN/n-GaN双异质结太阳能电池外量子效率的方法,即将p-GaN刻蚀成纳米阵列结构.我们使用Ni退火形成微结构掩模,通过感应耦合等离子体(ICP)将p-GaN刻蚀纳米阵列结构.同时,提出了两步刻蚀n-GaN台面的制作工艺,以此在形成p-GaN纳米阵列结构时获得光滑的n-GaN层表面,以此改善后续金属电极的沉积.经测试,含有p-GaN纳米阵列结构的电池峰值外量子效率可达55%,比常规p-GaN膜层基InGaN ...
董建荣 +5 more
core
Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering
Advanced Science, EarlyView.The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Linfeng Yu +10 more
wiley +1 more source
Revista Facultad de Ingeniería Universidad de Antioquia, 2013 A performance analysis of serial and shunt microwave switches based on p-i-n diodes of different semiconductor materials is presented. The materials analyzed are Si, GaAs, SiC, GaN, InP and GaSb. The serial type microwave switch designed with GaSb, GaAs,
Gabriela Leija Hernández +2 more
doaj +1 more source
ZrB2-based Ohmic contacts to p-GaN
Applied Surface Science, 2006 Abstract The annealing temperature dependence of contact resistance and layer stability of ZrB 2 /Ti/Au and Ni/Au/ZrB 2 /Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic ...
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) +4 more
openaire +2 more sources
Advanced Science, EarlyView.Energy‐harvesting‐integrated sensors couple ambient energy conversion with sensing, processing, and wireless communication. This review organizes recent progress through integration architectures and operating principles, revisiting co‐packaged, monolithic, and co‐functional designs together with always‐on, event‐driven, and multi‐modal sensing modes ...
Taehyun Park +5 more
wiley +1 more source
A new p-n structure ultraviolet photodetector with p(-)-GaN active region
, 2009 A new ultraviolet photodetector of employing p menus type GaN (p(-)-GaN) as the active layer is proposed. It is easy to obtain the p(-)-GaN layer with low carrier concentration.
Zhao DG (Zhao De-Gang) +2 more
core
Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance
Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq +3 more
openaire +1 more source