Results 91 to 100 of about 80,998 (291)
Surface Properties of p‐GaN and Formation of Nickel Metal Contacts
Nickel (Ni) is the key component in ohmic contacts for Mg‐doped p‐GaN, but the detailed formation mechanisms of the ohmic contact have not yet been understood.
Mikko Miettinen +12 more
doaj +1 more source
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized ...
Aniruddha Singh Kushwaha +2 more
doaj +1 more source
Nonlocomotory Robotic Strategies for Dynamic Rotation Control in Terrestrial Robots: A Review
Terrestrial robots increasingly require rapid body rotation to maintain stability and agility in complex environments. This review shows nonlocomotory rotational control strategies that operate without ground contact, including reaction wheels, tails, bars, limbs, and thrusters.
Y. Liang +14 more
wiley +1 more source
A performance analysis of serial and shunt microwave switches based on p-i-n diodes of different semiconductor materials is presented. The materials analyzed are Si, GaAs, SiC, GaN, InP and GaSb. The serial type microwave switch designed with GaSb, GaAs,
Gabriela Leija Hernández +2 more
doaj +1 more source
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi +6 more
doaj +1 more source
Enhancement of p-GaN Conductivity Using PECVD SiO[sub x]
A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF ...
Karouta, F. +3 more
openaire +1 more source
Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices.
Amirthapandian, S. +5 more
core +2 more sources
Early Radiation Therapy Response Assessment Using Multi‐Scale Photoacoustic Imaging
Tomographic and mesoscopic photoacoustics capture intratumoural features of radioresistance and response. ABSTRACT There is a critical unmet clinical need to identify biomarkers that predict and detect radiation therapy (RT) response in cancer. Using the unique capabilities of multi‐scale photoacoustic imaging (PAI) to depict tumor oxygenation and ...
Thierry L. Lefebvre +12 more
wiley +1 more source
A Central Somatic Transmission Mediates Proprioceptive Facilitation of Muscle Pain
Zhang et al. uncover a novel central mechanism for persistent muscle pain, in which TRPA1 sensitization in MeV proprioceptive neurons enhances somatic secretion. This, in turn, disinhibits descending pain control from neighboring noradrenergic locus coeruleus neurons via local GABAergic circuits, thereby promoting inflammatory muscle pain.
Xiaoyu Zhang +15 more
wiley +1 more source
Compositionally Graded Indium Gallium Nitride Solar Cells [PDF]
For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material.
Matthews, Christopher
core +2 more sources

