Results 141 to 150 of about 80,998 (291)

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source

Reinforcing Oxygen Activation of Spinel Oxide via Mn─O Covalency Engineering for VOCs Oxidation

Advanced Science, EarlyView.
A MnCo spinel catalyst with weakened Mn─O covalency was synthesized via a hard‐template method. The reduced Mn─O covalency facilitates localized electron redistribution, promoting the activation of both molecular oxygen and lattice oxygen, and thereby enabling the efficient and complete oxidation of VOCs (ethyl acetate, toluene, and propane).
Gan Li, Ruochen Zhou, Qianqian Chen, Guobo Li, Xiang Tu, Fengbo Yu, Wenming Liu, Jian Ji, Honggen Peng   +8 more
wiley   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites

Advanced Science, EarlyView.
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren, Xi Zhang, Yicheng Wang, Shuai Wang, Zhi Wang, Yumeng Li, Jikai Yang, Xin Wang, Weijun Chen, Yining Mu   +9 more
wiley   +1 more source

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Applied Physics Express
Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes ...
Md Azizul Hasan, Matthew Alessi, Dolar Khachariya, Will Mecouch, Seiji Mita, Pramod Reddy, Kacper Sierakowski, Tomasz Sochacki, Michal Bockowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis   +12 more
doaj   +1 more source

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

Advanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun, Mohammad Rezaei, Yuheng Hu, Guan‐Jun Zhang, Elison Matioli   +4 more
wiley   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2023
Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, Hao Y.   +10 more
europepmc   +1 more source

Highly Vertically Oriented Graphene Microstrip Pads With Ultrahigh Through‐Plane Thermal Conductivity and Ultralow Compressive Modulus for Efficient Heat Dissipation

Advanced Science, EarlyView.
Vertically aligned graphene microstrip pads (GMPs) break the traditional thermomechanical trade‐off in thermal interface materials. It simultaneously achieves an ultrahigh through‐plane thermal conductivity of 565.92 W m−1 K−1 and an ultralow compressive modulus below 115.16 kPa.
Xu Ran, Yaru Wang, Sijia Wu, Hejun Wang, Junhao Shen, Litao Sun, Xing Wu, Hengchang Bi   +7 more
wiley   +1 more source