Results 151 to 160 of about 29,698,260 (294)

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Applied Physics Express
Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes ...
Md Azizul Hasan, Matthew Alessi, Dolar Khachariya, Will Mecouch, Seiji Mita, Pramod Reddy, Kacper Sierakowski, Tomasz Sochacki, Michal Bockowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis   +12 more
doaj   +1 more source

Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering

Advanced Electronic Materials, EarlyView.
Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang, Zhiming Shi, Zi‐Hui Zhang, Su‐Huai Wei, Xiaojuan Sun, Dabing Li   +5 more
wiley   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

, 2009
The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current.
Zhao DG (Zhao De-Gang), Liu ZS (Liu Zong-Shun), Zhang SM (Zhang Shu-Ming), Jiang DS (Jiang De-Sheng), Zhu JJ (Zhu Jian-Jun), Liu WB (Liu Wen-Bao), Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn, Yang H (Yang Hui), Zhang S (Zhang Shuang), Wang YT (Wang Yu-Tian), Duan LH (Duan Li-Hong)   +10 more
core  

Colossal Modulation of Mechanical Resonance with temperature in single‐Crystalline SrTiO3 Microbridges Integrated on Silicon

Advanced Electronic Materials, EarlyView.
The structural characteristics and resonant mechanical behavior of suspended microbridges comprised of single‐crystalline SrTiO3 that has been grown on silicon are presented. Due to differences in thermal expansion between the SrTiO3 and silicon, we find that the resonant frequencies of the microbridges are not only enhanced, but also hyper‐sensitive ...
Deepa Guragain, Laveeza Ahmad, Alexander A. Puretzky, Carson Hester, Zheng Hui Lim, Richard Le, Sundeep Mukherjee, Ye Cao, Joseph H. Ngai   +8 more
wiley   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2023
Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, Hao Y.   +10 more
europepmc   +1 more source

Fast Homoepitaxy on (100) β‐Ga2O3 Substrates With Large Grown‐In Offcut

Advanced Electronic Materials, EarlyView.
(100) β‐Ga2O3 substrates with grown‐in offcuts eliminate grinding waste. A 13.7° offcut in the [‐c] direction produces vertical (001) sidewalls, ideal for 3D architectures. Increasing the offcut angle from 0° to 13.4° continually increases growth rate up to 30x, and step‐flow growth is maintained.
M. Brooks Tellekamp, Drew Haven, David Joyce, John Mangum, Henry Garland, Robert Lavelle, Kevin Schulte, Anna Sacchi, Matt Young, Andriy Zakutayev   +9 more
wiley   +1 more source

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]

Micromachines (Basel), 2022
Wang H, Yuan C, Xin Y, Shi Y, Zhong Y, Huang Y, Lu G.   +6 more
europepmc   +1 more source

Two‐Dimensional Carrier Gas at Diamond and Cubic Boron Nitride (111) Interface: Role of Interfacial Bonding and Defects

Advanced Electronic Materials, EarlyView.
The study identifies four bonding configurations at the (111) diamond/c‐BN interface, where B or N atoms bond with either one or three carbon atoms. C‐B bonds create two‐dimensional (2D) hole gases, while C–N bonds create electron gases. Three‐C‐bonded interfaces show three times higher carrier density than one‐C‐bonded interfaces.
Shikha Saini, Konstantin Klyukin, Mengren Bill Liu, Mark J. Polking, Bilge Yildiz   +4 more
wiley   +1 more source