Results 151 to 160 of about 73,947 (261)

Improved I_on/I_off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al_0.5GaN Etch-Stop Layer. [PDF]

Materials (Basel), 2022
Wang HC, Liu CH, Huang CR, Shih MH, Chiu HC, Kao HL, Liu X.   +6 more
europepmc   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion. [PDF]

Micromachines (Basel)
Zhai L, Li X, Ji J, Yu L, Chen L, Chen Y, Xia H, Han Z, Wang J, Jiang X, Yuan S, Zhang T, Hao Y, Zhang J.   +13 more
europepmc   +1 more source

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. [PDF]

Nanomaterials (Basel), 2021
Dai JJ, Mai TT, Wu SK, Peng JR, Liu CW, Wen HC, Chou WC, Ho HC, Wang WF.   +8 more
europepmc   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, EarlyView.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source

Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO₂ Nanosphere Mask Lithography with the Dip-Coating Method. [PDF]

Nanomaterials (Basel), 2021
Yue W, Li P, Zhou X, Wang Y, Wu J, Bai J.   +5 more
europepmc   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

Advanced Energy Materials, EarlyView.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park, Saeed Pourasad, Jinhong Mun, Arunkumar Chitteth Rajan, Tae Hyeon Park, Anand Rohit, Mohammad Zafari, Tan‐Lien Pham, Eunjae Jung, Bonseung Koo, Miran Ha, Gi Beom Sim, Hyun Gyu Park, Won Woong Choi, Kwanghyeon Jo, Soohaeng Yoo Willow, David ChangMo Yang, Chang Woo Myung, Geunsik Lee, Kwang S. Kim   +19 more
wiley   +1 more source

Reconfiguring hot-hole flux via polarity modulation of p-GaN in plasmonic Schottky architectures. [PDF]

Sci Adv
Lee H, Park Y, Nah S, Kang M, Lee M, Park JY.   +5 more
europepmc   +1 more source

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator. [PDF]

Membranes (Basel), 2021
Chiu HC, Liu CH, Huang CR, Chiu CC, Wang HC, Kao HL, Lin SY, Chien FT.   +7 more
europepmc   +1 more source