Causal‐Guided Ultra‐Long‐Term Time Series Forecasting Via Anticipated Covariates
Often treated as unknown, information from the future remains underutilized.We demonstrate that in a coupled dynamical system, providing the future state of the effect enables accurate forecasting of the cause for a long timesteps. A time series forecasting paradigm that introduces anticipated covariates to represent such known future states is ...
Jintong Zhao +4 more
wiley +1 more source
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. [PDF]
Li X +10 more
europepmc +1 more source
Optical Windows for Transcranial Brain Imaging in Living Mice: Skull Thinning, Clearing, and Beyond
Longitudinal, noninvasive in vivo imaging is crucial for studying brain physiology. Advances in transcranial optical windows and multiphoton microscopy have improved imaging depth, but their performance often deteriorates over time. This work investigated various transcranial window approaches and found that skull regrowth limits image quality.
Yiming Fu +5 more
wiley +1 more source
Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]
Wang H +6 more
europepmc +1 more source
Conjugated poly(imide dioxime)‐based microspheres establish a radiometal coordination‐driven conformational interlocked network with ultra‐high radiostability. This platform enables low‐temperature, multi‐radionuclide labeling for SPECT/PET/MRI imaging and radionuclide therapy. Mechanistic insights from EXAFS and DFT reveal enhanced stability, while in
Xiao Xu +10 more
wiley +1 more source
Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors. [PDF]
Zulkifli N'A +4 more
europepmc +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]
Wang J +5 more
europepmc +1 more source
Organic photoelectrochemical cells based on π‐conjugated semiconductors offer a versatile platform for solar fuel generation. This review outlines operating principles, device architectures, and key metrics, and highlights advances in p‐ and n‐type photoelectrodes, interfacial engineering, and catalyst integration.
Jaehyeong Kim +8 more
wiley +1 more source
Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. [PDF]
Wang R +10 more
europepmc +1 more source

