Results 51 to 60 of about 80,998 (291)

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

open access: yesCrystals, 2020
In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho   +6 more
doaj   +1 more source

Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide. [PDF]

open access: yes, 2015
The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and ...
Chen, Yu   +8 more
core   +2 more sources

Comparing the Effect of Semi‐Immersive Virtual Reality, Computerized Cognitive Training, and Traditional Rehabilitation on Cognitive Function in Multiple Sclerosis: A Randomized Clinical Trial

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Background Cognitive impairment is a common non‐motor symptom in Multiple Sclerosis (MS), negatively affecting autonomy and Quality of Life (QoL). Innovative rehabilitation strategies, such as semi‐immersive virtual reality (VR) and computerized cognitive training (CCT), may offer advantages over traditional cognitive rehabilitation (TCR ...
Maria Grazia Maggio   +8 more
wiley   +1 more source

Hot Hole Collection and Photoelectrochemical CO_2 Reduction with Plasmonic Au/p-GaN Photocathodes [PDF]

open access: yes, 2018
Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique opportunities for driving photochemical reactions at the nanoscale.
Atwater, Harry A.   +4 more
core  

Low Resistance GaN/InGaN/GaN Tunnel Junctions

open access: yes, 2013
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2.
Akyol, Fatih   +3 more
core   +1 more source

Integrating heterogeneous distributed COTS discrete-event simulation packages: An emerging standards-based approach [PDF]

open access: yes, 2006
This paper reports on the progress made toward the emergence of standards to support the integration of heterogeneous discrete-event simulations (DESs) created in specialist support tools called commercial-off-the-shelf (COTS) discrete-event simulation ...
Low, M Y H   +3 more
core   +2 more sources

Safety of Prescription Nonsteroidal Anti‐inflammatory Drugs in Adults with Inflammatory Bowel Disease: Data from a Large Administrative Claims Cohort

open access: yesArthritis Care &Research, Accepted Article.
Objectives The concern that nonsteroidal anti‐inflammatory drugs (NSAIDs) may precipitate flares of inflammatory bowel disease (IBD) has limited their use in managing musculoskeletal symptoms in this population, but safety data are mixed. Methods This retrospective cohort study included patients with IBD ≥ 18 years of age from Optum's de‐identified ...
Adam S. Mayer   +4 more
wiley   +1 more source

Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer [PDF]

open access: yes
The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates.
An, SJ, Yi, GC
core   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

open access: yesAdvanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič   +7 more
wiley   +1 more source

Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics

open access: yesIEEE Journal of the Electron Devices Society
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer.
Xinyu Sun   +11 more
doaj   +1 more source

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