Results 51 to 60 of about 73,947 (261)
Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei +5 more
openaire +2 more sources
An interface‐defect co‐engineered strategy enables bias‐programmable integration of self‐powered photodetection and low‐power synaptic functionalities within a single‐material amorphous Ga2O3 device. This design achieves reversible switching via voltage modulation, supporting high‐contrast imaging and visual memory, and demonstrates a neuromorphic ...
Wanjun Li +13 more
wiley +1 more source
The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles.
Yuhao Zhou +7 more
doaj +1 more source
Bismuth‐Based Photocatalysts for Water Remediation: Design Strategies, Mechanisms, and Challenges
This review highlights representative design strategies for bismuth‐based semiconductor photocatalysts in solar‐driven water purification. Emphasis is placed on electronic structure regulation, oxygen‐vacancy engineering, and interfacial coupling to enable efficient full‐spectrum light utilization, improved charge separation, and selective oxidation in
Shan Liu +9 more
wiley +1 more source
Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao +4 more
wiley +1 more source
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching.
Wang Yongjin, Hu Fangren, Hane Kazuhiro
doaj
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao +6 more
wiley +1 more source
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv +11 more
doaj +1 more source
This study introduces a modular microfluidic platform that connects liver cells with live microbes to mimic key aspects of the gut–liver interaction in steatosis. Using this system, both microbial metabolites and live bacteria significantly reduced fat accumulation in liver cells, but live microbes triggered inflammation and broader metabolic changes ...
Hsih‐Yin Tan +7 more
wiley +1 more source
Efficient recovery from traumatic or degenerative diseases is a great challenge, even after all the advancements in bone and cartilage regeneration. Machine learning (ML) algorithms have presented opportunities to enhance these aspects by accurately analyzing imaging data.
Maryam Kamaei +9 more
wiley +1 more source

