Results 51 to 60 of about 29,698,260 (294)
BMC Genetics, 2007 Background Giant axonal neuropathy (GAN) is a hereditary neurological disorder that affects both central and peripheral nerves. The main pathological hallmark of the disease is abnormal accumulations of intermediate filaments (IFs) in giant axons and ...
Goryunov Dmitry +4 more
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The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure
Crystals, 2020 In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho +6 more
doaj +1 more source
Transparent ZnO-Based Ohmic Contact to p-GaN [PDF]
MRS Proceedings, 2001 AbstractHighly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10-
Kaminska, E. +14 more
openaire +2 more sources
Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides
Advanced Functional Materials, EarlyView.Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla +3 more
wiley +1 more source
, 2006 C. crescentus CenR, glucose depletion .<strong>Tilt Series Date:</strong> 2006-07-06</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> < ...
Gan, Lu
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e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023 Edge termination has emerged as an important area in the design and realization of vertical GaN power electronic devices. While the material properties of GaN are promising for high-performance devices, in practice the breakdown voltage can be ...
Yu Duan +4 more
doaj +1 more source
Organic Materials of Tomorrow: Horizons of Artificial Intelligence
Advanced Materials, EarlyView.This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena +3 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.The article overviews past and current efforts on caloric materials and systems, highlighting the contributions of Ames National Laboratory to the field. Solid‐state caloric heat pumping is an innovative method that can be implemented in a wide range of cooling and heating applications.
Agata Czernuszewicz +5 more
wiley +1 more source
, 2016 Two InGaN/GaN multiple quantum well solar cells with different p-GaN layers are grown, and the effect of p-type GaN resistivity on the spectral response of the solar cells is investigated.
Jian-Jun Zhu +23 more
core +1 more source
Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
IEEE Transactions on Electron DevicesThis article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei +5 more
openaire +2 more sources