Results 31 to 40 of about 29,698,260 (294)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Optics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan   +9 more
openaire   +2 more sources

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]

, 2014
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan, Caesar, Markus, Croon, Jeroen, Kuball, Martin, Hurkx, Godefridus, Uren, Michael J, Silvestri, Marco   +6 more
core   +1 more source

Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

, 2023
International audienceIn this work, we report on the importance of layer distribution after annealing to form a high quality ohmic contact on p-type GaN, using nickel (Ni) and gold (Au) thin layer association. Both the standard GaN/Ni/Au and its reverse,
Romain Gwoziecki, Mauduit, Clément, Clément Mauduit, Arnaud Yvon, Alquier, Daniel, Matthew Charles, Charles, Matthew, Taoufik Slimani Tlemcani, Tlemcani, Taoufik Slimani, Yvon, Arnaud, Meiling Zhang, Gwoziecki, Romain, Zhang, Meiling, Vivet, Nicolas, Daniel Alquier, Nicolas Vivet   +15 more
core   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

Enhancement-mode p-GaN Comparators for power applications

2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2023
This paper presents the design of three new comparators circuits for power applications using Enhancementmode p-GaN HEMT Process Design Kit (PDK) developed by IMEC. The design challenge in this technology is the lack of P-type devices, therefore diode-connected structures with Ntype devices are introduced as pull-up devices.
Nataly Pozo, Luis-Miguel Prócel, Lionel Trojman   +2 more
openaire   +3 more sources

Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells

International Journal of Photoenergy, 2012
It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction).
Ming-Jer Jeng
doaj   +1 more source

Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]

APL Electronic Devices
In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler, W. Y. Ho, E. Farzana, S. Krishnamoorthy, J. S. Speck   +4 more
doaj   +1 more source

Zirconium Mediated Hydrogen Outdiffusion From p-GaN [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1999
We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance.
E. Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R.F. Davis, E. Goldys, K. Tomsia   +8 more
openaire   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT

Micromachines
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei   +7 more
doaj   +1 more source