Results 31 to 40 of about 80,998 (291)

Transparent ZnO-Based Ohmic Contact to p-GaN [PDF]

MRS Proceedings, 2001
AbstractHighly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10-
Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., Ochalski, T., Barcz, A., Dietl, T., Matsukura, F., Sawicki, M., Wawro, A., Zielinski, M., Jasinski, J., Liliental-Weber, Z.   +14 more
openaire   +2 more sources

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization [PDF]

, 2016
We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic ...
Fadil, Ahmed, Iida, Daisuke, Kopylov, Oleksii, Ou, Haiyan, Ou, Yiyu   +4 more
core   +1 more source

Bias-assisted photoelectrochemical etching of p-GaN at 300 K [PDF]

, 2000
Photoelectrochemical (PEC)etching of p-type GaN has been realized in room temperature, 0.1 M KOH solutions. PECetching of GaN was achieved by applying a positive bias to the surface of the p-GaN layer through a deposited titanium mask.
Borton, J. E., Cai, C., Chow, P., Morkoç, Hadis, Nathan, M. I., Van Hove, J. M., Wowchak, A.   +6 more
core   +2 more sources

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [PDF]

, 2014
Cataloged from PDF version of article.N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of ...
Demir, H. V., Hasanov, N., Ji, Y., Ju, Z. G., Kyaw, Z., Liu, W., Lu, S., Sun, X. W., Tan, S. T., Zhang, X. L., Zhang, Y., Zhang, Z. H., Zhu, B.   +12 more
core   +1 more source

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures [PDF]

, 2014
Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations.
Han-Youl Ryu
core   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells

International Journal of Photoenergy, 2012
It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction).
Ming-Jer Jeng
doaj   +1 more source

Alterations in lipid metabolism gene expression and abnormal lipid accumulation in fibroblast explants from giant axonal neuropathy patients

BMC Genetics, 2007
Background Giant axonal neuropathy (GAN) is a hereditary neurological disorder that affects both central and peripheral nerves. The main pathological hallmark of the disease is abnormal accumulations of intermediate filaments (IFs) in giant axons and ...
Goryunov Dmitry, Shu Chang, Pang Yinghua, Leung Conrad L, Liem Ronald KH   +4 more
doaj   +1 more source