Results 31 to 40 of about 73,947 (261)

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells

International Journal of Photoenergy, 2012
It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction).
Ming-Jer Jeng
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Zirconium Mediated Hydrogen Outdiffusion From p-GaN [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1999
We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance.
E. Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R.F. Davis, E. Goldys, K. Tomsia   +8 more
openaire   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT

Micromachines
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei   +7 more
doaj   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE [PDF]

APL Electronic Devices
In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky
Z. J. Biegler, W. Y. Ho, E. Farzana, S. Krishnamoorthy, J. S. Speck   +4 more
doaj   +1 more source

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Micromachines, 2020
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout).
Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung Hee Lee, Dong Seok Kim   +4 more
doaj   +1 more source

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
Edge termination has emerged as an important area in the design and realization of vertical GaN power electronic devices. While the material properties of GaN are promising for high-performance devices, in practice the breakdown voltage can be ...
Yu Duan, Jingshan Wang, Andy Xie, Zhongtao Zhu, Patrick Fay   +4 more
doaj   +1 more source

Alterations in lipid metabolism gene expression and abnormal lipid accumulation in fibroblast explants from giant axonal neuropathy patients

BMC Genetics, 2007
Background Giant axonal neuropathy (GAN) is a hereditary neurological disorder that affects both central and peripheral nerves. The main pathological hallmark of the disease is abnormal accumulations of intermediate filaments (IFs) in giant axons and ...
Goryunov Dmitry, Shu Chang, Pang Yinghua, Leung Conrad L, Liem Ronald KH   +4 more
doaj   +1 more source