Results 31 to 40 of about 18,647,368 (293)
Crystals, 2023 The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino +8 more
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Defects in p-GaN and their atomic structure [PDF]
13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004., 2004 In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a ...
Liliental-Weber, Z. +4 more
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Advanced Electronic Materials, 2015 With the development of GaN‐based optoelectronic devices, the need for p‐GaN contacts with low resistivity, good thermal stability, and high transparency or reflectivity has become more pressing. Various contact schemes to satisfy these requirements have been investigated in the past two decades.
Jingli Chen, William D. Brewer
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IEEE Journal of the Electron Devices Society, 2021 In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou +12 more
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Optics Express, 2013 The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui +9 more
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Enhancement-mode p-GaN Comparators for power applications
2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2023 This paper presents the design of three new comparators circuits for power applications using Enhancementmode p-GaN HEMT Process Design Kit (PDK) developed by IMEC. The design challenge in this technology is the lack of P-type devices, therefore diode-connected structures with Ntype devices are introduced as pull-up devices.
Nataly Pozo +2 more
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Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias
IEEE Journal of the Electron Devices Society, 2021 In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang +7 more
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Zirconium Mediated Hydrogen Outdiffusion From p-GaN [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1999 We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance.
E. Kaminska +8 more
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Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells
International Journal of Photoenergy, 2012 It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction).
Ming-Jer Jeng
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Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
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