Results 21 to 30 of about 29,698,260 (294)
Zonghan-Barry-Gan/public-axriv: 220812-Update-to-Pro-Abdulhamit-GAN-BHI
, 2022 This release is an update and discussion to Prof Abdulhamit. It use GAN to generate breast histopathology images, which will be later used as image enhancement to train models This notebook is based on Chris Deotte's notebook on 2019 using GAN for dog ...
Zonghan-Barry-Gan
core +1 more source
Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors
Nantong Daxue xuebao. Ziran kexue ban, 2021 In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj +1 more source
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
IEEE Journal of the Electron Devices Society, 2020 Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu +8 more
doaj +1 more source
The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD [PDF]
Engineering and Technology Journal, 2023 The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser ...
Haneen Jabar +3 more
doaj +1 more source
Crystals, 2023 We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET ...
Xinyi Wen +4 more
doaj +1 more source
Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
AIP Advances, 2021 We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min).
Guangnan Zhou +7 more
doaj +1 more source
Impact of various cleaning procedures on p‐GaN surfaces
Surface and Interface Analysis, 2023 This work discusses the influence of different cleaning procedures on p‐gallium nitride (GaN) grown on sapphire by metal–organic chemical vapor deposition. The cleaned p‐GaN surface was transferred into an ultrahigh vacuum chamber and studied by an X‐ray photoelectron spectrometer, revealing that a cleaning with a so‐called “piranha” procedure results ...
Schaber, J. +8 more
openaire +1 more source
Defects in p-GaN and their atomic structure [PDF]
13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004., 2004 In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a ...
Liliental-Weber, Z. +4 more
openaire +2 more sources
Advanced Electronic Materials, 2015 With the development of GaN‐based optoelectronic devices, the need for p‐GaN contacts with low resistivity, good thermal stability, and high transparency or reflectivity has become more pressing. Various contact schemes to satisfy these requirements have been investigated in the past two decades.
Jingli Chen, William D. Brewer
openaire +1 more source
Crystals, 2023 The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino +8 more
doaj +1 more source