Results 21 to 30 of about 73,947 (261)

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

Crystals, 2023
We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET ...
Xinyi Wen, Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Srabanti Chowdhury   +4 more
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Optics Express, 2013
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H., Tan, S.T., Liu W., Ju, Z., Zheng, K., Kyaw, Z., Ji, Y., Hasanov, N., Sun X.W., Demir, H. V.   +9 more
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Impact of various cleaning procedures on p‐GaN surfaces

Surface and Interface Analysis, 2023
This work discusses the influence of different cleaning procedures on p‐gallium nitride (GaN) grown on sapphire by metal–organic chemical vapor deposition. The cleaned p‐GaN surface was transferred into an ultrahigh vacuum chamber and studied by an X‐ray photoelectron spectrometer, revealing that a cleaning with a so‐called “piranha” procedure results ...
Schaber, J., Xiang, R., Arnold, A., Ryzhov, A., Teichert, J., Murcek, P., Zwartek, P., Ma, S., Michel, P.   +8 more
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Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
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Defects in p-GaN and their atomic structure [PDF]

13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004., 2004
In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a ...
Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., Jasinski, J., and O'Keefe, M.   +4 more
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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
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Ohmic Contacts on p‐GaN

Advanced Electronic Materials, 2015
With the development of GaN‐based optoelectronic devices, the need for p‐GaN contacts with low resistivity, good thermal stability, and high transparency or reflectivity has become more pressing. Various contact schemes to satisfy these requirements have been investigated in the past two decades.
Jingli Chen, William D. Brewer
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Optics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan   +9 more
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Enhancement-mode p-GaN Comparators for power applications

2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2023
This paper presents the design of three new comparators circuits for power applications using Enhancementmode p-GaN HEMT Process Design Kit (PDK) developed by IMEC. The design challenge in this technology is the lack of P-type devices, therefore diode-connected structures with Ntype devices are introduced as pull-up devices.
Nataly Pozo, Luis-Miguel Prócel, Lionel Trojman   +2 more
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