Results 21 to 30 of about 18,647,368 (293)
Biological diversity and conservation of forest ecosystems in Kyrgyzstan [PDF]
Сибирский лесной журнал, 2016 Kyrgyzstan is a natural repository of genetic resources and the diversity of species and natural laboratory, where at the small area are represented almost all altitudinal belts, ranging from semi-desert, ending with glacial-nival belt.
Sh. B. Bikirov +5 more
doaj +1 more source
Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction
, 2022 The incorporation of multiphysics stimuli with traditional sensing effects results in an approach for increasing the sensitivity of mechanical sensors, in particular strain sensing.
Nguyen, Nam-Trung +10 more
core +2 more sources
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
core +1 more source
Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors
Nantong Daxue xuebao. Ziran kexue ban, 2021 In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj +1 more source
Crystals, 2023 We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET ...
Xinyi Wen +4 more
doaj +1 more source
Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
, 2014 Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan +6 more
core +1 more source
Optics Express, 2013 This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H. +9 more
openaire +5 more sources
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core +1 more source
Impact of various cleaning procedures on p‐GaN surfaces
Surface and Interface Analysis, 2023 This work discusses the influence of different cleaning procedures on p‐gallium nitride (GaN) grown on sapphire by metal–organic chemical vapor deposition. The cleaned p‐GaN surface was transferred into an ultrahigh vacuum chamber and studied by an X‐ray photoelectron spectrometer, revealing that a cleaning with a so‐called “piranha” procedure results ...
Schaber, J. +8 more
openaire +1 more source
Zonghan-Barry-Gan/public-axriv: 220812-Update-to-Pro-Abdulhamit-GAN-BHI
, 2022 This release is an update and discussion to Prof Abdulhamit. It use GAN to generate breast histopathology images, which will be later used as image enhancement to train models This notebook is based on Chris Deotte's notebook on 2019 using GAN for dog ...
Zonghan-Barry-Gan
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