Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs [PDF]
Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
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High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization [PDF]
Fundamental ResearchImproving the hole concentration in p-GaN specimens has posed a major challenge due to the high activation energy of Mg doping in GaN. Recently, a delta doping technique for modulating the valence band and increasing the Mg ionization efficiency in GaN ...
Tao Zhang +8 more
doaj +2 more sources
The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]
MicromachinesThis work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses. It reveals that the Schottky gate structure lacks effective electrostatic charge discharge paths, which leads to the accumulation of transient charges generated by ESD stress in the ...
Yijun Shi +5 more
openaire +3 more sources
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode [PDF]
Micromachines, 2021 In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or
Tae-Hyeon Kim +3 more
doaj +2 more sources
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications [PDF]
Scientific ReportsThe continuous evolution of high-power and high-frequency electronic devices demands advanced semiconductor technologies. The proposed GaN p-FET device architecture incorporates a p-GaN source region that enables the simultaneous formation of two ...
Mohit Kumar +5 more
doaj +2 more sources
Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal [PDF]
MicromachinesA comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Jun Pan +8 more
doaj +2 more sources
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate [PDF]
MicromachinesThis work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han +9 more
doaj +2 more sources
, 2006 C. crescentus CenK, glucose depletion .<strong>Tilt Series Date:</strong> 2006-08-04</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> < ...
Gan, Lu
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Study on eye movement characteristics and intervention of basketball shooting skill [PDF]
PeerJ, 2022 Background The shooting aiming point is very important in basketball because it may affect the field goal percentage (FG%). The purpose of this study was to explore the influence of shooting aiming point practice on FG% and to search for new training ...
Qifeng Gou, Sunnan Li, Runping Wang
doaj +2 more sources
Frontiers in Materials, 2023 Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. However,
Kwang Jae Lee +7 more
doaj +1 more source