Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer [PDF]
Optics Express, 2013 This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H. +9 more
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Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs [PDF]
Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
doaj +2 more sources
The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]
MicromachinesThis work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses. It reveals that the Schottky gate structure lacks effective electrostatic charge discharge paths, which leads to the accumulation of transient charges generated by ESD stress in the ...
Yijun Shi +5 more
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Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode [PDF]
Micromachines, 2021 In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or
Tae-Hyeon Kim +3 more
doaj +2 more sources
High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization [PDF]
Fundamental ResearchImproving the hole concentration in p-GaN specimens has posed a major challenge due to the high activation energy of Mg doping in GaN. Recently, a delta doping technique for modulating the valence band and increasing the Mg ionization efficiency in GaN ...
Tao Zhang +8 more
doaj +2 more sources
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications [PDF]
Scientific ReportsThe continuous evolution of high-power and high-frequency electronic devices demands advanced semiconductor technologies. The proposed GaN p-FET device architecture incorporates a p-GaN source region that enables the simultaneous formation of two ...
Mohit Kumar +5 more
doaj +2 more sources
Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal [PDF]
MicromachinesA comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Jun Pan +8 more
doaj +2 more sources
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate [PDF]
MicromachinesThis work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han +9 more
doaj +2 more sources
, 2006 C. crescentus CenK, glucose depletion<strong>Tilt Series Date:</strong> 2006-08-04</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> < ...
Gan, Lu
core +9 more sources
Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction
, 2022 The incorporation of multiphysics stimuli with traditional sensing effects results in an approach for increasing the sensitivity of mechanical sensors, in particular strain sensing.
Nguyen, Nam-Trung +26 more
core +2 more sources