Results 11 to 20 of about 80,998 (291)

The results of introduction of Scots pine Pinus sylvestris L. in Northen Kyrgyzstan [PDF]

Сибирский лесной журнал, 2017
The forests of Northern Kyrgyzstan are distinguished by poor species composition. Severe forest growing conditions, dry climate, vertical zoning, exposition of forests to the northern slopes, while the opposite slopes are treeless created a more or less ...
A. V. Ivanov
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Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Advanced Materials Interfaces, 2023
The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology.
Bhishma Pandit, Hyeon‐Sik Jang, Yunjo Jeong, Sangmin An, S. Chandramohan, Kyung Kyu Min, Sang Min Won, Chel‐Jong Choi, Jaehee Cho, Seongin Hong, Keun Heo   +10 more
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Zirconium Mediated Hydrogen Outdiffusion From p-GaN [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1999
We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance.
E. Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R.F. Davis, E. Goldys, K. Tomsia   +8 more
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Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
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Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

AIP Advances, 2021
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min).
Guangnan Zhou, Yang Jiang, Gaiying Yang, Qing Wang, Mengya Fan, Lingli Jiang, Hongyu Yu, Guangrui Xia   +7 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies, 2021
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher   +11 more
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The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD [PDF]

Engineering and Technology Journal, 2023
The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser ...
Haneen Jabar, Makram Fakhri, Mohammed AbdulRazzaq, Subash C. B. Gopinath   +3 more
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Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

IEEE Journal of the Electron Devices Society, 2020
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang   +8 more
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High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

Crystals, 2023
We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET ...
Xinyi Wen, Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Srabanti Chowdhury   +4 more
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