Results 31 to 40 of about 3,650 (215)

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

IEEE Electron Device Letters, 2022
In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate.
M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna, A. N. Tallarico   +7 more
openaire   +2 more sources

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

IEEE Transactions on Electron Devices, 2021
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests ...
M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, B. Bakeroot, S. Decoutere, A. N. Tallarico   +6 more
openaire   +2 more sources

GAN‐LSTM‐3D: An efficient method for lung tumour 3D reconstruction enhanced by attention‐based LSTM

CAAI Transactions on Intelligence Technology, EarlyView., 2023
Abstract Three‐dimensional (3D) image reconstruction of tumours can visualise their structures with precision and high resolution. In this article, GAN‐LSTM‐3D method is proposed for 3D reconstruction of lung cancer tumours from 2D CT images. Our method consists of three phases: lung segmentation, tumour segmentation, and tumour 3D reconstruction. Lung
Lu Hong, Mohammad Hossein Modirrousta, Mohammad Hossein Nasirpour, Mohammadreza Mirshekari Chargari, Fardin Mohammadi, Seyed Vahid Moravvej, Leila Rezvanishad, Mohammadreza Rezvanishad, Ivan Bakhshayeshi, Roohallah Alizadehsani, Imran Razzak, Hamid Alinejad‐Rokny, Saeid Nahavandi   +12 more
wiley   +1 more source

T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range

Results in Physics
In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed
Min-Gi Jeong, Gökhan Atmaca, Ho-Young Cha   +2 more
doaj   +1 more source

A review on the GaN-on-Si power electronic devices

Fundamental Research, 2022
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The
Yaozong Zhong, Jinwei Zhang, Shan Wu, Lifang Jia, Xuelin Yang, Yang Liu, Yun Zhang, Qian Sun   +7 more
doaj   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs

IEEE Electron Device Letters, 2023
In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro, Zagni, Nicolo', Verzellesi, Giovanni, Cioni, Marcello, Giorgino, Giovanni, Nicotra, Maria Concetta, Castagna, Maria Eloisa, Iucolano, Ferdinando   +7 more
openaire   +2 more sources

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +2 more sources

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source