Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT [PDF]
, 2017 In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure.
Castellazzi, Alberto +2 more
core +1 more source
On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures [PDF]
, 2018 This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures.
Arvanitopoulos, Anastasios +3 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2022 A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
doaj +1 more source
Shaping Switching Waveforms in a 650 V GaN FET Bridge-Leg Using 6.7 GHz Active Gate Drivers [PDF]
, 2017 The application of active gate driving to 40 V GaN FETs has previously been shown to reduce ringing and EMI-generating spectral content in the switch-node voltage waveforms.
Dalton, Jeremy J.O. +7 more
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Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]
, 2019 GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro +3 more
core +1 more source
Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
doaj +1 more source
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
core +3 more sources
Reliability of p-GaN Gate HEMTs in Reverse Conduction
IEEE Transactions on Electron Devices, 2021 Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi +9 more
openaire +3 more sources
A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
core +1 more source
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core +2 more sources