Results 31 to 40 of about 29,909,859 (245)

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate [PDF]

, 2020
Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits.
Sangiorgi, E., Sangiorgi, E, Posthuma, Niels, Fiegna, C, Tallarico, A. N., Posthuma, N. E., Decoutere, S., Fiegna, C., Tallarico, Andrea, Bakeroot, Benoit, Decoutere, Stefaan, Decoutere S., Posthuma N. E., Sangiorgi E., Bakeroot B., Tallarico A. N., Fiegna C., A.N. Tallarico, N.E. Posthuma, E. Sangiorgi, B. Bakeroot, S. Decoutere, C. Fiegna   +22 more
core   +2 more sources

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

, 2021
We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes.
Stockman, Arno, Canato, Eleonora, Moens, Peter, Meneghesso G., Canato E., Meneghesso, Gaudenzio, Stockman A., Moens P., Meneghini, Matteo, Bakeroot B., Meneghini M., Bakeroot, Benoit, Benoit Bakeroot, Peter Moens, Matteo Meneghini, Eleonora Canato, Arno Stockman, Gaudenzio Meneghesso   +17 more
core   +1 more source

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Micromachines, 2023
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang, Jiao Nan, Zhiwen Tian, Pei Liu, Yinhe Wu, Jincheng Zhang   +5 more
doaj   +1 more source

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress.
Niels Posthuma, Marcon, D., ZANONI, ENRICO, Marleen Van Hove, Tian-Li Wu, Decoutere, S., Denis Marcon, MENEGHINI, MATTEO, MENEGHESSO, GAUDENZIO, Enrico Zanoni, Matteo Meneghini, ROSSETTO, ISABELLA, Vanessa Rizzato, Steve Stoffels, Van Hove, M., Isabella Rossetto, Stefaan Decoutere, Posthuma, N., Stoffels, S., Wu, T. L., Rizzato, V., Gaudenzio Meneghesso   +21 more
core   +1 more source

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
doaj   +1 more source

Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit

, 2022
On GaN power IC platform, the lateral p-GaN gate high-electron-mobility transistors (HEMTs) can be reconfigured as diodes in a bootstrap circuit by shorting the gate and source as the anode terminal.
Zheng, Zheyang, Cheng, Yan, Xu, Han, Zhang, Li, Chen, Kevin J., Chen, Tao, Chen, Junting   +6 more
core   +1 more source

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

, 2020
Gate reliability and reverse-bias-stress-induced VTH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an n-GaN/p-GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate ...
Chengcai Wang, Wang, Chengcai, Zheng, Zheyang, Junting Chen, Kevin J. Chen, Mengyuan Hua, Zheyang Zheng, Zhang, Li, Chen, Kevin J., Hua, Mengyuan, Li Zhang, Chen, Junting   +11 more
core   +1 more source

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
doaj   +1 more source