Results 51 to 60 of about 104,754 (247)

Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]

, 2012
The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart, Binari, Chowdhury, Chu, delAlamo, Faqir, Joh, Kim, Klein, Koley, Leach, Meneghesso, Menozzi, Mizutani, Ohki, Pei, Roff, Simms, Tan, Trew, Ťapajna, Ťapajna, Ťapajna, Ťapajna, Ťapajna   +24 more
core   +2 more sources

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems

Advanced Materials, EarlyView.
A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley   +1 more source

Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas [PDF]

, 2019
In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge
Boone, Derrick, Bruefach, Alexandra, Dowling, Karen M., Goldhaber-Gordon, David, Pop, Eric, Rojo, Miguel Muñoz, Satterthwaite, Peter F., Senesky, Debbie G., Yalamarthy, Ananth Saran   +8 more
core   +4 more sources

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

IEEE Journal of the Electron Devices Society, 2020
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu   +5 more
doaj   +1 more source

Normally-off GaN HEMTs [PDF]

, 2016
As silicon transistors have become a staple in everyday usages, other semiconductor materials (specifically III-V materials) are being researched to determine how their differing physical properties can be harnessed toward even better devices or ...
Tsai, Philip
core  

A study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectric [PDF]

, 2009
A hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature.
Chen, G, Choi, AHW, Lai, PT
core   +1 more source