Results 51 to 60 of about 29,909,859 (245)

A review on the GaN-on-Si power electronic devices

Fundamental Research, 2022
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The
Yaozong Zhong, Jinwei Zhang, Shan Wu, Lifang Jia, Xuelin Yang, Yang Liu, Yun Zhang, Qian Sun   +7 more
doaj   +1 more source

Demonstration of Electron/Hole Injections in the Gate of $p$-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance

, 2019
In this work, we demonstrated the electron/hole injections in the gate of p-GaN/AlGaN/GaN power transistors at forward gate bias by capturing the electroluminescence (EL) emission from the gate region.
Jiannong Wang, Li, Baikui, Nguyen, Nam Trung, Dimitrijev, Sima, Wang, Jiannong, Jisheng Han, Li, Hui, Nam-Trung Nguyen, Nam-Trung, Nguyen, Xi Tang, Jun Zhang, Sima Dimitrijev, Baikui Li, Han, Jisheng, Hui Li, Zhang, Jun, Tang, Xi   +16 more
core   +1 more source

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Robotics in Ionizing Radiation Environments: Vulnerabilities, Hardening, and Future Directions

Advanced Robotics Research, EarlyView.
Radiation exposure causes cumulative degradation in robotic sensors, actuators, and electronic logic, often leading to undetected failures. This study maps component vulnerabilities, evaluates hardening and shielding strategies, and identifies testing gaps that must be addressed to enable next‐generation radiation‐tolerant robotic systems.
Francis A. K. Djirackor, Josephine T. Djirackor, Amanuel Abrdo Tereda, Sun Yi, Younho Seong   +4 more
wiley   +1 more source

GAN‐LSTM‐3D: An efficient method for lung tumour 3D reconstruction enhanced by attention‐based LSTM

CAAI Transactions on Intelligence Technology, EarlyView., 2023
Abstract Three‐dimensional (3D) image reconstruction of tumours can visualise their structures with precision and high resolution. In this article, GAN‐LSTM‐3D method is proposed for 3D reconstruction of lung cancer tumours from 2D CT images. Our method consists of three phases: lung segmentation, tumour segmentation, and tumour 3D reconstruction. Lung
Lu Hong, Mohammad Hossein Modirrousta, Mohammad Hossein Nasirpour, Mohammadreza Mirshekari Chargari, Fardin Mohammadi, Seyed Vahid Moravvej, Leila Rezvanishad, Mohammadreza Rezvanishad, Ivan Bakhshayeshi, Roohallah Alizadehsani, Imran Razzak, Hamid Alinejad‐Rokny, Saeid Nahavandi   +12 more
wiley   +1 more source

Pulsed operation and performance of commercial GaN HEMTs [PDF]

, 2009
The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100–400 kHz are presented.
Morris, KA, Beach, MA, Fornetti, F
core  

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Overcoming Artificial Structures in Resolution‐Enhanced Hi‐C Data by Signal Decomposition and Multi‐Scale Attention

Advanced Science, EarlyView.
Deep‐learning‐based signal enhancement is an effective way to recover high‐resolution details from a low‐resolution chromatin contact map. However, due to computational challenges, existing methods commonly divide up the contact map into small patches and create artificial discontinuities at patch boundaries.
Qinyao Li, Kelly Yichen Li, Chiara Nicoletti, Stephen Kwok‐Wing Tsui, Pier Lorenzo Puri, Qin Cao, Kevin Y. Yip   +6 more
wiley   +1 more source

Sustainable Materials Design With Multi‐Modal Artificial Intelligence

Advanced Science, EarlyView.
Critical mineral scarcity, high embodied carbon, and persistent pollution from materials processing intensify the need for sustainable materials design. This review frames the problem as multi‐objective optimization under heterogeneous, high‐dimensional evidence and highlights multi‐modal AI as an enabling pathway.
Tianyi Xu, Tianshuo Wei, Yan Ge, Bo Peng, Yue Li, Maolin Wang, Peng Wen, Chao Yang, Ye Wei   +8 more
wiley   +1 more source