Results 51 to 60 of about 43,262 (231)

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
core   +1 more source

T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range

Results in Physics
In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed
Min-Gi Jeong, Gökhan Atmaca, Ho-Young Cha   +2 more
doaj   +1 more source

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress.
Niels Posthuma, Marcon, D., ZANONI, ENRICO, T. L., Wu, Marleen Van Hove, Tian-Li Wu, Decoutere, S., Denis Marcon, MENEGHINI, MATTEO, MENEGHESSO, GAUDENZIO, Enrico Zanoni, Matteo Meneghini, ROSSETTO, ISABELLA, Vanessa Rizzato, Steve Stoffels, Van Hove, M., Isabella Rossetto, Stefaan Decoutere, Posthuma, N., Stoffels, S., Wu, T. L., Rizzato, V., Gaudenzio Meneghesso   +22 more
core   +1 more source

A review on the GaN-on-Si power electronic devices

Fundamental Research, 2022
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The
Yaozong Zhong, Jinwei Zhang, Shan Wu, Lifang Jia, Xuelin Yang, Yang Liu, Yun Zhang, Qian Sun   +7 more
doaj   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

Development of an RF IV waveform based stress test procedure for use on GaN HFETs

, 2012
This paper reports on the development of an RF IV waveform based stress test procedure. DC and low-voltage RF characterisation was carried out before and after high power RF stress.
Tasker, Paul J., Benedikt, Johannes, McGenn, William, Uren, Michael J.   +3 more
core   +1 more source

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Demonstration of Electron/Hole Injections in the Gate of $p$-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance

, 2019
In this work, we demonstrated the electron/hole injections in the gate of p-GaN/AlGaN/GaN power transistors at forward gate bias by capturing the electroluminescence (EL) emission from the gate region.
Jiannong Wang, Li, Baikui, Nguyen, Nam Trung, Dimitrijev, Sima, Wang, Jiannong, Jisheng Han, Li, Hui, Nam-Trung Nguyen, Nam-Trung, Nguyen, Xi Tang, Jun Zhang, Sima Dimitrijev, Baikui Li, Han, Jisheng, Hui Li, Zhang, Jun, Tang, Xi   +16 more
core   +1 more source