Results 71 to 80 of about 29,909,859 (245)

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

, 2019
In this study, we propose a technique to evaluate the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs).
Stockman, Arno, Benoit Bakeroot, Peter Moens, Meneghini, Matteo, Matteo Meneghini, Bakeroot B., Meneghini M., Eleonora Canato, Canato, Eleonora, Moens, Peter, Meneghesso G., Canato E., Meneghesso, Gaudenzio, Stockman A., Moens P., Arno Stockman, Bakeroot, Benoit, Gaudenzio Meneghesso   +17 more
core   +1 more source

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

, 2020
in this work, we investigate the gate reliability of E-mode ${p-n}$ junction gate (PNJ) HEMT, which features an n GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the
Wang, Chengcai, Yang, Song, Zhang, Li, Chen, Kevin J., Hua, Mengyuan   +4 more
core   +1 more source

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

IEEE Journal of the Electron Devices Society, 2021
The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and ...
X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang   +8 more
doaj   +1 more source

Metasurface‐Based Multidimensional Light‐Field Manipulation: From Technologies to Applications

Advanced Science, EarlyView.
Multidimensional metasurfaces enable versatile manipulation of multiple optical degrees of freedom, including phase, amplitude, polarization, wavelength, and orbital angular momentum. This review summarizes their fundamental mechanisms, emerging strategies for multidimensional light‐field control, and key applications in optical computing, imaging ...
Heliang Yin, Shuo Sun, Jiahao Zhang, Jianuo Hu, Yubin Qiao, Liang Chen, Jin Li   +6 more
wiley   +1 more source

Fast Homoepitaxy on (100) β‐Ga2O3 Substrates With Large Grown‐In Offcut

Advanced Electronic Materials, EarlyView.
(100) β‐Ga2O3 substrates with grown‐in offcuts eliminate grinding waste. A 13.7° offcut in the [‐c] direction produces vertical (001) sidewalls, ideal for 3D architectures. Increasing the offcut angle from 0° to 13.4° continually increases growth rate up to 30x, and step‐flow growth is maintained.
M. Brooks Tellekamp, Drew Haven, David Joyce, John Mangum, Henry Garland, Robert Lavelle, Kevin Schulte, Anna Sacchi, Matt Young, Andriy Zakutayev   +9 more
wiley   +1 more source

Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact

, 2005
A normally off-mode AlGaN/GaN heterostructure field effect transistor (HFET) using a p-type GaN gate was fabricated and their static properties were compared with those of HFET having a Schottky gate.
Kentaro Nagamatsu, Hiroshi Amano, Yoshikazu Hirose, Norio Tsuyukuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki   +6 more
core   +1 more source

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs [PDF]

, 2020
In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs.
Matioli, Elison, Zhu, Minghua, Ma, Jun, Elison Matioli, Jun Ma, Minghua Zhu   +5 more
core   +1 more source

Farmers’ Protests in Germany: Media Coverage and Types of Bias

Agribusiness, EarlyView.
ABSTRACT The German farmers’ protests of 2024 sparked widespread media coverage and public debate. Yet, media coverage was not always positive, reflecting the media's attention‐seeking and selective focus. Occurrences of farmers blocking media outlets reflected distrust in how their concerns were portrayed.
Felix Schlichte, Doris Läpple
wiley   +1 more source

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source

DyCoDiff: Dynamic Collaborative Diffusion for Text‐Image‐Audio‐to‐Video

Advanced Intelligent Systems, EarlyView.
DyCoDiff enables text, image, and audio conditions to collaborate before temporal video generation. A multimodal condition fusion layer injects gated text‐centric fusion into the temporal branch, while collaborative losses align generated videos with semantic, visual, and dynamic audio cues for rhythm‐sensitive text‐image‐audio‐to‐video synthesis. Text‐
Youming Zhang, Wenmin Wang, Zhongheng Chen, Zhengyu Peng   +3 more
wiley   +1 more source