Results 71 to 80 of about 104,754 (247)

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

INB3P: A Multi‐Modal and Interpretable Co‐Attention Framework Integrating Property‐Aware Explanations and Memory‐Bank Contrastive Fusion for Blood–Brain Barrier Penetrating Peptide Discovery

Advanced Science, EarlyView.
INB3P is a multimodal framework for blood–brain barrier‐penetrating peptide prediction under extreme data scarcity and class imbalance. By combining physicochemical‐guided augmentation, sequence–structure co‐attention, and imbalance‐aware optimization, it improves predictive performance and interpretability.
Jingwei Lv, Qianyang Wu, Jian Liu, Binlu Yang, Yuanhao Li, Junlin Xu, Yajie Meng, Leyi Wei, Zilong Zhang, Quan Zou, Xiulai Li, Feifei Cui   +11 more
wiley   +1 more source

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications [PDF]

, 2015
A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switching
Curatola, Gilberto, Daumiller, Ingo, Haeberlen, Oliver, Huber, Martin, VERZELLESI, Giovanni   +4 more
core   +1 more source

Sustainable Materials Design With Multi‐Modal Artificial Intelligence

Advanced Science, EarlyView.
Critical mineral scarcity, high embodied carbon, and persistent pollution from materials processing intensify the need for sustainable materials design. This review frames the problem as multi‐objective optimization under heterogeneous, high‐dimensional evidence and highlights multi‐modal AI as an enabling pathway.
Tianyi Xu, Tianshuo Wei, Yan Ge, Bo Peng, Yue Li, Maolin Wang, Peng Wen, Chao Yang, Ye Wei   +8 more
wiley   +1 more source

Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells

, 2006
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the growth direction ...
Litvinov, V. I.
core   +1 more source

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
In this work, the gate current characteristics are investigated to explain the threshold voltage shift in AlGaN/GaN high electron mobility transistors (HEMTs) with a p-GaN gate. First, the intrinsic gate current conduction mechanisms are identified: in the low bias range (2.5 V < V-G < 4 V), thermionic emission (TE) dominates in the AlGaN/GaN region ...
Shun-Wei Tang, Benoit Bakeroot, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, Tian-Li Wu   +10 more
openaire   +2 more sources

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

Advanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun, Mohammad Rezaei, Yuheng Hu, Guan‐Jun Zhang, Elison Matioli   +4 more
wiley   +1 more source

Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology

Power Electronic Devices and Components, 2023
This work reports on the static and dynamic performance of the state-of-the-art 650 V ICeGaN™ (Integrated Circuit Enhancement GaN) power switch with an ON-state resistance Ron of 200 mΩ. Through the monolithic integration of a novel gate interface with a
K. Mukherjee, M. Arnold, J. Zhang, K. Ledins, M. Michalak, O. Fung, L. Efthymiou, Z. Ansari, G. Longobardi, F. Udrea   +9 more
doaj   +1 more source

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni   +2 more
core   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source