Results 91 to 100 of about 104,754 (247)

Large Language Model in Materials Science: Roles, Challenges, and Strategic Outlook

Advanced Intelligent Discovery, EarlyView.
Large language models (LLMs) are reshaping materials science. Acting as Oracle, Surrogate, Quant, and Arbiter, they now extract knowledge, predict properties, gauge risk, and steer decisions within a traceable loop. Overcoming data heterogeneity, hallucinations, and poor interpretability demands domain‐adapted models, cross‐modal data standards, and ...
Jinglan Zhang, Xinyi Chen, Xu Ye, Yulin Yang, Bin Ai   +4 more
wiley   +1 more source

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]

, 2013
Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
core   +2 more sources

VAE+DDPG: An Attention‐Enhanced Variational Autoencoder for Deep Reinforcement Learning‐Based Autonomous Navigation in Low‐Light Environments

Advanced Intelligent Systems, EarlyView.
Variational Autoencoder+Deep Deterministic Policy Gradient addresses low‐light failures of infrared depth sensing for indoor robot navigation. Stage 1 pretrains an attention‐enhanced Variational Autoencoder (Convolutional Block Attention Module+Feature Pyramid Network) to map dark depth frames to a well‐lit reconstruction, yielding a 128‐D latent code ...
Uiseok Lee, Chanhong Hwang, Hyunseok Kang, Yechan Park, Hangwoo Jin, Tuan Anh Nguyen, Eunmi Choi, Dugki Min   +7 more
wiley   +1 more source

Analytical Switching Loss Model for GaN Gate Injection Transistors

IEEE Open Journal of Power Electronics
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are increasingly adopted in highly efficient power converters. In the design and optimization of GaN-based converters, accurate analytical models with low computational effort are required ...
Ruida Zhang, Jurgen Biela
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

Transistor Switches using Active Piezoelectric Gate Barriers

, 2015
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical ...
Ajoy, Arvind, Jana, Raj K., Jena, Debdeep, Snider, Gregory   +3 more
core   +1 more source

Machine Learning‐Driven Digital Twin of a Field‐Effect Transistor‐Based Hormone Biosensor for Real‐Time Estradiol Monitoring

Advanced Intelligent Systems, EarlyView.
A machine learning‐driven digital twin simulates an aptamer‐functionalized BioFET measuring 17β‐estradiol. Real‐time Isd signals are processed, features are extracted, and trained models estimate hormone concentration. In parallel, a one‐step‐ahead forward model learns biosensor dynamics and generates realistic synthetic signals, enabling in silico ...
Anastasiia Gorelova, Alexandra Parichenko, Shirong Huang, Santiago Melia, Gianaurelio Cuniberti   +4 more
wiley   +1 more source

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study

Results in Physics
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using COMSOL
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
doaj   +1 more source

A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]

, 2006
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G., Das, J., Derluyn, J., Germain, M., Ji, H., Kuball, M., Oprins, H., Ruythooren, W., Sarua, A.   +8 more
core   +2 more sources

Retinal Vessel Segmentation: A Comprehensive Review From Classical Methods to Deep Learning Advances (1982–2025)

Advanced Intelligent Systems, EarlyView.
Four decades of retinal vessel segmentation research (1982–2025) are synthesized, spanning classical image processing, machine learning, and deep learning paradigms. A meta‐analysis of 428 studies establishes a unified taxonomy and highlights performance trends, generalization capabilities, and clinical relevance.
Avinash Bansal, Jan Kubíček, Jana Bahrová, Alice Varyšová, Martin Augustýnek, Marek Penhaker, Juraj Timkovič   +6 more
wiley   +1 more source