Results 91 to 100 of about 29,909,859 (245)

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Analytical Switching Loss Model for GaN Gate Injection Transistors

IEEE Open Journal of Power Electronics
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are increasingly adopted in highly efficient power converters. In the design and optimization of GaN-based converters, accurate analytical models with low computational effort are required ...
Ruida Zhang, Jurgen Biela
doaj   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study

Results in Physics
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using COMSOL
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
doaj   +1 more source

A Comprehensive Review of Fault‐Current Limiter Technologies for Smart and Resilient Power Systems

Energy Science &Engineering, EarlyView.
This review compares superconducting, solid‐state, and hybrid fault‐current limiters (FCLs) for modern alternating current, direct current, and hybrid grids. It shows that optimal FCL selection depends on fault characteristics, network configuration, voltage level, protection coordination, and resilience requirements rather than on a universally ...
Abdelrahman Farghly, Eslam Essam, Hilmy Awad, Samia Abdelfatah, Walid Issa, Abdallah M. Hamada   +5 more
wiley   +1 more source

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

, 2019
We investigated the threshold voltage (V TH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the V TH first positively shifted and then decreased.
Li, Baikui, Nguyen, Nam Trung, Dimitrijev, Sima, Han, Jisheng, Wang, Jiannong, Li, Hui, Moghadam, Hamid Amini, Zhang, Zhaofu, Nam-Trung, Nguyen, Amini Moghadam, Hamid, https://orcid.org/, Tang, Xi   +11 more
core   +2 more sources

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
Industries including energy production, automotive and aerospace has seen a tremendous increase in interest in high temperature electronics. There has been a lot of investigations done on wide bandgap materials because of the difficulties traditional ...
J. Ajayan, Vakkalakula Bharath Sreenivasulu, N. Aruna Kumari, S. Sreejith, Subhajit Das   +4 more
doaj   +1 more source

Autonomous Nanomedicine: Closing the Biological Validation Gap

Exploration, EarlyView.
Delivery of nanoparticles to tumors has not improved in over fifteen years, and biological testing remains slow and separate from formulation design. This review proposes adding a Biology step to the design cycle, using organ chips and patient‐derived organoids, and assesses the readiness of each required technology.
Yan Jun Lin, Izabella Komperda
wiley   +1 more source

Recent advances in flexible optoelectronic synapses: Mechanisms, materials, and neuromorphic applications

FlexMat, EarlyView.
Flexible optoelectronic synapses integrate sensing, memory, and computation within mechanically compliant devices. This review summarizes their neuromorphic mechanisms and recent advances in diverse material platforms, emphasizing stability challenges under coupled optical, electrical, mechanical, and environmental stresses.
Yingjie Li, Yuyi Feng, Daquan Yang, Wenqiang Yang, Rui Su, Meicheng Li, Caofeng Pan   +6 more
wiley   +1 more source

Quasi‐2D perovskite memristors: From layered structures to advanced computing applications

InfoScience, EarlyView.
Quasi‐2D perovskites enable stable memristive switching through dimensional engineering that controls ion migration pathways. The layered structure suppresses leakage, improves environmental stability, and enables analog conductance modulation for neuromorphic computing, artificial vision, and in‐memory architectures, transforming ion migration from a ...
Jie Ma, Yujian Du, Yuljae Cho
wiley   +1 more source