Results 111 to 120 of about 43,262 (231)

An Innovative Approach to Multi‐Valued Logic

IEEJ Transactions on Electrical and Electronic Engineering, EarlyView.
The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance [PDF]

, 2004
The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Wang, Y, Hemment, P L F, E. Gili, Hall, S, D.C. Donaghy, Uchino, T, Donaghy, D C, V.D. Kunz, C.H. de Groot, P.L.F. Hemment, Ashburn, P, T. Uchino, S. Hall, Gili, E, de Groot, C H, Y. Wang, P. Ashburn, Kunz, V D   +17 more
core   +1 more source

-GaN Gate Double-Channel GaN HEMT

, 2023
Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen, Zheng, Zheyang, Junting Chen, Mengyuan Hua, Chen, Tao, Hua, Mengyuan, Liao, Hang, Chen, Junting, Hang Liao, Cheng, Yan, Kevin J. Chen, Zheyang Zheng, Feng, Sirui, Chen, Kevin J., Sirui Feng, Yan Cheng   +15 more
core   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Harvesting benefits: Exploring the effects of second‐best policies on enhancing soil organic carbon stocks in agriculture

American Journal of Agricultural Economics, EarlyView.
Abstract Agricultural subsidies can be an effective policy tool to enhance soil organic carbon sequestration. This paper assesses the effectiveness of a second‐best hypothetical policy which subsidizes additional canola hectares optimally for each soil zone in Saskatchewan in an effort to increase soil organic carbon.
Devin A. Serfas
wiley   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Charge injection in normally-off p-GaN gate AlGaN/GaN-on-Si HFETs

, 2018
We present an experimental and theoretical investigation aimed at a full understanding of the main charge injection mechanisms involved in enhancement-mode p-GaN gate AlGaN/GaN-on-Si HFETs: Substrate leakage in the off state for large drain-to-source ...
Luca Savadi, Haberlen, Oliver, Curatola, Gilberto, Fiori, Gianluca, Gilberto Curatola, Iannaccone, Giuseppe, Savadi, Luca, Giuseppe Iannaccone, Sebastien Sicre, Lavanza, Simone, Gianluca Fiori, Simone Lavanza, Sicre, Sebastien, Oliver Haberlen   +13 more
core   +1 more source

Cancer pain: current practice and emerging targets

British Journal of Pharmacology, EarlyView.
Cancer pain (CP) arises from a complex interplay between the tumour and its microenvironment. Many patients experience a mixed pain phenotype that encompasses nociceptive, neuropathic and neuroinflammatory mechanisms, and vary across tumour type and disease stage. Despite decades of intensive research, the mainstay of cancer pain treatment is still non‐
Yi Ye, Marcin Chwistek, Zhiting Gong, Vanessa Uzonwanne, Xiaojie Shi, Arpad Szallasi   +5 more
wiley   +1 more source

Textile and colour defect detection using deep learning methods

Coloration Technology, EarlyView.
Abstract Recent advances in deep learning (DL) have significantly enhanced the detection of textile and colour defects. This review focuses specifically on the application of DL‐based methods for defect detection in textile and coloration processes, with an emphasis on object detection and related computer vision (CV) tasks.
Hao Cui, Abdel‐Fattah Seyam, Renzo Shamey   +2 more
wiley   +1 more source