Results 111 to 120 of about 104,754 (247)

Bioinformatics‐Driven Design and Evaluation of Recombinant Multi‐Epitope Immunogens Derived From Snake Venom Toxins as Potential Antivenom Candidates

Proteins: Structure, Function, and Bioinformatics, EarlyView.
ABSTRACT Snakebite envenomation is a major public health concern, particularly in low‐ and middle‐income regions where access to safe and effective antivenoms is limited. Traditional antivenoms, derived from immunization with crude venom, often trigger adverse reactions and lack specificity against key venom components.
Hanan Maoz, Amir Elalouf
wiley   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Survey on AI‐Enabled Computer Vision Technologies and Applications for Space Robotic Missions

Journal of Field Robotics, EarlyView.
ABSTRACT This survey provides a comprehensive overview of recent advancements and challenges in Artificial Intelligence (AI)‐enabled computer vision (CV) techniques for space robotic missions, spanning critical phases such as Entry, Descent, and Landing (EDL), orbital operations, and planetary surface exploration.
Maciej Quoos, Steven Kay, Julia Wajoras, Robert Field, Evridiki V. Ntagiou, Fakher Mohammad, Yang Gao   +6 more
wiley   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors

, 2019
The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization.
Bagnall, Kevin R., Englund, Dirk R., Foy, Christopher, Trusheim, Matthew E., Walsh, Michael, Wang, Evelyn N., Zhang, Lenan   +6 more
core   +1 more source

NiPS3/GaN photodetector with bias‐selected photoresponse mode for reconfigurable optoelectronic logic and neuromorphic vision

Responsive Materials, EarlyView.
This work presents a NiPS3/GaN photodetector with a broadband response from ultraviolet to visible light. Its performance, enabled by dynamically tuning the competition between photothermoelectric, photovoltaic, and photoconductive effects, facilitates applications in imaging, optoelectronic synapses, and reconfigurable logic gates.
Bingjie Ye, Chunshuang Chu, Shunjie Yu, Xinyi Shan, Jian Guo, Jun‐Ge Liang, Francis Chi‐Chung Ling, Guofeng Yang   +7 more
wiley   +1 more source

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

, 2017
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想), Li, Xingxin, Luo, Muchang, Qin, Hua(秦华), Sun, Jiandong(孙建东), Sun, Yunfei(孙云飞), Yu, Yao, Zhang, Zhipeng(张志鹏), 孙建东, 秦华   +9 more
core   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate

Applied Physics Express
We demonstrate that exposure to positive gate bias can favor a fast recovery of the threshold voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors. Two process splits were investigated, having different Schottky
D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini   +9 more
doaj   +1 more source