Results 111 to 120 of about 3,650 (215)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

PlantGFM: A Genomic Foundation Model for Discovery and Creation of Plant Genes

Advanced Science, Volume 13, Issue 46, 17 August 2026.
A plant genomic foundation model pre‐trained on 12 species enables both accurate gene prediction and de novo gene design. Through AI‐human knowledge screening, seven designed sequences showed transcriptional activity in plants, with two expressing stable proteins—demonstrating the first DNA‐RNA‐protein expression of LLM‐generated genes in plants and ...
Changhao Li, Qizhe Zhang, Hanchen Chen, Kepeng Lin, Chengfang Luo, Mengying Yang, Wei Xu, Fan Yao, Jianbing Yan, Qing‐Yong Yang, Xuehai Hu   +10 more
wiley   +1 more source

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

IEEE Journal of the Electron Devices Society
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu, Jiayin He, Hongjie Peng, Ju Gao, Wenbo Xia, Chengkang Ao, Jinyan Wang, Maojun Wang, Jin Wei, Yong Xie   +9 more
doaj   +1 more source

How Advanced Artificial Intelligence Technologies Shape Drug–Drug and Drug–Target Interaction Modeling

Advanced Science, Volume 13, Issue 44, 7 August 2026.
This review explores the convergence of artificial intelligence technologies in modeling drug–drug and drug–target interactions. By evaluating advanced feature engineering, architectural innovations, and learning paradigms reveals shared evolutionary trends and critical challenges, such as cold‐start settings and shortcut learning.
Xin Sun, Tong Wang
wiley   +1 more source

Deep Learning‐Assisted Design of Mechanical Metamaterials

Advanced Intelligent Discovery, Volume 2, Issue 4, August 2026.
This review examines the role of data‐driven deep learning methodologies in advancing mechanical metamaterial design, focusing on the specific methodologies, applications, challenges, and outlooks of this field. Mechanical metamaterials (MMs), characterized by their extraordinary mechanical behaviors derived from architected microstructures, have ...
Zisheng Zong, Pu Wen, Zhiping Chai, Dunxuan Wu, Han Ding, Zhigang Wu   +5 more
wiley   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source

Large Language Model in Materials Science: Roles, Challenges, and Strategic Outlook

Advanced Intelligent Discovery, Volume 2, Issue 4, August 2026.
Large language models (LLMs) are reshaping materials science. Acting as Oracle, Surrogate, Quant, and Arbiter, they now extract knowledge, predict properties, gauge risk, and steer decisions within a traceable loop. Overcoming data heterogeneity, hallucinations, and poor interpretability demands domain‐adapted models, cross‐modal data standards, and ...
Jinglan Zhang, Xinyi Chen, Xu Ye, Yulin Yang, Bin Ai   +4 more
wiley   +1 more source

Unraveling Spatiotemporal Heterogeneity and Driving Mechanism of Vegetation Recovery in Co‐Seismic Landslide Areas via Nonlinear Trajectories and Bayesian Networks

Ecology and Evolution, Volume 16, Issue 8, August 2026.
We developed an integrated GAM–Bayesian framework to diagnose the nonlinear recovery dynamics of vegetation in landslide‐affected areas. Our model reveals that most sites reached a key recovery inflection point within 5–7 years, with faster recovery occurring under warm, moist, and moderate light conditions.
Mingxuan Wan, Wei Zhao, Jiujiang Wu, Yanqing Yang, Junli Zhao   +4 more
wiley   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

A Lightweight and Erudite Automated BiLSTM‐Based Multi‐Cycle GAN for Retinal Blood Vessel and Optic Disc Segmentation in Fundus Images

Engineering Reports, Volume 8, Issue 8, August 2026.
This graphical abstract presents a lightweight and automated BiLSTM‐based Multi‐Cycle GAN framework for retinal blood vessel and optic disc segmentation in fundus images. Initially, fundus images undergo preprocessing, including green channel extraction, denoising, resizing, and dataset splitting.
Rasmita Kumari Mohanty, Amaravarapu Pramod Kumar, Yuvaraju Macha, Agraharam Siva Kumar, J. Srinivas, G. Shyama Chandra Prasad, Rajesh Kumar Verma, Shashi Kant   +7 more
wiley   +1 more source