Results 111 to 120 of about 29,909,859 (245)
Automatic insect identification, counting, and monitoring techniques: a review
Pest Management Science, EarlyView.Automated insect monitoring increasingly integrates optical, acoustic, infrared, radar, electrostatic, and biosensing technologies with artificial intelligence. No single approach is universally optimal; reliable deployment depends on task‐specific validation, representative datasets, robustness under field conditions, energy autonomy, connectivity ...
Mariano González García +3 more
wiley +1 more source
Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress
The gate-side HBM (human body model) ESD robustness of Schottky-type p-GaN gate HEMTs is investigated. The maximum reverse gate current and gate breakdown voltage in the quasi-static I-V tests are higher than the forward cases, whereas the forward gate ...
Zheng, Zheyang +3 more
core +1 more source
Phytotherapy Research, EarlyView.This review summarizes how natural products, mainly including flavonoids, terpenoids, alkaloids, and polyphenols alleviate RA via PI3K/Akt pathway, regulating inflammation, proliferation, apoptosis, angiogenesis, and osteoclast differentiation. The figure was created by Figdraw (https://www.figdraw.com/#/).
Haishuo Ren +10 more
wiley +1 more source
Phytotherapy Research, EarlyView.Schematic overview of the in vitro and in vivo evaluation of purpurin in promoting MK maturation and platelet production, through ESR1/PI3K/AKT. ABSTRACT Chemotherapy‐induced thrombocytopenia (CIT) increases bleeding risk and compromises chemotherapy delivery.
Xiaolin Gan +12 more
wiley +1 more source
Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. [PDF]
Micromachines (Basel), 2022 Wang R +10 more
europepmc +1 more source
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
2024 IEEE International Reliability Physics Symposium (IRPS)In this work, a random telegraph noise (RTN) analysis has been carried out, to the best of our knowledge, for the first time to characterize the defects activated by forward-biased gate stress in GaN-HEMTs with metal/pGaN Schottky gate. The RTN signal has been measured for both gate leakage (IG) and drain current (ID), after each stress phase until the
Millesimo M. +7 more
openaire +2 more sources
From accidents to assets—The value pathways of patents for serendipitous inventions
Strategic Management Journal, EarlyView.Abstract Research Summary Firms often celebrate accidental inventions that lead to major breakthroughs, yet little is known about how the value of serendipitous inventions materializes. Using data from 8530 patented inventions across 23 countries, our research shows that these inventions differ from planned R&D outcomes.
Christoph Grimpe +3 more
wiley +1 more source
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode. [PDF]
Micromachines (Basel), 2021 Kim TH, Jang WH, Yim JH, Cha HY.
europepmc +1 more source
Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance
Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq +3 more
openaire +1 more source
Strategy as a theory of change
Strategic Management Journal, EarlyView.Abstract Research Summary The theory‐based view argues that a strategist's task is to develop a theory to move the organization to an improved future state. Focusing on theorizing as a thought process of model creation, we propose a framework to specify hypothetical causal links and analyze their structure as a directed graph connecting inputs ...
Sergio G. Lazzarini +2 more
wiley +1 more source