Results 131 to 140 of about 43,262 (231)
E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology. [PDF]
Micromachines (Basel), 2021 Jia LF +7 more
europepmc +1 more source
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
2024 IEEE International Reliability Physics Symposium (IRPS)In this work, a random telegraph noise (RTN) analysis has been carried out, to the best of our knowledge, for the first time to characterize the defects activated by forward-biased gate stress in GaN-HEMTs with metal/pGaN Schottky gate. The RTN signal has been measured for both gate leakage (IG) and drain current (ID), after each stress phase until the
Millesimo M. +7 more
openaire +1 more source
Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs.
Matioli, Elison, Zhu, Minghua, Ma, Jun
core +1 more source
Advanced Sensor Research, Volume 5, Issue 7, July 2026.Breathomics is established as a non‐invasive diagnostic strategy by combining volatile organic compound biomarkers, nanomaterial‐based sensor arrays, and AI‐driven classification. Key diseases, sensing materials, and analytical challenges are critically compared, revealing how portable, data‐enabled breath platforms are moving toward clinically useful ...
Anesu Nyabadza +3 more
wiley +1 more source
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. [PDF]
Micromachines (Basel), 2021 Huang YC +6 more
europepmc +1 more source
Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance
Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq +3 more
openaire +1 more source
Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress
The gate-side HBM (human body model) ESD robustness of Schottky-type p-GaN gate HEMTs is investigated. The maximum reverse gate current and gate breakdown voltage in the quasi-static I-V tests are higher than the forward cases, whereas the forward gate ...
Zheng, Zheyang +3 more
core +1 more source
Engineered Metal–Organic Frameworks‐Based Materials for Environmental Detection
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 4, July 2026.Engineered metal–organic frameworks (MOFs) regulated by various material modification strategies are discussed for environmental contaminant detection under different sensing mechanisms, providing future improvements of MOFs in environmental detection. Sensitive and selective detection of contaminants is crucial for environmental protection.
Pan Gao +3 more
wiley +1 more source
Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
, 2019 Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction (between gate electrode and the p-GaN layer) and a p-GaN ...
Chen, Wenjie +10 more
core +1 more source
International Journal of Imaging Systems and Technology, Volume 36, Issue 4, July 2026.ABSTRACT Gliomas are aggressive brain tumors that require accurate imaging‐based diagnosis, where automated segmentation plays a central role in assessing tumor morphology and guiding treatment decisions. Manual delineation of gliomas is time‐consuming and prone to variability, motivating the use of deep learning to improve consistency and alleviate ...
Cecilia Diana‐Albelda +4 more
wiley +1 more source