Results 131 to 140 of about 104,754 (247)
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. [PDF]
Micromachines (Basel), 2021 Huang YC +6 more
europepmc +1 more source
Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor
, 2005 We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2 ...
Ahmadian, Y. +7 more
core +1 more source
Textile and colour defect detection using deep learning methods
Coloration Technology, EarlyView.Abstract Recent advances in deep learning (DL) have significantly enhanced the detection of textile and colour defects. This review focuses specifically on the application of DL‐based methods for defect detection in textile and coloration processes, with an emphasis on object detection and related computer vision (CV) tasks.
Hao Cui +2 more
wiley +1 more source
JCMS: Journal of Common Market Studies, EarlyView.Abstract Disinformation has become a contentious issue within the European Union (EU) and in transatlantic relations, raising fundamental questions about how democratic societies should regulate online content. This article investigates how competing democratic visions shape European Parliamentary debates on the Digital Services Act (DSA).
Linus Wahlberg, Sara Wissén
wiley +1 more source
Radical dystopia: The comic modernism of George Orwell's Nineteen Eighty‐Four
Orbis Litterarum, EarlyView.Abstract The present essay turns the received view of George Orwell's Nineteen Eighty‐Four on its head, arguing that Orwell's dystopian classic mobilizes the modernist techniques of T. S. Eliot's The Waste Land to lampoon the ideological fatalism of Eliot and other cultural conservatives.
Magnus Ullén
wiley +1 more source
Electroluminescence from a Schottky-type p-GaN gate structure [PDF]
Journal of Shenzhen University Science and Engineering, 2021 Ran QIU, Yuhan LIU, Baikui LI
openaire +1 more source
Plant Biotechnology Journal, EarlyView.ABSTRACT Genomic selection (GS) is critical for accelerating genetic gain in modern plant breeding. Deep learning approaches offer powerful non‐linear representation capabilities for modelling non‐additive effects. However, their application in GS remains restricted, as high‐dimensional, low‐sample and noisy data hinder the identification of ...
Yuexin Ma +7 more
wiley +1 more source
MicromachinesA comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Jun Pan +8 more
doaj +1 more source
In Vivo Imaging With a Low‐Cost MRI Scanner and Cloud Data Processing in Low‐Resource Settings
NMR in Biomedicine, Volume 39, Issue 6, June 2026.This study presented the system evolution at MUST: (a) Scanner after the initial assembly in 2023. (b) First reconstructed image (bell pepper). Front (c), rear (d), and global (e) views of the MUST scanner in the 2025 configuration, highlighting the improved electronics setup, RF coils, and mechanical integration.
Teresa Guallart‐Naval +18 more
wiley +1 more source
Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance
Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq +3 more
openaire +1 more source