Results 131 to 140 of about 3,650 (215)

Textile and colour defect detection using deep learning methods

Coloration Technology, Volume 142, Issue 4, Page 481-501, August 2026.
Abstract Recent advances in deep learning (DL) have significantly enhanced the detection of textile and colour defects. This review focuses specifically on the application of DL‐based methods for defect detection in textile and coloration processes, with an emphasis on object detection and related computer vision (CV) tasks.
Hao Cui, Abdel‐Fattah Seyam, Renzo Shamey   +2 more
wiley   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure. [PDF]

Micromachines (Basel)
Liu AC, Huang YW, Chen HC, Kuo HC.
europepmc   +1 more source

Growth of p-GaN layers over tri-gate

Report on development of growth techniques of pGaN over trigate structures for normally off behaviour ...
openaire   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Design and validation of a deep learning GAN for predicting ¹ ⁷ ⁷Lu dose voxel kernels using GATE/GEANT4 Monte Carlo and IDAC-Dose 2.1 in phantom dosimetry. [PDF]

J Appl Clin Med Phys
Kapis OE, Kaniu MI, Giuseppe I, Angeyo HK.   +3 more
europepmc   +1 more source

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]

ACS Omega
Chen HC, Liu AC, Lin CH, Chou SY, Chang TC, Kao TS, Kuo HC.   +6 more
europepmc   +1 more source

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]

Sensors (Basel)
Moscotin M, Jorudas J, Prystawko P, Saniuk M, Kovalevskij V, Kašalynas I.   +5 more
europepmc   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source