Results 141 to 150 of about 43,262 (231)

Methane emissions from canals draining tropical peatlands: Constraining temporal variability and emissions pathways

Limnology and Oceanography Letters, Volume 11, Issue 4, July 2026.
Abstract Drainage canals are potential hotspots of methane (CH4) emissions from degraded peatlands in Southeast Asia. Estimates of CH4 emissions from these canals remain scarce, and both the temporal variability and pathways of CH4 emissions are uncertain.
Clarice R. Perryman, Jennifer C. Bowen, Desi Silviani Putri Aulian Barry, Erin Dayanti, Yulita Andriyani, Ruby L. Gates, Nisa Novita, Gusti Z. Anshari, Alison M. Hoyt   +8 more
wiley   +1 more source

Machine‐learning prediction of affinity and epistasis in the bovine pancreatic trypsin inhibitor–chymotrypsin complex

Protein Science, Volume 35, Issue 7, July 2026.
Abstract Protein–protein interactions (PPIs) are shaped by evolutionary pressures that fine‐tune binding affinities and drive the epistatic relationships that support functional outcomes. Here, we used the complex of bovine pancreatic trypsin inhibitor (BPTI) and chymotrypsin as a model system to study how mutations at one or two positions affect ...
Noam Tzuri, Itamar Kass, Yaron Orenstein, Niv Papo   +3 more
wiley   +1 more source

Bioinformatics‐Driven Design and Evaluation of Recombinant Multi‐Epitope Immunogens Derived From Snake Venom Toxins as Potential Antivenom Candidates

Proteins: Structure, Function, and Bioinformatics, Volume 94, Issue 7, Page 1403-1426, July 2026.
ABSTRACT Snakebite envenomation is a major public health concern, particularly in low‐ and middle‐income regions where access to safe and effective antivenoms is limited. Traditional antivenoms, derived from immunization with crude venom, often trigger adverse reactions and lack specificity against key venom components.
Hanan Maoz, Amir Elalouf
wiley   +1 more source

Record Index–Bandgap Trade‐Off: CdPS3 as a High‐Index van der Waals Platform for Ultraviolet–Visible Nanophotonics

Nanophotonics, Volume 15, Issue 11, 13 June 2026.
The fundamental index–bandgap trade‐off strictly limits materials for short‐wavelength nanophotonics. The van der Waals crystal CdPS3 emerges as a compelling alternative platform challenging this paradigm. Combining an exceptionally high refractive index approaching 3 with a broad mid‐infrared‐to‐ultraviolet transparency window, CdPS3 unlocks new ...
Maksim R. Povolotskiy, Aleksandr S. Slavich, Georgy A. Ermolaev, Dmitriy V. Grudinin, Nikolay V. Pak, Ilya A. Zavidovskiy, Konstantin V. Kravtsov, Anton A. Minnekhanov, Mikhail K. Tatmyshevskiy, Alexander V. Syuy, Dmitry I. Yakubovsky, Arslan Mazitov, Liudmila A. Klimova, Adilet N. Toksumakov, Alexander V. Melentev, Elena Zhukova, Davit A. Ghazaryan, Gleb Tselikov, Ivan Kruglov, Sergey M. Novikov, Andrey A. Vyshnevyy, Aleksey V. Arsenin, Kostya S. Novoselov, Valentyn S. Volkov   +23 more
wiley   +1 more source

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi, Ethan White, Qinghui Shao, Bikramjit Chatterjee, Clint D. Frye, Dylan M. Evans, Mohamadali Malakoutian, Srabanti Chowdhury, Lars Voss, Shaloo Rakheja   +9 more
wiley   +1 more source

Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

, 2004
Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core   +1 more source

Enhancement-mode AlN/GaN/AlN XHEMTs

Applied Physics Express
We observe a 2D hole gas at room temperature in an as-grown, undoped 10 nm coherently strained GaN layer within an AlN/GaN/AlN heterostructure grown on bulk AlN by MBE. Analogous to the inversion channel in silicon MOSFETs, we grow n ^++ GaN source/drain
Yu-Hsin Chen, Kazuki Nomoto, Reet Chaudhuri, Jimy Encomendero, Shivali Agrawal, Eungkyun Kim, Jeongwoo Kim, Siyuan Ma, Huili Grace Xing, Debdeep Jena   +9 more
doaj   +1 more source

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

, 2018
An increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper.
Tanner, Philip, Li, Baikui, Dimitrijev, Sima, Wang, Jiannong, Han, Jisheng, Han, Ji-Sheng, Li, Hui, Moghadam, Hamid Amini, Amini Moghadam, Hamid, https://orcid.org/, Tang, Xi   +10 more
core   +1 more source

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

IEEE Journal of the Electron Devices Society
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu, Jiayin He, Hongjie Peng, Ju Gao, Wenbo Xia, Chengkang Ao, Jinyan Wang, Maojun Wang, Jin Wei, Yong Xie   +9 more
doaj   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source