Results 141 to 150 of about 3,650 (215)

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]

Sci Rep
Dub M, Sai P, Yavorskiy D, Ivonyak Y, Seweryn A, Godlewski M, Prystawko P, Kucharski R, Cywiński G, Knap W, Rumyantsev S.   +10 more
europepmc   +1 more source

Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]

Light Sci Appl
Chu C, Jiang Y, He C, Li W, Tian K, Zhang Y, Sun X, Zhang ZH.   +7 more
europepmc   +1 more source

4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]

Micromachines (Basel)
Chen C, Liu Y, Zhou X, Li P, Zhang Y, Yang B, Yang Z, Bai J.   +7 more
europepmc   +1 more source

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source

Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]

Micromachines (Basel)
Prio MH, Morshed M, Muthusamy L, Raju MSEH, Towfeeq I, Gajula D, Koley G.   +6 more
europepmc   +1 more source