Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
ACS OmegaOmar A, Loan SA.
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Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
Micromachines (Basel)Prio MH +6 more
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The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]
Micromachines (Basel)Shi Y +5 more
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Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
ACS OmegaQureshi B, Alharbi AG, Ayub R, Loan SA.
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The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]
Micromachines (Basel)Shen Z +10 more
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Materials (Basel)Weis M.
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Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Micromachines (Basel)Won YH +6 more
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Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]
Micromachines (Basel)Chuang YT, Tumilty N.
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Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]
Micromachines (Basel)Li S +13 more
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Native GaN/GaO<sub>x</sub> Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors. [PDF]
Research (Wash D C)Liang J +7 more
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