Results 161 to 170 of about 3,650 (215)

Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs

Microelectronic Engineering
S. Milazzo, G. Greco, G. Giorgino, C. Miccoli, S. Mirabella, F. Iucolano, F. Roccaforte   +6 more
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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]

Micromachines (Basel)
Baca-Arroyo R.
europepmc   +1 more source

Image super-resolution method using a generative adversarial network incorporating attention and residual density. [PDF]

Sci Rep
Zhang Q, Hang Y, Zhang H, Lu X, Qiu J.
europepmc   +1 more source

MedGAN-SSM: Multimodal brain image synthesis network integration using SSM empowered GAN. [PDF]

iScience
Song T, Wang M, Ren Z, Li W, Zhang J, Li K.   +5 more
europepmc   +1 more source

Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]

Micromachines (Basel)
Wang Y, Wang J, Dong Z, Tian P, Liu Y, Zhai J, Hu W.   +6 more
europepmc   +1 more source

Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]

Micromachines (Basel)
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc   +1 more source

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Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors

IEEE Electron Device Letters, 2019
The gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under a gate bias, combined with electroluminescence imaging and pulsed measurements. For gate stress ( ${V} _{\text {Gstress}}$ ) from 0 to 13 V, the drain current is found to be stable and decreases
Carlo de Santi, Enrico Zanoni, Dunjun Chen   +2 more
exaly   +4 more sources

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

IEEE Transactions on Electron Devices, 2019
In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico, S. Stoffels, N. Posthuma, B. Bakeroot, S. Decoutere, E. Sangiorgi, C. Fiegna   +6 more
openaire   +2 more sources