Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication. [PDF]
Yin Y, Fan Q, Ni X, Guo C, Gu X.
europepmc +1 more source
Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure. [PDF]
Liu AC, Huang YW, Chen HC, Kuo HC.
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Growth of p-GaN layers over tri-gate
Report on development of growth techniques of pGaN over trigate structures for normally off behaviour ...
openaire +1 more source
Pulsed operation and performance of commercial GaN HEMTs [PDF]
Beach, MA, Fornetti, F, Morris, KA
core
Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc +1 more source
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]
Lee KH, Yang Y, Heo J, Kim JH.
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Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]
Dub M +10 more
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Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]
Chu C +7 more
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Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]
Xiang Y +12 more
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Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
Kim DW +10 more
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