Results 161 to 170 of about 29,909,859 (245)

Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current

, 2012
We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10~(17) A/mm at V_(GS)= 0 V and V_(DS) = 5 V.The threshold voltage is ...
Gu GD(顾国栋), Cai Y(蔡勇), Feng ZH(冯志红), Zhang BS(张宝顺), Liu B(刘波), Yu GH(于国浩), Dong ZH(董志华), Ceng CH(曾春红)   +7 more
core  

Growth of p-GaN layers over tri-gate

Report on development of growth techniques of pGaN over trigate structures for normally off behaviour ...
openaire   +1 more source

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma. [PDF]

Micromachines (Basel)
Zhang P, Li DY, Xu JR, Chang QY, Hou B, Xi H, Ma XH.   +6 more
europepmc   +1 more source

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry. [PDF]

Sci Adv
Yu J, Li T, Lao Y, Yang J, Cui J, Liu S, Yang H, Yin Y, Wang M, Yang X, Chen KJ, Shen B, Wei J.   +12 more
europepmc   +1 more source

Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse. [PDF]

Micromachines (Basel)
Sun L, Wu H, Tian J, Bai K.
europepmc   +1 more source

Device Design Implications on <i>R</i>_ON×<i>Q</i>_OSS FOM in p-GaN Power HEMTs: A Simulation Study. [PDF]

Micromachines (Basel)
Zagni N, Verzellesi G, Chini A.
europepmc   +1 more source

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

A robust GaN p-FET with unconventional electron conduction. [PDF]

Commun Eng
Kumar M, Xu L, Labau T, Biscarrat J, Torrengo S, Lecouvey C, Charles M, Elias C, Olivier A, Petitjean EC, Saghi Z, Zgheib J, Escoffier R, Buckley J.   +13 more
europepmc   +1 more source

Atomically confined insertion for 2D strain and polarization engineered GaN electronics. [PDF]

Nat Commun
Shi Y, Dong Z, Wang J, Guo D, Li W, Sha W, Li Z, Yang Z, Zhang J, Liu J, Xu T, Hu W, Wang ZL, Zhai J.   +13 more
europepmc   +1 more source