Results 151 to 160 of about 43,262 (231)

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

, 2013
 Anovel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of a normal gate, was proposed and fabricated for the first time to compare the dynamic characteristics of AlGaN/GaN HEMTs with a source field plate (SFP)
Cai, Y(蔡勇), Yu, Guohao, Wang, Yue, Wang, Y, Cai, Yong, Zhang, BS(张宝顺), Yu, GH(于国浩), Dong, Zhihua, Zeng, Chunhong, Zeng, CH(曾春红), Zhang, Baoshun, Dong, ZH(董志华)   +11 more
core  

Device engineering for stable and reliable gate operation in Schottky-type p-GaN gate HEMTs

Schottky-type p-GaN gate high electron mobility transistors (HEMTs) are commercially promising power devices due to their balance of performance and fabrication cost.
Chen, Junting
core  

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

Effect of temperature on 2D terahertz plasmons in AlGaN/GaN heterostructures. [PDF]

Sci Rep
Dub M, Sai P, Yavorskiy D, Ivonyak Y, Seweryn A, Godlewski M, Prystawko P, Kucharski R, Cywiński G, Knap W, Rumyantsev S.   +10 more
europepmc   +1 more source

Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]

Light Sci Appl
Chu C, Jiang Y, He C, Li W, Tian K, Zhang Y, Sun X, Zhang ZH.   +7 more
europepmc   +1 more source

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source