Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Liu F +15 more
europepmc +1 more source
Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
Omar A, Loan SA.
europepmc +1 more source
Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
Prio MH +6 more
europepmc +1 more source
The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]
Shi Y +5 more
europepmc +1 more source
Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
europepmc +1 more source
Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc +1 more source
The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]
Shen Z +10 more
europepmc +1 more source
Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Won YH +6 more
europepmc +1 more source
Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]
Chuang YT, Tumilty N.
europepmc +1 more source
Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]
Li S +13 more
europepmc +1 more source

