Results 171 to 180 of about 29,909,859 (245)

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source

Design and validation of a deep learning GAN for predicting ¹ ⁷ ⁷Lu dose voxel kernels using GATE/GEANT4 Monte Carlo and IDAC-Dose 2.1 in phantom dosimetry. [PDF]

J Appl Clin Med Phys
Kapis OE, Kaniu MI, Giuseppe I, Angeyo HK.   +3 more
europepmc   +1 more source

High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching. [PDF]

Micromachines (Basel)
Ding Y, Cao X, Li Y, Yang X, Wen Y, Li X, Huang X, Li Z, Weng J, Zhang B.   +9 more
europepmc   +1 more source

Abstract Supplement HIV Glasgow 8–11 November 2026, Glasgow, UK/Virtual

Journal of the International AIDS Society, Volume 29, Issue S6, November 2026.
wiley   +1 more source

Dual-function floating-gate memory driver for energy-efficient integrated display-illumination system. [PDF]

Nat Commun
Wu H, Wang Y, Zong Q, Yi J, Liu H, Sun X, Shuai Q, Hu J, Lin X, Wang Y, Guo P, Yang X, Xie T, Liao X, Wang B, Zhao X, Zhu X, Tian B, Wang X, Li D, Pan A.   +20 more
europepmc   +1 more source

Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications. [PDF]

Micromachines (Basel)
Belguith M, Eloued S, Kadi M, Ben Hadj Slama J, Hamouda M.   +4 more
europepmc   +1 more source

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source

Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]

Materials (Basel)
Alshammari N, Rao MV, Li Q.
europepmc   +1 more source