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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
2019 IEEE International Reliability Physics Symposium (IRPS), 2019In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed investigation of the process split and geometry dependency is done.
Steve Stoffels +15 more
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Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
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Dynamic Threshold Voltage in $p$-GaN Gate HEMT
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei +9 more
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Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias
ECS Journal of Solid State Science and Technology, 2022This study investigates the gate degradation mechanisms of Schottky p-GaN gate HEMTs systemically. The constant gate bias stress is applied to investigate the gate breakdown. Schottky p-GaN Gate HEMTs show a shorter gate lifetime as gate bias increases. The gate leakage current after gate breakdown shows a resistance-like characteristic. The equivalent
Zhen-Wei Qin +3 more
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GaN HEMTs with p-GaN gate: field- and time-dependent degradation
SPIE Proceedings, 2017GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO +7 more
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Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope
Journal of Nanoscience and Nanotechnology, 2016A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase ...
Jong-Ho, Bae, Jong-Ho, Lee
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Impact of Gate Offset on PBTI of p-GaN Gate HEMTs
2022 IEEE International Reliability Physics Symposium (IRPS), 2022Ethan S. Lee +3 more
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Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs
Microelectronics Reliability, 2020Abstract In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented. The proposed solution has been verified by SPICE electrothermal simulations and experiments on commercial devices within and out of safe operating area (SOA).
Borghese A. +5 more
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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
IEEE Electron Device Letters, 2013The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrode as the gate stack on top of the AlGaN/GaN layer.
Injun Hwang +11 more
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Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs
IEEE Transactions on Electron Devices, 2023Xin Chao +5 more
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