Results 181 to 190 of about 3,650 (215)

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

IEEE Electron Device Letters, 2018
The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
openaire   +2 more sources

Investigation of a Gate-Series-Diode Structure for Improving Schottky-Type P-Gan Gate Reliability

Journal of Semiconductors
Abstract In this paper, a novel gate-series-diode structure for the Schottky-type p-GaN HEMTs is proposed, and the impact of the proposed structure on gate−source voltage oscillation is investigated when the device is turned on. The proposed structure is capable of effectively mitigating the gate−source voltage overshoot problem of ...
Xuejing Sun, Shenglei Zhao, Yinhe Wu, Longyang Yu, Juan Gui, Ga Zhang, Xiufeng Song, Shuzhen You, Song Yang, Hui Sun, Bin Hu, Huantao Duan, Jin Rao, Zhen Chen, Yue Hao, Jincheng Zhang   +15 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, 2021
Song Wenjie, Li Zhang, Kevin J Chen
exaly  

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices

Materials, 2022
Anthony Calzolaro, Thomas Mikolajick, Mikolajick Thomas   +2 more
exaly  

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023
Caien Sun, Zixu Niu, Shu Yang
openaire   +1 more source

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
P. S. Sreelekshmi, Jobymol Jacob
openaire   +1 more source

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT

Science China Information Sciences
Mao Jia, Bin Hou, Ling Yang 0003, Meng Zhang, Mei Wu, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma 0001, Yue Hao 0001   +12 more
openaire   +1 more source

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

IEEE Transactions on Electron Devices, 2022
Qing Wang, Fangmin Zeng, Guangrui Xia
exaly