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Gate Reliability of p-GaN HEMT With Gate Metal Retraction
IEEE Transactions on Electron Devices, 2019 In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico +6 more
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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
2019 IEEE International Reliability Physics Symposium (IRPS), 2019 In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed investigation of the process split and geometry dependency is done.
Steve Stoffels +15 more
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Gate Reliability and VTH Stability Investigations of p-GaN HEMTs
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020 Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua +5 more
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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
IEEE Electron Device Letters, 2013The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrode as the gate stack on top of the AlGaN/GaN layer.
Injun Hwang, Jongseob Kim, Jaejoon Oh
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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs [PDF]
IEEE Transactions on Electron Devices, 2018 We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations.
Luca Sayadi +2 more
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Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022 On GaN power IC platform, the lateral p-GaN gate high-electron-mobility transistors (HEMTs) can be reconfigured as diodes in a bootstrap circuit by shorting the gate and source as the anode terminal.
Yan Cheng +6 more
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p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
IEEE Electron Device Letters, 2021 By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p -GaN in the gate stack, a p -GaN gate high-electron-mobility transistor (HEMT) with enhanced gate reliability is demonstrated.
Li Zhang, Zheyang Zheng, Song Yang
exaly +2 more sources
Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
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