Results 201 to 210 of about 43,262 (231)

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2019
In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type ${p}$ -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted.
Jiabei He, Jin Wei, Song Yang, Yuru Wang, Kailun Zhong, Kevin J. Chen   +5 more
openaire   +2 more sources

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023
Caien Sun, Zixu Niu, Shu Yang
openaire   +1 more source

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

IEEE Transactions on Electron Devices, 2022
Guangnan Zhou, Fanming Zeng, Qing Wang   +2 more
exaly  

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE Electron Device Letters, 2017
Tian-Li Wu, Benoit Bakeroot, Shuzhen You   +2 more
exaly  

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
P. S. Sreelekshmi, Jobymol Jacob
openaire   +1 more source

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT

Science China Information Sciences
Mao Jia, Bin Hou, Ling Yang 0003, Meng Zhang, Mei Wu, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma 0001, Yue Hao 0001   +12 more
openaire   +1 more source

Switching Transient Analysis for Normally-<sc>off</sc> GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

IEEE Transactions on Power Electronics, 2019
Ruiliang Xie, Xu Yang, Jin Wei
exaly  

Gate Reliability of enhanced-mode p-GaN HEMTs

This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.
openaire   +1 more source