Results 201 to 210 of about 29,909,859 (245)
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
IEEE Electron Device Letters, 2019 The gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under a gate bias, combined with electroluminescence imaging and pulsed measurements. For gate stress ( ${V} _{\text {Gstress}}$ ) from 0 to 13 V, the drain current is found to be stable and decreases
Mei Ge +11 more
openaire +4 more sources
VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress
IEEE Electron Device Letters, 2018 The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
openaire +3 more sources
Switching Transient Analysis for Normally-Off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
IEEE Transactions on Power Electronics, 2019 Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction (between gate electrode and the p-GaN layer) and a p-GaN ...
Ruiliang Xie, Jin Wei, Kevin J. Chen
exaly +2 more sources
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs [PDF]
IEEE Transactions on Electron Devices, 2018 We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations.
Luca Sayadi +2 more
exaly +2 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Gate Reliability of p-GaN HEMT With Gate Metal Retraction
IEEE Transactions on Electron Devices, 2019In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico +6 more
openaire +2 more sources
Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
openaire +1 more source
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
IEEE Electron Device Letters, 2017 In this letter, we report a detailed experimental investigation of the time-dependent breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate, controlled by a Schottky metal/p-GaN junction.
Stefaan Decoutere +2 more
exaly +2 more sources
Dynamic Threshold Voltage in $p$-GaN Gate HEMT
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei +9 more
openaire +1 more source
Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias
ECS Journal of Solid State Science and Technology, 2022This study investigates the gate degradation mechanisms of Schottky p-GaN gate HEMTs systemically. The constant gate bias stress is applied to investigate the gate breakdown. Schottky p-GaN Gate HEMTs show a shorter gate lifetime as gate bias increases. The gate leakage current after gate breakdown shows a resistance-like characteristic. The equivalent
Zhen-Wei Qin +3 more
openaire +1 more source
GaN HEMTs with p-GaN gate: field- and time-dependent degradation
SPIE Proceedings, 2017GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO +7 more
openaire +1 more source