Results 201 to 210 of about 104,754 (247)
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Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
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Gate Reliability of p-GaN HEMT With Gate Metal Retraction
IEEE Transactions on Electron Devices, 2019In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico +6 more
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Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias
ECS Journal of Solid State Science and Technology, 2022This study investigates the gate degradation mechanisms of Schottky p-GaN gate HEMTs systemically. The constant gate bias stress is applied to investigate the gate breakdown. Schottky p-GaN Gate HEMTs show a shorter gate lifetime as gate bias increases. The gate leakage current after gate breakdown shows a resistance-like characteristic. The equivalent
Zhen-Wei Qin +3 more
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Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope
Journal of Nanoscience and Nanotechnology, 2016A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase ...
Jong-Ho, Bae, Jong-Ho, Lee
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Dynamic Threshold Voltage in $p$-GaN Gate HEMT
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei +9 more
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Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
IEEE Transactions on Device and Materials Reliability, 2021We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The threshold voltage is monitored from $10~\mathrm {\mu }\text{s}$ up to 100 s under positive gate bias stress and during recovery.
Arno Stockman +5 more
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Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020The time-dependent gate failure behavior of Schottky-type p-GaN gate transistors subjected to positive gate voltage stress in the low-temperature range of power electronic applications (i.e. −100 °C ~ 25 °C) is investigated. By means of temperature-accelerated and voltage-accelerated gate stress experiments, the dependence of time-to-failure on ...
Jiabei He +6 more
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Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
IEEE Electron Device Letters, 2019The gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under a gate bias, combined with electroluminescence imaging and pulsed measurements. For gate stress ( ${V} _{\text {Gstress}}$ ) from 0 to 13 V, the drain current is found to be stable and decreases
Mei Ge +11 more
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GaN HEMTs with p-GaN gate: field- and time-dependent degradation
SPIE Proceedings, 2017GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO +7 more
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VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress
IEEE Electron Device Letters, 2018The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
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