Results 211 to 220 of about 104,754 (247)

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2019
In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type ${p}$ -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted.
Jiabei He, Jin Wei, Song Yang, Yuru Wang, Kailun Zhong, Kevin J. Chen   +5 more
openaire   +2 more sources

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
Gate reliability and reverse-bias-stress-induced $V$ TH instability issues were investigated in the E-mode p-GaN gate HEMTs. A GaN-based p-n junction gate (PNJ) HEMT featuring an $n$ -GaN/ $p$ -GaN/AlGaN/GaN gate stack was proposed to effectively reduce the gate leakage and enlarge safe gate operation bias region of the p-GaN gate devices. The $V$
Mengyuan Hua, Chengcai Wang, Junting Chen, Li Zhang, Zheyang Zheng, Kevin J. Chen   +5 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesus A. del Alamo   +3 more
openaire   +1 more source

Temperature-Dependent Gate Degradation of $p$-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
This paper experimentally investigates the time-dependent gate degradation of Schottky-type $\boldsymbol{p}$ -GaN gate transistors subjected to positive gate voltage stress. By means of combined static/dynamic gate stress and temperature-dependent analysis, the dependence of time-to-breakdown ( $\boldsymbol{t}_{\mathbf{BD}}$ ) on stress mode and ...
Jiabei He, Jin Wei, Song Yang, Mengyuan Hua, Kaikun Zhong, Kevin J. Chen   +5 more
openaire   +1 more source

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang   +5 more
openaire   +1 more source

A Schottky gate p-GaN fin-channel field effect transistor on very low doped p-GaN films

Japanese Journal of Applied Physics
Abstract In this paper, we report a trigate fin-channel field effect transistor (FET) on very low doped p-GaN films. While achieving a good source/drain ohmic contact mandates a high p-GaN doping; a good Schottky gate interface contrarily demands a low doping.
Manuel Fregolent, Simranjit Singh, Shun LU, Hirotaka Watanabe, Jia Wang, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Yoshio Honda, Hiroshi Amano, Biplab Sarkar   +11 more
openaire   +1 more source

Study of TaN-Gated p-GaN E-Mode HEMT

IEEE Transactions on Electron Devices, 2023
Rijo Baby, K. Reshma, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath   +5 more
openaire   +1 more source

Gate Circuit improves p-GaN HEMT VTH reliability

2023
Liu, Xinke, Chen, Zengfa, Zhong, Ze
openaire   +1 more source

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, 2021
Li Zhang, Zheyang Zheng, Song Yang
exaly