Results 211 to 220 of about 43,262 (231)

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE Electron Device Letters, 2015
Tian-Li Wu, Denis Marcon, Shuzhen You
exaly  

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

IEEE Transactions on Electron Devices, 2020
Yiqiang Chen, J T Feng, J L Wang
exaly  

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

IEEE Electron Device Letters, 2016
M Tapajna, Oliver Hilt, J Kuzmik
exaly  

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices, 2018
A Stockman, F Masin, Matteo Meneghini
exaly  

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

IEEE Electron Device Letters, 2017
Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone   +2 more
exaly  

>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning

IEEE Electron Device Letters, 2016
J S Moon, C Mcguire
exaly  

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

IEEE Electron Device Letters, 2015
Liang-Yu Su, Yuh-Renn Wu, Jian-Jang Huang   +2 more
exaly  

Tri-Gate Normally-Off GaN Power MISFET

IEEE Electron Device Letters, 2012
Bin Lu, Elison Matioli, Tomáš Palacios   +2 more
exaly  

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters, 2019
Huaxing Jiang, Renqiang Zhu, Qifeng Lyu   +2 more
exaly  

Physical Insights Into the Impact of p-GaN Sidewall Passivation on Gate Leakage, Threshold Voltage Instability, and Gate Breakdown Behavior in p-GaN Gate AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
Rasik Rashid Malik, Vipin Joshi, Simran R. Karthik, Rajarshi Roy Chaudhuri, Mayank Shrivastava   +4 more
openaire   +1 more source