Results 211 to 220 of about 29,909,859 (245)

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope

Journal of Nanoscience and Nanotechnology, 2016
A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase ...
Jong-Ho, Bae, Jong-Ho, Lee
openaire   +2 more sources

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo   +3 more
openaire   +1 more source

Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

Microelectronics Reliability, 2020
Abstract In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented. The proposed solution has been verified by SPICE electrothermal simulations and experiments on commercial devices within and out of safe operating area (SOA).
Borghese A., Riccio M., Longobardi G., Maresca L., Breglio G., Irace A.   +5 more
openaire   +2 more sources

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang   +5 more
openaire   +1 more source

Investigation of a Gate-Series-Diode Structure for Improving Schottky-Type P-Gan Gate Reliability

Journal of Semiconductors
Abstract In this paper, a novel gate-series-diode structure for the Schottky-type p-GaN HEMTs is proposed, and the impact of the proposed structure on gate−source voltage oscillation is investigated when the device is turned on. The proposed structure is capable of effectively mitigating the gate−source voltage overshoot problem of ...
Xuejing Sun, Shenglei Zhao, Yinhe Wu, Longyang Yu, Juan Gui, Ga Zhang, Xiufeng Song, Shuzhen You, Song Yang, Hui Sun, Bin Hu, Huantao Duan, Jin Rao, Zhen Chen, Yue Hao, Jincheng Zhang   +15 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

P-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, 2021
Wenjie Song, Li Zhang, Kevin J. Chen
exaly  

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
P. S. Sreelekshmi, Jobymol Jacob
openaire   +1 more source

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023
Caien Sun, Zixu Niu, Shu Yang
openaire   +1 more source