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Enhancing Gate Reliability of p-GaN Gate HEMTs by Segmented-Gate Contact Structures
IEEE Transactions on Electron DevicesYilong Lei +13 more
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Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Science China Information SciencesMao Jia +12 more
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Gate Reliability of enhanced-mode p-GaN HEMTs
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.openaire +1 more source
Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
IEEE Electron Device Letters, 2017Shuzhen You +2 more
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Doping Engineering of p-GaN Gate HEMTs on Si
2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)Jun-Zhe Wang +5 more
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Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2015Chih-Fang Huang +2 more
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Mechanism of Threshold Voltage Shift in p -GaN Gate AlGaN/GaN Transistors
IEEE Electron Device Letters, 2018Hamid Amini Moghadam +2 more
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