Results 221 to 230 of about 104,754 (247)

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023
Caien Sun, Zixu Niu, Shu Yang
openaire   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
P. S. Sreelekshmi, Jobymol Jacob
openaire   +1 more source

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

IEEE Transactions on Electron Devices, 2022
Guangnan Zhou, Fanming Zeng, Qing Wang
exaly  

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE Electron Device Letters, 2017
Tian-Li Wu, Benoit Bakeroot, Niels Posthuma   +2 more
exaly  

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

IEEE Transactions on Electron Devices, 2018
Luca Sayadi, Giuseppe Iannaccone, Sebastien Sicre   +2 more
exaly  

Gate Reliability of enhanced-mode p-GaN HEMTs

This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.
openaire   +1 more source

Switching Transient Analysis for Normally-<sc>off</sc> GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

IEEE Transactions on Power Electronics, 2019
Xie, Ruiliang, Xu Yang, Jin Wei
exaly  

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE Electron Device Letters, 2015
Tian-Li Wu, Denis Marcon, Shuzhen You
exaly  

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

IEEE Transactions on Electron Devices, 2020
Yi-Qiang Chen, Juntu Feng, He Zhiyuan
exaly