Results 231 to 240 of about 104,754 (247)

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

IEEE Electron Device Letters, 2016
Milan Tapajna, Jan Kuzmik
exaly  

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices, 2018
Arno Stockman, Fabrizio Masin, Matteo Meneghini   +2 more
exaly  

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

IEEE Electron Device Letters, 2017
Andrea N Tallarico, Paolo Magnone, Enrico Sangiorgi   +2 more
exaly  

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

IEEE Electron Device Letters, 2015
Yuh-Renn Wu, Jian-Jang Huang
exaly  

Tri-Gate Normally-Off GaN Power MISFET

IEEE Electron Device Letters, 2012
Bin Lu, Elison Matioli, Tomas Palacios
exaly  

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE Electron Device Letters, 2019
Jiang, Huaxing, Renqiang Zhu, Lyu, Qifeng   +2 more
exaly  

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

IEEE Transactions on Electron Devices, 2016
Isabella Rossetto, Matteo Meneghini, Oliver Hilt   +2 more
exaly  

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

IEEE Transactions on Electron Devices, 2013
A Azizur Rahman, Arnab Bhattacharya, Amitava DasGupta   +2 more
exaly  

Copper gate AlGaN/GaN HEMT with low gate leakage current

IEEE Electron Device Letters, 2003
Jin-Ping Ao
exaly  

Gate Stability and Reliability of Fully Depleted p-GaN Gate HEMTs

openaire   +1 more source