Results 231 to 240 of about 29,909,859 (245)
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Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
IEEE Transactions on Electron Devices, 2013Amitava Dasgupta +2 more
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Tri-Gate Normally-Off GaN Power MISFET
IEEE Electron Device Letters, 2012Elison Matioli, Tomás Palacios, Bin Lu
exaly
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
IEEE Electron Device Letters, 2015Yuh-Renn Wu, JianJang Huang, Finella Lee
exaly
High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
IEEE Electron Device Letters, 2019Renqiang Zhu, Kei May Lau, LYU Qifeng
exaly
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
IEEE Electron Device Letters, 2008Tomás Palacios +2 more
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Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model
IEEE Transactions on Power ElectronicsYuhao Zhang, Bixuan Wang, Qihao Song
exaly
Enhanced Gate Reliability and High Threshold Voltage p-GaN HEMT With p-NiO/p-GaN Heterojunction
2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)Jinbing Wang +11 more
openaire +1 more source
Uncertainty-Aware Gate-Lifetime Prediction of p-GaN Gate HEMTs Using Gaussian Processes
2025 9th International Conference on System Reliability and Safety (ICSRS)Shuoyan Zhao +6 more
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