Results 191 to 200 of about 43,262 (231)

Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias

ECS Journal of Solid State Science and Technology, 2022
This study investigates the gate degradation mechanisms of Schottky p-GaN gate HEMTs systemically. The constant gate bias stress is applied to investigate the gate breakdown. Schottky p-GaN Gate HEMTs show a shorter gate lifetime as gate bias increases. The gate leakage current after gate breakdown shows a resistance-like characteristic. The equivalent
Zhen-Wei Qin, Wei-Chia Chen, Hao-Hsuan Lo, Yue-Ming Hsin   +3 more
openaire   +1 more source

Dynamic Threshold Voltage in $p$-GaN Gate HEMT

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei, Han Xu, Ruiliang Xie, Meng Zhang, Hanxing Wang, Yuru Wang, Kailun Zhong, Mengyuan Hua, Jiabei He, Kevin J. Chen   +9 more
openaire   +1 more source

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

SPIE Proceedings, 2017
GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO, MENEGHINI, MATTEO, ROSSETTO, ISABELLA, CANATO, ELEONORA, Bartholomeus, J., DE SANTI, CARLO, TRIVELLIN, NICOLA, ZANONI, ENRICO   +7 more
openaire   +1 more source

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope

Journal of Nanoscience and Nanotechnology, 2016
A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase ...
Jong-Ho, Bae, Jong-Ho, Lee
openaire   +2 more sources

Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

Microelectronics Reliability, 2020
Abstract In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented. The proposed solution has been verified by SPICE electrothermal simulations and experiments on commercial devices within and out of safe operating area (SOA).
Borghese A., Riccio M., Longobardi G., Maresca L., Breglio G., Irace A.   +5 more
openaire   +2 more sources

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo   +3 more
openaire   +1 more source

Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors

IEEE Electron Device Letters, 2019
The gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under a gate bias, combined with electroluminescence imaging and pulsed measurements. For gate stress ( ${V} _{\text {Gstress}}$ ) from 0 to 13 V, the drain current is found to be stable and decreases
Mei Ge, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Maria Ruzzarin, Dunjun Chen, Hai Lu, Xinxin Yu, Jianjun Zhou, Carlo De Santi, Rong Zhang, Youdou Zheng   +11 more
openaire   +3 more sources

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
The time-dependent gate failure behavior of Schottky-type p-GaN gate transistors subjected to positive gate voltage stress in the low-temperature range of power electronic applications (i.e. −100 °C ~ 25 °C) is investigated. By means of temperature-accelerated and voltage-accelerated gate stress experiments, the dependence of time-to-failure on ...
Jiabei He, Jin Wei, Zheyang Zheng, Song Yang, Yang Li, Baoling Huang, Kevin J. Chen   +6 more
openaire   +1 more source

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

IEEE Electron Device Letters, 2018
The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
openaire   +2 more sources

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang   +5 more
openaire   +1 more source