Results 191 to 200 of about 3,650 (215)

Gate Reliability of enhanced-mode p-GaN HEMTs

This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.
openaire   +1 more source

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE Electron Device Letters, 2017
Shuzhen You, Stefaan Decoutere, Tian-Li Wu   +2 more
exaly  

Switching Transient Analysis for Normally-<sc>off</sc> GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

IEEE Transactions on Power Electronics, 2019
Xie Ruiliang, Wei Jin, Kevin J Chen
exaly  

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE Electron Device Letters, 2015
Shuzhen You, Stefaan Decoutere, Tian-Li Wu   +2 more
exaly  

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

IEEE Electron Device Letters, 2016
Milan Tapajna, Jan Kuzmik, J Wurfl
exaly  

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

IEEE Transactions on Electron Devices, 2018
Luca Sayadi, Oliver Haberlen, Giuseppe Iannaccone   +2 more
exaly  

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

IEEE Transactions on Electron Devices, 2020
Y Q Chen, Dengyun Lei, He Zhiyuan
exaly  

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices, 2015
Chih-Fang Huang, Yung C Liang, Ganesh S Samudra   +2 more
exaly  

Doping Engineering of p-GaN Gate HEMTs on Si

2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
Jun-Zhe Wang, Kai-Chieh Chen, Sheng-Kai Chen, Po-Chun Yeh, Po-Tsung Tu, Jen-Inn Chyi   +5 more
openaire   +1 more source

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

IEEE Electron Device Letters, 2017
Stefaan Decoutere, Enrico Sangiorgi, Niels Posthuma   +2 more
exaly