Results 191 to 200 of about 29,909,859 (245)

Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs

Microelectronic Engineering
S. Milazzo, G. Greco, G. Giorgino, C. Miccoli, S. Mirabella, F. Iucolano, F. Roccaforte   +6 more
openaire   +1 more source

Giant bulk photovoltaic effect driven by interfacial symmetry breaking in MoS₂/Ta₂NiSe₅ heterostructures. [PDF]

Nat Commun
Ma J, Leng P, Peng L, Hao C, Meng X, Liu J, Gan Y, Luo M, Zhang Z, Gu J, Liu Q, Duan L, Xiang D, Shi W, Wang P, Chu W, Yuan X, Hu W, Zhang C.   +18 more
europepmc   +1 more source

4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]

Micromachines (Basel)
Chen C, Liu Y, Zhou X, Li P, Zhang Y, Yang B, Yang Z, Bai J.   +7 more
europepmc   +1 more source

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

2019 IEEE International Reliability Physics Symposium (IRPS), 2019
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed investigation of the process split and geometry dependency is done.
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka   +15 more
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P-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

IEEE Electron Device Letters, 2013
The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrode as the gate stack on top of the AlGaN/GaN layer.
Injun Hwang, Jongseob Kim, Jaikwang Shin
exaly   +2 more sources