Results 191 to 200 of about 104,754 (247)

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

Effects of Carrier Trapping and Noise in Triangular-Shaped GaN Nanowire Wrap-Gate Transistor. [PDF]

Nanomaterials (Basel)
Mallem SPR, Puneetha P, Choi Y, Mesheha MM, Zafer M, Kang KS, Lee DY, Shim J, Im KS, An SJ.   +9 more
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

Micromachines (Basel)
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, Chang Q, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Path planning for UAVs in complex terrain based on the PGD model: Algorithmic improvements combining feature extraction and reinforcement learning. [PDF]

PLoS One
Liu L, Li X, Meng L, Zhao Y, Lv Y.
europepmc   +1 more source

p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. [PDF]

Sci Rep
Kumar M, Labau T, Xu L, Zgheib J, Escoffier R, Buckley J.   +5 more
europepmc   +1 more source

Design and Application of p-AlGaN Short Period Superlattice. [PDF]

Micromachines (Basel)
Liu Y, Chen C, Zhou X, Li P, Yang B, Zhang Y, Bai J.   +6 more
europepmc   +1 more source

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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

IEEE Electron Device Letters, 2013
The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrode as the gate stack on top of the AlGaN/GaN layer.
Injun Hwang, Jongseob Kim, Jaikwang Shin
exaly   +2 more sources