Results 121 to 130 of about 29,909,859 (245)
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs
In this paper, preliminary gate reliability of p-GaN HEMTs under high positive gate bias is studied. Gate robustness is of great interest both from an academic and industrial point of view; in fact, different tests and models can be explored to estimate ...
Giovanni Giorgino +13 more
doaj +1 more source
Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis +12 more
wiley +1 more source
E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology. [PDF]
Jia LF +7 more
europepmc +1 more source
AI is transforming TPD by improving the design, prediction, and optimization of degraders such as PROTACs, molecular glues, and LYTACs. This review summarizes key AI‐driven advances, highlights applications across drug discovery stages, and discusses remaining challenges and future directions for accelerating the development of therapies against ...
Shuanglin Qin +10 more
wiley +1 more source
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. [PDF]
Huang YC +6 more
europepmc +1 more source
This paper introduces a conceptual framework for an AI‐enhanced smart boiler suit, shifting maritime surveyor safety from reactive to proactive monitoring. Through integrated sensor networks and edge AI analytics, the proposed architecture offers a robust modular roadmap for advancing intelligent personal protective equipment in hazardous offshore and ...
P. Katsinellos +4 more
wiley +1 more source
Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
The measured values of the threshold voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) with a p-GaN gate are generally more positive than what is expected from a classical HEMT. The transfer characteristics exhibit subthreshold slopes which
Steve Stoffels +10 more
core +1 more source
An Innovative Approach to Multi‐Valued Logic
The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley +1 more source
This work presents a comprehensive study of GaN-on-Si pseudo-vertical MOSFETs focusing on single-trench and multi-trench designs. Thanks to a gate-first process flow based on an Al2O3/TiN MOS stack, both fabricated devices exhibit promising transistor ...
Valentin Ackermann +8 more
doaj +1 more source
All Gone to the Dogs: Peasant and Aristocratic Masculinities in a Late Medieval Swiss Revolt
ABSTRACT This article examines chronicle accounts of the so‐called ‘Waldmann Affair’, a revolt within the territories of the city–state of Zurich in 1489 directed against its mayor, Hans Waldmann. The revolt was partly the consequence of failed economic and political reforms which put pressure on the countryside, but was provoked by the command issued ...
Jamie Page
wiley +1 more source

