Voltage reference based on CMOS threshold voltage
Dianzi Jishu Yingyong, 2023 A novel low temperature coefficient voltage referece without resistors is presented in this brief, which is compatible with standard TSMC 0.18 µm CMOS technology.
Xu Qinghao, Xi Dongjie
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Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors [PDF]
MicromachinesWith the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
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Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors [PDF]
Micromachines, 2021 In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages.
Je-Hyuk Kim +7 more
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A Highly Efficient RF-DC Converter for Energy Harvesting Applications Using a Threshold Voltage Cancellation Scheme [PDF]
Sensors, 2022 In this paper, a self-threshold voltage (Vth) compensated Radio Frequency to Direct Current (RF-DC) converter operating at 900 MHz and 2.4 GHz is proposed for RF energy harvesting applications.
Muhammad Basim +9 more
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Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs
IEEE Journal of the Electron Devices Society, 2020 This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements.
Arnout Beckers +5 more
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Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures
IEEE Access, 2023 The paper presents a novel approach to the modeling of the back-gate dependence of the threshold voltage of Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs down to cryogenic temperatures by using slope factors with a gate coupling effect.
Hung-Chi Han +4 more
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npj 2D Materials and Applications, 2022 The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally
Luca Anzi +5 more
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Cryogenic MOSFET Threshold Voltage Model [PDF]
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019 This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization.
Arnout Beckers +2 more
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Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate [PDF]
Журнал нано- та електронної фізики, 2017 Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimensional mathematical modeling is presented in this paper.
Neha Goel, Manoj Kumar Pandey
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Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model
Applied Sciences, 2023 Accurate modeling of threshold voltage is necessary in the integrated circuit design of strained silicon devices. Thoroughly researching the factors that affect threshold voltage and establishing a more precise threshold voltage model, can provide ...
Zhichao Zhao +5 more
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