Results 11 to 20 of about 223,006 (306)
Threshold Voltage Control Schemes in Finfets
International Journal of VLSI Design & Communication Systems, 2012 Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped
V. Narendar +4 more
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Voltage controlled memristor threshold logic gates [PDF]
2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2016 In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND to NOR functionality. We further show how threshold logic in the voltage-controlled resistive cell can be used to
Akshay Kumar Maan, Alex Pappachen James
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Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors
Energies, 2021 This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG).
Grzegorz Blakiewicz +2 more
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Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides [PDF]
, 2000 In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale.
Kalna, K., Asenov, A.
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A Voltage Multiplier With Adaptive Threshold Voltage Compensation
IEEE Journal of Solid-State Circuits, 2017 A voltage multiplier (VM) with adaptive threshold voltage compensation is presented to enhance the power conversion efficiency (PCE). It is fabricated in a 0.18- $\mu \text{m}$ CMOS process. With the input frequency of 402 MHz and a load resistor of 30 $\text{k}\Omega $ , this VM achieves the PCE of 31.9% with the input power of −1 dBm, and ...
Ye-Sing Luo, Shen-Iuan Liu
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The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Khan, Khalid Saeed +15 more
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Fabrication of low threshold voltage microlasers
Electronics Letters, 1992 Summary form only given. The voltage required for threshold in vertical cavity surface emitting lasers (VCSELs) has been reduced to 1.7 V. Molecular beam epitaxy (MBE) was used to grow 30 pairs of n-doped AlGaAs/AlAs bottom mirrors and the active p-n junction with a 1- mu m p-doped top contact.
Scherer, A. +4 more
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Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation
Journal of Integrated Circuits and Systems, 2020 This paper presents an analytical model to determine the threshold voltage in Ultrathin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FD SOI) MOSFETs operating in dynamic threshold (DT) voltage modes. The analytical model is based on implementing the quantum confinement effect and the DT restriction. The results show that the proposed
V. T. Itocazu +5 more
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Hybrid Internal Vth Cancellation Rectifiers for RF Energy Harvesting
IEEE Access, 2020 This paper presents two Internal Threshold Voltage (IVC) cancellation schemes for rectifiers used in RF energy harvesting: N-stage IVC based rectifier and IVC based rectifier with Self Vth Cancellation (SVC). The presented rectifiers reduce the threshold
Munir A. Al-Absi, Sami R. Al-Batati
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Materials Today Advances, 2023 Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-power ...
Seong-Hyun Hwang +9 more
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