Threshold Voltage Control Schemes in Finfets [PDF]
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped
V. Narendar +4 more
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Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model
Accurate modeling of threshold voltage is necessary in the integrated circuit design of strained silicon devices. Thoroughly researching the factors that affect threshold voltage and establishing a more precise threshold voltage model, can provide ...
Zhichao Zhao +5 more
doaj +1 more source
Voltage controlled memristor threshold logic gates [PDF]
In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND to NOR functionality. We further show how threshold logic in the voltage-controlled resistive cell can be used to
Akshay Kumar Maan, Alex Pappachen James
openaire +2 more sources
Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors
This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG).
Grzegorz Blakiewicz +2 more
doaj +1 more source
Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides [PDF]
In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale.
Kalna, K., Asenov, A.
core +1 more source
A Voltage Multiplier With Adaptive Threshold Voltage Compensation
A voltage multiplier (VM) with adaptive threshold voltage compensation is presented to enhance the power conversion efficiency (PCE). It is fabricated in a 0.18- $\mu \text{m}$ CMOS process. With the input frequency of 402 MHz and a load resistor of 30 $\text{k}\Omega $ , this VM achieves the PCE of 31.9% with the input power of −1 dBm, and ...
Ye-Sing Luo, Shen-Iuan Liu
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The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Khan, Khalid Saeed +15 more
core +1 more source
Fabrication of low threshold voltage microlasers
Summary form only given. The voltage required for threshold in vertical cavity surface emitting lasers (VCSELs) has been reduced to 1.7 V. Molecular beam epitaxy (MBE) was used to grow 30 pairs of n-doped AlGaAs/AlAs bottom mirrors and the active p-n junction with a 1- mu m p-doped top contact.
Scherer, A. +4 more
openaire +2 more sources
NMOS Logic Inverters Based on Threshold Voltage-Tunable IGZO Transistors [PDF]
Two n-channel indium-gallium-zinc-oxide (IGZO) TFTs with varying threshold voltage (Vth) were utilized to construct the Enhancement/Depletion (E/D) NMOS inverter. Tunable Vth was achieved by capping an ultrathin SnOx film layer onto the exposed IGZO back
Liang, L. Y. +4 more
core +1 more source
Hybrid Internal Vth Cancellation Rectifiers for RF Energy Harvesting
This paper presents two Internal Threshold Voltage (IVC) cancellation schemes for rectifiers used in RF energy harvesting: N-stage IVC based rectifier and IVC based rectifier with Self Vth Cancellation (SVC). The presented rectifiers reduce the threshold
Munir A. Al-Absi, Sami R. Al-Batati
doaj +1 more source

