Results 31 to 40 of about 1,711,818 (299)
Results in Physics, 2018 We report energy band bending of methylammonium lead halide (MAPbI3) perovskite film in contact with indium-tin-oxide (ITO) surface using photoelectron spectroscopy in air (PESA) and ultraviolet photoelectron spectroscopy (UPS) measurements.
Yujin Park, Byoungnam Park
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A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation
Micromachines, 2023 In recent years, the active-matrix organic light-emitting diode (AMOLED) displays have been greatly required. A voltage compensation pixel circuit based on an amorphous indium gallium zinc oxide thin-film transistor is presented for AMOLED displays.
Ning Wei +6 more
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NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]
, 2012 We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A. +10 more
core +1 more source
Analyzing the effect of gate dielectric on the leakage currents
MATEC Web of Conferences, 2016 An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material.
Sakshi, Dhariwal Sandeep, Singh Amandeep
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Applied Sciences, 2023 The threshold voltage distribution technique is an effective way to reduce the static power consumption of integrated circuits. Several gate-level-based distribution algorithms have been proposed, but the optimization effect and run time still need ...
Peng Li +5 more
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NMOS Logic Inverters Based on Threshold Voltage-Tunable IGZO Transistors
, 2016 Two n-channel indium-gallium-zinc-oxide (IGZO) TFTs with varying threshold voltage (Vth) were utilized to construct the Enhancement/Depletion (E/D) NMOS inverter. Tunable Vth was achieved by capping an ultrathin SnOx film layer onto the exposed IGZO back
Liang, L. Y. +4 more
core +1 more source
Comparative Drug Response Profiling in Neuroblastoma Cell Lines and Patient‐Derived Tumor Organoids
Pediatric Blood &Cancer, EarlyView.ABSTRACT High‐risk neuroblastoma remains a leading cause of pediatric cancer mortality, and improved preclinical models are needed to guide therapeutic developments. We screened seven high‐risk neuroblastoma cell lines and three patient‐derived tumor organoids with 528 compounds alongside bone marrow controls, and compared them with external datasets ...
Krzysztof Wierbiłowicz +12 more
wiley +1 more source
Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]
, 2010 Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Kundu, Sandip +4 more
core +2 more sources
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
IEEE Journal of the Electron Devices SocietyIn this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae +2 more
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Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs
Journal of Low Power Electronics and Applications, 2020 In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers.
Esteban Guevara +3 more
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