Results 31 to 40 of about 223,886 (306)
Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2007 It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic.
Gorev N. B. +2 more
doaj +2 more sources
Threshold Voltage and Space Charge in Organic Transistors
Physical Review Letters, 2009 4 pages, 4 ...
Gutierrez Lezama, Ignacio +1 more
openaire +5 more sources
Multi-Voltage Threshold Digitization Method
CT Lilun yu yingyong yanjiuAnalog-to-digital converters (ADCs) transform the analog signals of time-variant physical quantity into digital signals for storing and processing. As the bridge between natural science and information science, ADCs are indispensable in modern industry ...
Ao QIU, Qingguo XIE
doaj +1 more source
Results in Physics, 2018 We report energy band bending of methylammonium lead halide (MAPbI3) perovskite film in contact with indium-tin-oxide (ITO) surface using photoelectron spectroscopy in air (PESA) and ultraviolet photoelectron spectroscopy (UPS) measurements.
Yujin Park, Byoungnam Park
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Analyzing the effect of gate dielectric on the leakage currents
MATEC Web of Conferences, 2016 An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material.
Sakshi, Dhariwal Sandeep, Singh Amandeep
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An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]
, 2011 17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y +14 more
core +1 more source
Applied Sciences, 2023 The threshold voltage distribution technique is an effective way to reduce the static power consumption of integrated circuits. Several gate-level-based distribution algorithms have been proposed, but the optimization effect and run time still need ...
Peng Li +5 more
doaj +1 more source
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v [PDF]
In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P +10 more
core +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Acute lymphoblastic leukemia (ALL) is the most common pediatric cancer, with an overall survival now surpassing 90% in developed countries. However, treatments are not without adverse effects. In this study, we apply the severe toxicity‐free survival (STFS) framework to determine the prevalence of 21 physician‐defined severe ...
Lane Collier +10 more
wiley +1 more source
Tunable Threshold Voltage of Organic CMOS Inverter Circuits by Electron Trapping in Bilayer Gate Dielectrics [PDF]
, 2015 We have demonstrated tunable n-channel fullerene and p-channel pentacene OFETs and CMOS inverter circuit based on a bilayer-dielectric structure of CYTOP (poly(perfluoroalkenyl vinyl ether)) electret and SiO_2.
Murata, Hideyuki, Dao, Toan Thanh
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