Results 41 to 50 of about 223,886 (306)

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

open access: yesIEEE Journal of the Electron Devices Society
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae   +2 more
doaj   +1 more source

Appropriate threshold voltage toward high detection efficiency of large-area plastic scintillator

open access: yesHe jishu, 2023
BackgroundLarge-area plastic scintillators are widely used in radiation monitoring. They are typically employed as gamma radiation counters through signal over-threshold detection.
CHEN Jiutao   +4 more
doaj   +1 more source

Model for DMOST threshold voltage

open access: yesElectronics Letters, 1992
An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures.
Andersson, Mikael   +4 more
openaire   +2 more sources

Sustained Therapeutic Efficacy of Intravenous Plasminogen Concentrate in Pediatric Patients With Type 1 Plasminogen Deficiency: An Analysis of Dosing Parameters and Clinical Outcomes

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Background Type 1 plasminogen deficiency (PLGD‐1) is an ultra‐rare autosomal recessive disorder caused by variants in the PLG gene and affects approximately 1.6 individuals per million. The condition is characterized by decreased plasminogen levels and impaired function, resulting in fibrin‐rich lesions on mucous membranes throughout the body.
Charles Nakar   +7 more
wiley   +1 more source

Analysis of threshold voltage fluctuations due to short channel and random doping effects [PDF]

open access: yes, 2013
A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented.
FRANCISCO JAVIER DE LA HIDALGA WADE
core  

Health Literacy, Self‐Efficacy and Knowledge of Sickle Cell Disease Among Caregivers

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Background Sickle cell disease (SCD) is a hereditary blood disorder in which abnormal haemoglobin leads to severe anaemia, painful crises and organ failure. Caregivers’ health literacy (HL) – their ability to assess, understand and apply information, and interact with healthcare professionals – is crucial for managing children with SCD, yet ...
Melanie Bruinooge   +6 more
wiley   +1 more source

A Physically Based Relation Between Extracted Threshold Voltage and Surface Potential Flat-Band Voltage for MOSFET Compact Modeling [PDF]

open access: yes, 2001
Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based.
Easson, Craig A.   +6 more
core  

Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]

open access: yes, 2010
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken   +9 more
core   +1 more source

Early Impact of Childhood Opportunity on Neurocognitive Outcomes in Sickle Cell Disease

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Introduction Neurocognitive impairment is a well‐recognized complication of sickle cell disease (SCD) that begins early in childhood and persists across development. While cerebrovascular injury contributes substantially to risk, neurocognitive deficits are also observed in children without overt or silent cerebral infarctions, suggesting ...
Julia E. LaMotte   +5 more
wiley   +1 more source

A low-voltage activated, transient calcium current is responsible for the time-dependent depolarizing inward rectification of rat neocortical neurons in vitro [PDF]

open access: yes, 1987
Intracellular recordings were obtained from rat neocortical neurons in vitro. The current-voltage-relationship of the neuronal membrane was investigated using current- and single-electrode-voltage-clamp techniques.
Zieglgänsberger, Walter, Sutor, Bernd
core   +1 more source

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