Materials Today Advances, 2023 Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-power ...
Seong-Hyun Hwang +9 more
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Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation
Journal of Integrated Circuits and Systems, 2020 This paper presents an analytical model to determine the threshold voltage in Ultrathin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FD SOI) MOSFETs operating in dynamic threshold (DT) voltage modes. The analytical model is based on implementing the quantum confinement effect and the DT restriction. The results show that the proposed
V. T. Itocazu +5 more
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NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]
, 2012 We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A. +10 more
core +1 more source
Implementation of floating gate MOSFET in inverter for threshold voltage tunability
EPJ Web of Conferences, 2017 This paper presents the ability of floating gate MOSFET (FGMOS) threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design.
Musa F.A.S. +4 more
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Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium
IEEE Journal of the Electron Devices Society, 2016 The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface.
Chieh Lo +5 more
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Improved sub-threshold Slope in RF vertical MOSFETS using a frame gate architecture [PDF]
, 2008 We report a CMOS-compatible vertical MOSFET, which incorporates a frame gate architecture suitable for application in RF circuits. Fabricated surround gate vertical MOSFETs with the frame gate architecture show no degradation of short channel effects ...
Tan, L. +13 more
core +1 more source
Gate-sizing-based single Vdd test for bridge defects in multi-voltage designs [PDF]
, 2010 The use of multiple voltage settings for dynamic power management is an effective design technique. Recent research has shown that testing for resistive bridging faults in such designs requires more than one voltage setting for 100% fault coverage ...
Harrod, Peter +11 more
core +1 more source
Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
IEEE Journal of the Electron Devices Society, 2021 In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps&#
Yijun Shi +4 more
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A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation
Micromachines, 2023 In recent years, the active-matrix organic light-emitting diode (AMOLED) displays have been greatly required. A voltage compensation pixel circuit based on an amorphous indium gallium zinc oxide thin-film transistor is presented for AMOLED displays.
Ning Wei +6 more
doaj +1 more source
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
IEEE Journal of the Electron Devices Society, 2021 An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform.
A. Razavieh +12 more
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