An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]
, 2011 17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y +14 more
core +1 more source
Implementation of floating gate MOSFET in inverter for threshold voltage tunability
EPJ Web of Conferences, 2017 This paper presents the ability of floating gate MOSFET (FGMOS) threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design.
Musa F.A.S. +4 more
doaj +1 more source
Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium
IEEE Journal of the Electron Devices Society, 2016 The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface.
Chieh Lo +5 more
doaj +1 more source
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Khan, Khalid Saeed +15 more
core +2 more sources
Voltage controlled memristor threshold logic gates [PDF]
2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2016 In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND to NOR functionality. We further show how threshold logic in the voltage-controlled resistive cell can be used to
Akshay Kumar Maan, Alex Pappachen James
openaire +4 more sources
Fabrication of low threshold voltage microlasers
Electronics Letters, 1992 Summary form only given. The voltage required for threshold in vertical cavity surface emitting lasers (VCSELs) has been reduced to 1.7 V. Molecular beam epitaxy (MBE) was used to grow 30 pairs of n-doped AlGaAs/AlAs bottom mirrors and the active p-n junction with a 1- mu m p-doped top contact.
Scherer, A. +4 more
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A low-voltage activated, transient calcium current is responsible for the time-dependent depolarizing inward rectification of rat neocortical neurons in vitro [PDF]
, 1987 Intracellular recordings were obtained from rat neocortical neurons in vitro. The current-voltage-relationship of the neuronal membrane was investigated using current- and single-electrode-voltage-clamp techniques.
Zieglgänsberger, Walter +3 more
core +1 more source
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
IEEE Journal of the Electron Devices Society, 2021 An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform.
A. Razavieh +12 more
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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
IEEE Journal of the Electron Devices Society, 2021 In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps&#
Yijun Shi +4 more
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Multi-Voltage Threshold Digitization Method
CT Lilun yu yingyong yanjiuAnalog-to-digital converters (ADCs) transform the analog signals of time-variant physical quantity into digital signals for storing and processing. As the bridge between natural science and information science, ADCs are indispensable in modern industry ...
Ao QIU, Qingguo XIE
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