NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]
, 2012 We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A. +10 more
core +1 more source
Implementation of floating gate MOSFET in inverter for threshold voltage tunability
EPJ Web of Conferences, 2017 This paper presents the ability of floating gate MOSFET (FGMOS) threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design.
Musa F.A.S. +4 more
doaj +1 more source
Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium
IEEE Journal of the Electron Devices Society, 2016 The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface.
Chieh Lo +5 more
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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
IEEE Journal of the Electron Devices Society, 2021 In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps&#
Yijun Shi +4 more
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Improved sub-threshold Slope in RF vertical MOSFETS using a frame gate architecture [PDF]
, 2008 We report a CMOS-compatible vertical MOSFET, which incorporates a frame gate architecture suitable for application in RF circuits. Fabricated surround gate vertical MOSFETs with the frame gate architecture show no degradation of short channel effects ...
Tan, L. +13 more
core +1 more source
A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation
Micromachines, 2023 In recent years, the active-matrix organic light-emitting diode (AMOLED) displays have been greatly required. A voltage compensation pixel circuit based on an amorphous indium gallium zinc oxide thin-film transistor is presented for AMOLED displays.
Ning Wei +6 more
doaj +1 more source
Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2007 It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic.
Gorev N. B. +2 more
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Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
IEEE Journal of the Electron Devices Society, 2021 An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform.
A. Razavieh +12 more
doaj +1 more source
Results in Physics, 2018 We report energy band bending of methylammonium lead halide (MAPbI3) perovskite film in contact with indium-tin-oxide (ITO) surface using photoelectron spectroscopy in air (PESA) and ultraviolet photoelectron spectroscopy (UPS) measurements.
Yujin Park, Byoungnam Park
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Multi-Voltage Threshold Digitization Method
CT Lilun yu yingyong yanjiuAnalog-to-digital converters (ADCs) transform the analog signals of time-variant physical quantity into digital signals for storing and processing. As the bridge between natural science and information science, ADCs are indispensable in modern industry ...
Ao QIU, Qingguo XIE
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