Results 51 to 60 of about 1,711,818 (299)

Modeling Statistical Dopant Fluctuations Effect on Threshold Voltage of Scaled JFET Devices

open access: yesIEEE Access, 2016
This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs).
Samar K. Saha
doaj   +1 more source

Gut microbiome and aging—A dynamic interplay of microbes, metabolites, and the immune system

open access: yesFEBS Letters, EarlyView.
Age‐dependent shifts in microbial communities engender shifts in microbial metabolite profiles. These in turn drive shifts in barrier surface permeability of the gut and brain and induce immune activation. When paired with preexisting age‐related chronic inflammation this increases the risk of neuroinflammation and neurodegenerative diseases.
Aaron Mehl, Eran Blacher
wiley   +1 more source

A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

open access: yesAIP Advances, 2016
In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states.
Chi-Le Chen   +6 more
doaj   +1 more source

Threshold Voltage and Space Charge in Organic Transistors

open access: yesPhysical Review Letters, 2009
4 pages, 4 ...
Gutierrez Lezama, Ignacio   +1 more
openaire   +5 more sources

Organizing the interface—Plasma membrane architecture and receptor dynamics in virus‐cell interactions

open access: yesFEBS Letters, EarlyView.
Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley   +1 more source

Design and analysis strategies for robust microbiome ageing research

open access: yesFEBS Letters, EarlyView.
The gut microbiome changes with age and associates with age‐related morbidity and mortality, establishing it as a potential biomarker and intervention target for ageing. Realising this potential requires methodological rigour, yet distinguishing biological signals from methodological artefacts remains challenging across cohorts. This review provides an
Mark Olenik   +5 more
wiley   +1 more source

Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides [PDF]

open access: yesNuclear Technology and Radiation Protection, 2011
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes
Pejović Momčilo M.   +3 more
doaj   +1 more source

Microbiome‐blood–brain barrier interactions in aging — mechanisms and therapeutic potential

open access: yesFEBS Letters, EarlyView.
Aging reshapes the gut microbiome (↓SCFA‐producing commensals; ↑pro‐inflammatory outputs), shifting circulating metabolites (↓SCFAs; ↑LPS, ↑TMAO, ↑PAA) that act at the BBB to increase nonspecific transcytosis, alter transport, and promote astrocyte reactivity, heightening brain vulnerability.
Daniel Cuervo‐Zanatta   +3 more
wiley   +1 more source

Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
The effect of grain size (D) on the threshold voltage (Vth) for double gate polycrystalline silicon MOSFET is investigated theoretically in terms of grain boundary trap states (NT). It is found that the threshold voltage (Vth) increases non-linearly with
Alka Panwar, Mahesh Chandra, B.P. Tyag
doaj  

Radiation-sensitive field effect transistor response to gamma-ray irradiation [PDF]

open access: yesNuclear Technology and Radiation Protection, 2011
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated.
Pejović Milić M.   +2 more
doaj   +1 more source

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