Results 51 to 60 of about 223,006 (306)
Biomolecular condensates formed by fused in sarcoma (FUS) are dissolved by high ATP concentrations yet persist in cells. Using a reconstituted system, we demonstrate that valosin‐containing protein (VCP), an AAA+ ATPase, counteracts ATP‐driven dissolution of FUS condensates through its D2 ATPase activity.
Hitomi Kimura +2 more
wiley +1 more source
Gate-sizing-based single Vdd test for bridge defects in multi-voltage designs
The use of multiple voltage settings for dynamic power management is an effective design technique. Recent research has shown that testing for resistive bridging faults in such designs requires more than one voltage setting for 100% fault coverage ...
Harrod, Peter +11 more
core +1 more source
Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides [PDF]
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes
Pejović Momčilo M. +3 more
doaj +1 more source
Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley +1 more source
Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET [PDF]
The effect of grain size (D) on the threshold voltage (Vth) for double gate polycrystalline silicon MOSFET is investigated theoretically in terms of grain boundary trap states (NT). It is found that the threshold voltage (Vth) increases non-linearly with
Alka Panwar, Mahesh Chandra, B.P. Tyag
doaj
Radiation-sensitive field effect transistor response to gamma-ray irradiation [PDF]
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated.
Pejović Milić M. +2 more
doaj +1 more source
Modulation of Homer1 EVH1 domain internal dynamics by putative autism‐associated mutations
The putative autism‐associated M65I and S97L variants of the EVH1 domain of the postsynaptic scaffold protein Homer1 do not exhibit substantial changes in their overall structure or partner binding. Both of them, but especially the M65I variant, show altered internal dynamics relative to the wild‐type domain on the μs‐ms timescale, indicated by the ...
Fanni Farkas +6 more
wiley +1 more source
Run-time power and performance scaling in 28 nm FPGAs [PDF]
The ability of scaling power and performance at run-time enables the creation of computing systems in which energy is consumed in proportion of the work to be done and the time available to do it.
Nunez-Yanez, Jose L +1 more
core +1 more source
Modeling Statistical Dopant Fluctuations Effect on Threshold Voltage of Scaled JFET Devices
This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs).
Samar K. Saha
doaj +1 more source
Phosphoinositides and inositol phosphates as molecular glues
Inositol phosphates (IPs) and phosphoinositides (PIPs) regulate diverse eukaryotic processes. Beyond recruiting signaling proteins or acting as structural cofactors, recent studies suggest they mediate protein–protein interactions as natural molecular glues.
Aleshia Seaton‐Terry +9 more
wiley +1 more source

