Results 71 to 80 of about 1,711,818 (299)
Model for DMOST threshold voltage
Electronics Letters, 1992 An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures.
Andersson, Mikael +4 more
openaire +2 more sources
Analysis of threshold voltage fluctuations due to short channel and random doping effects
, 2013 A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented.
FRANCISCO JAVIER DE LA HIDALGA WADE
core
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v
In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P +10 more
core +1 more source
FEBS Letters, EarlyView.Vacuolar H+‐ATPase (V‐ATPase) is a multisubunit rotary proton pump that acidifies intracellular compartments. Using elastic network models, we identified conserved hinge residues that govern its large‐scale functional motions. We show that intrinsically encoded ‘soft modes’ drive critical functional transitions, including rotary catalysis and ...
Diksha Parwana +3 more
wiley +1 more source
A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures
IEEE Journal of the Electron Devices SocietyIn this article, we present a comprehensive overview of the negative transconductance observed in native (or zero-threshold) MOSFETs at cryogenic temperatures.
Wajid Manzoor +2 more
doaj +1 more source
AIP Advances, 2014 The switch based on electrowetting technology has the advantages of no moving part, low contact resistance, long life and adjustable acceleration threshold. The acceleration threshold of switch can be fine-tuned by adjusting the applied voltage.
Tingting Liu, Wei Su, Tao Yang, Bin Han
doaj +1 more source
A Nanoscale Low-Power Resistorless Voltage Reference with High PSRR
Nanoscale Research Letters, 2019 In this paper, a nano-watt resistorless subthreshold voltage reference with high-power supply rejection ratio (PSRR) is presented. A self-biased MOS voltage divider is proposed to provide bias current for whole voltage reference, which is a positive ...
Zekun Zhou +5 more
doaj +1 more source
Molecular Oncology, EarlyView.RNA profiling of circulating extracellular vesicles (EVs) from blood samples of men undergoing prostate biopsy identifies transcripts associated with clinically significant prostate cancer. Integrative analysis with public tumor datasets links EV‐derived gene signatures to tumor stage and progression‐free survival, highlighting CASP3, XRCC2, and RIT1 ...
Stefan Werner +14 more
wiley +1 more source
Study on Hot Carriers Effect of Uniaxial Strained Si NMOS
Chemical Engineering Transactions, 2017 The hot carrier effect of strained Si MOS is more significant than that of bulk Si MOS. Based on the study of the mechanism of hot carrier effect in uniaxial strained Si MOS, the factors affecting the hot carrier effect of uniaxial strain Si MOS and the ...
Wang Ying
doaj +1 more source
Molecular Oncology, EarlyView.Dormant cancer cells can hide in distant organs for years, evading treatment and the immune system. This review highlights how signals from the surrounding tissue and immune environment keep these cells inactive or trigger their reawakening. Understanding these mechanisms may help develop therapies to eliminate or control dormant cells and prevent ...
Kanishka Tiwary +1 more
wiley +1 more source