Results 81 to 90 of about 223,886 (306)

Evaluation of the threshold trimming method for micro inertial fluidic switch based on electrowetting technology

open access: yesAIP Advances, 2014
The switch based on electrowetting technology has the advantages of no moving part, low contact resistance, long life and adjustable acceleration threshold. The acceleration threshold of switch can be fine-tuned by adjusting the applied voltage.
Tingting Liu, Wei Su, Tao Yang, Bin Han
doaj   +1 more source

Study on Hot Carriers Effect of Uniaxial Strained Si NMOS

open access: yesChemical Engineering Transactions, 2017
The hot carrier effect of strained Si MOS is more significant than that of bulk Si MOS. Based on the study of the mechanism of hot carrier effect in uniaxial strained Si MOS, the factors affecting the hot carrier effect of uniaxial strain Si MOS and the ...
Wang Ying
doaj   +1 more source

Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

open access: yesNanomaterials, 2020
The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated.
Gwomei Wu, Anup K. Sahoo
doaj   +1 more source

Transferrin receptor 1‐mediated iron uptake supports thermogenic activation in human cervical‐derived adipocytes

open access: yesFEBS Letters, EarlyView.
In this study, we found that human cervical‐derived adipocytes maintain intracellular iron level by regulating the expression of iron transport‐related proteins during adrenergic stimulation. Melanotransferrin is predicted to interact with transferrin receptor 1 based on in silico analysis.
Rahaf Alrifai   +9 more
wiley   +1 more source

Dual-Threshold Voltage Design of Sub-Threshold Circuits [PDF]

open access: yes, 2014
Threshold voltage of MOSFET technology represents the value of the gate-source voltage when the current in a MOS transistor starts to increase significantly since the conduction layer just begins to appear.
Yao, Jia
core  

A Nanoscale Low-Power Resistorless Voltage Reference with High PSRR

open access: yesNanoscale Research Letters, 2019
In this paper, a nano-watt resistorless subthreshold voltage reference with high-power supply rejection ratio (PSRR) is presented. A self-biased MOS voltage divider is proposed to provide bias current for whole voltage reference, which is a positive ...
Zekun Zhou   +5 more
doaj   +1 more source

Gut microbiome and aging—A dynamic interplay of microbes, metabolites, and the immune system

open access: yesFEBS Letters, EarlyView.
Age‐dependent shifts in microbial communities engender shifts in microbial metabolite profiles. These in turn drive shifts in barrier surface permeability of the gut and brain and induce immune activation. When paired with preexisting age‐related chronic inflammation this increases the risk of neuroinflammation and neurodegenerative diseases.
Aaron Mehl, Eran Blacher
wiley   +1 more source

Valosin‐containing protein counteracts ATP‐driven dissolution of FUS condensates through its ATPase activity in vitro

open access: yesFEBS Letters, EarlyView.
Biomolecular condensates formed by fused in sarcoma (FUS) are dissolved by high ATP concentrations yet persist in cells. Using a reconstituted system, we demonstrate that valosin‐containing protein (VCP), an AAA+ ATPase, counteracts ATP‐driven dissolution of FUS condensates through its D2 ATPase activity.
Hitomi Kimura   +2 more
wiley   +1 more source

Osciladores de ultra-baixa-tensão com aplicação em circuitos de captação de energia [PDF]

open access: yes, 2014
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2014Abstract: This thesis describes the analysis and design of oscillators and charge pumps that can operate ...
Machado, Márcio Bender
core  

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

open access: yesMicromachines
The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose (TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) PMOS. After simulating the situation of irradiation after NBT stress,
Hao Wei   +6 more
doaj   +1 more source

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