Results 81 to 90 of about 1,711,818 (299)

Dual-threshold graded desaturation protection for IGBTs in VSC-HVDC converter valve submodules

open access: yesJournal of Engineering and Applied Science
A dual-threshold graded desaturation protection strategy is proposed to address differences in the short-circuit current evolution and protection requirements of insulated-gate bipolar transistors (IGBTs) under different short-circuit conditions in ...
Wenqian Yuan   +8 more
doaj   +1 more source

Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

open access: yesNanomaterials, 2020
The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated.
Gwomei Wu, Anup K. Sahoo
doaj   +1 more source

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

open access: yes, 2011
Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology.
Dong, Z (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect Inst Semicond, Beijing 100083, Peoples R China. dongzan@semi.ac.cn   +6 more
core  

Developmental programmes drive cellular plasticity, disease progression and therapy resistance in lung adenocarcinoma

open access: yesMolecular Oncology, EarlyView.
This study shows that lung adenocarcinomas exploit developmental branching morphogenesis to acquire a therapy resistant basal‐like tumour cell state. This process was found to be regulated by combined TP53 loss‐of‐function and type‐I interferon signalling, identifying a novel axis for biomarker and therapeutic target discovery.
Kamila J Bienkowska   +13 more
wiley   +1 more source

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

open access: yesMicromachines
The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose (TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) PMOS. After simulating the situation of irradiation after NBT stress,
Hao Wei   +6 more
doaj   +1 more source

Extraction of Mobility and Threshold Voltage from Noisy Current-Voltage Data

open access: yes, 2023
A simple, four-parameter formula is proposed and used to smooth noisy transistors  curves for the purpose of stable extraction of transistor field-effect mobility and threshold voltage.
Khaled Ahmed (14320710)
core   +1 more source

Finding novel vulnerabilities of hypomorphic BRCA1 alleles

open access: yesMolecular Oncology, EarlyView.
Synthetic lethality screens performed to identify novel vulnerabilities often model complete gene loss, thereby overlooking patient‐derived hypomorphic mutations. In this study, we have performed genome‐wide CRISPR screens on BRCA1 hypomorphic mutations, showing BRCA1I26A behaves like wild‐type, while BRCA1R1699Q mimics deficiency. Furthermore, we have
Anne Schreuder   +10 more
wiley   +1 more source

A novel quinazolinone insulin receptor inhibitor and its synergy with an EGFR inhibitor in glucose‐driven glioblastoma

open access: yesMolecular Oncology, EarlyView.
The novel styrylquinazolinone‐based molecule W1B effectively suppresses glioblastoma by inhibiting IGF1R and EGFR. In high‐glucose microenvironments driving tumor resistance, W1B acts synergistically with the EGFR inhibitor dacomitinib. This combination safely blocks compensatory survival signaling in zebrafish xenograft models. Showcasing promising in
Patryk Rurka   +9 more
wiley   +1 more source

A RF Energy Supply Method for End Nodes in Smart Buildings

open access: yesIEEE Access, 2019
The application of Internet of Things in smart buildings is becoming more and more extensive. The energy supply problem of end nodes has always been a concern of the field of research and industry areas, and an adaptive radio frequency energy conversion ...
Li Ma   +4 more
doaj   +1 more source

Symmetrical triple-threshold-voltage nine-transistor SRAM circuit with superior noise immunity and overall electrical quality

open access: yes, 2011
Data stability is a major concern in today's high performance memory circuits with deeply scaled transistors and power supply voltages. Multi-threshold-voltage (multi-Vt) nine-transistor (9T) Static Random Access Memory (SRAM) cells with enhanced data ...
Zhu, Hong   +3 more
core   +1 more source

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